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CSD16414Q5

CSD16414Q5
Mfr. #:
CSD16414Q5
Beschreibung:
MOSFET N-Ch NexFET Power MOSFETs
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
CSD16414Q5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
CSD16414Q5 Mehr Informationen CSD16414Q5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Texas Instruments
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
VSON-Clip-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
2.1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.6 V
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
16.6 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.2 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
NexFET
Verpackung:
Spule
Höhe:
1 mm
Länge:
6 mm
Serie:
CSD16414Q5
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Texas Instruments
Vorwärtstranskonduktanz - Min:
138 S
Abfallzeit:
11.1 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18.4 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.003527 oz
Tags
CSD16414, CSD1641, CSD164, CSD16, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
25V, N ch NexFET MOSFET™, single SON5x6, 2.6mOhm 8-VSON-CLIP -55 to 150
***th Star Micro
the nexfet power mosfet has been designed to minimize losses in power conversion applications.
***ical
Trans MOSFET N-CH 25V 34A 8-Pin VSON-CLIP EP T/R
***ark
N CHANNEL MOSFET, 25V, 100A, SON-8, FULL REEL
***ment14 APAC
FET, N CH, SINGLE, 25V, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:3.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:100A; Package / Case:SON; Power Dissipation Pd:3.2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:10V
***AS INSTUMENTS
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Teil # Beschreibung Aktie Preis
CSD16414Q5
DISTI # 296-24257-1-ND		MOSFET N-CH 25V 100A 8-SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8970In Stock
  • 1000:$0.9618
  • 500:$1.1608
  • 100:$1.4925
  • 10:$1.8570
  • 1:$2.0600
CSD16414Q5
DISTI # 296-24257-6-ND		MOSFET N-CH 25V 100A 8-SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8970In Stock
  • 1000:$0.9618
  • 500:$1.1608
  • 100:$1.4925
  • 10:$1.8570
  • 1:$2.0600
CSD16414Q5
DISTI # 296-24257-2-ND		MOSFET N-CH 25V 100A 8-SON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		5000In Stock
  • 2500:$0.9016
CSD16414Q5
DISTI # CSD16414Q5		Trans MOSFET N-CH 25V 34A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16414Q5)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.9339
  • 5000:$0.8889
  • 10000:$0.8589
  • 15000:$0.8299
  • 25000:$0.8079
CSD16414Q5N-Channel NexFET&#153,Power MOSFET7420
  • 1000:$0.7300
  • 750:$0.8000
  • 500:$0.9700
  • 250:$1.1600
  • 100:$1.2600
  • 25:$1.4400
  • 10:$1.5500
  • 1:$1.7300
CSD16414Q5Power Field-Effect Transistor, 34A I(D), 25V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		158
  • 1000:$0.8400
  • 500:$0.8900
  • 100:$0.9200
  • 25:$0.9600
  • 1:$1.0400
CSD16414Q5
DISTI # 595-CSD16414Q5		MOSFET N-Ch NexFET Power MOSFETs
RoHS: Compliant		6729
  • 1:$1.9000
  • 10:$1.6100
  • 100:$1.2900
  • 500:$1.1300
  • 1000:$0.9340
  • 2500:$0.8700
  • 5000:$0.8380
CSD16414Q5
DISTI # 8274795P		MOSFET N-CHANNEL 25V 34A NEXFET SON8EP, RL2310
  • 50:£0.6580
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von CSD16414Q5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,90 $
1,90 $
10
1,61 $
16,10 $
100
1,28 $
128,00 $
500
1,12 $
560,00 $
1000
0,93 $
934,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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