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IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1
Mfr. #:
IPB029N06N3GE8187ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 120A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB029N06N3GE8187ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
2.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
53 nC
Pd - Verlustleistung:
188 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
IPB029N06
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
E8187 G IPB029N06N3 IPB29N6N3GE8187XT SP000939334
Gewichtseinheit:
0.068654 oz
Tags
IPB029N06N3, IPB029, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***el Electronic
MOSFET N-CH 60V 120A TO263-3
***ineon SCT
60V, N-Ch, 2.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***p One Stop Global
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) TO-263 T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ineon SCT
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***emi
N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
***ow.cn
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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N-Channel 60 V 2.1 mOhm 375 W SMT TrenchFET Power Mosfet - TO-263
***ark
Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes
*** Americas
N-CHANNEL 60-V (D-S) MOSFET
***ical
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Teil # Mfg. Beschreibung Aktie Preis
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.0671
IPB029N06N3GE8187ATMA1
DISTI # IPB029N06N3GE8187ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB029N06N3GE8187ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.9629
  • 2000:$0.9289
  • 4000:$0.8949
  • 6000:$0.8649
  • 10000:$0.8499
IPB029N06N3GE8187ATMA1
DISTI # 726-IPB029N06N3GE818		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		0
  • 1:$1.9700
  • 10:$1.6800
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9700
IPB029N06N3GE8187ATMA1
DISTI # 8269200P		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS3 TO263, RL310
  • 50:£1.0490
  • 100:£0.9560
Bild Teil # Beschreibung
IPB029N06N3GATMA1

Mfr.#: IPB029N06N3GATMA1

OMO.#: OMO-IPB029N06N3GATMA1

 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPB029N06N3GE8187ATMA1

Mfr.#: IPB029N06N3GE8187ATMA1

OMO.#: OMO-IPB029N06N3GE8187ATMA1

 MOSFET N-Ch 60V 120A D2PAK-2
IPB029N06N3GATMA1

Mfr.#: IPB029N06N3GATMA1

OMO.#: OMO-IPB029N06N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
IPB029N06N3 G

Mfr.#: IPB029N06N3 G

OMO.#: OMO-IPB029N06N3-G-1190

 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3
IPB029N06N3G

Mfr.#: IPB029N06N3G

OMO.#: OMO-IPB029N06N3G-1190

 Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453052)
IPB029N06N3GE8187ATMA1

Mfr.#: IPB029N06N3GE8187ATMA1

OMO.#: OMO-IPB029N06N3GE8187ATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 120A TO263-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von IPB029N06N3GE8187ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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