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SISC06DN-T1-GE3

SISC06DN-T1-GE3
Mfr. #:
SISC06DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISC06DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISC06DN-T1-GE3 DatasheetSISC06DN-T1-GE3 Datasheet (P4-P6)SISC06DN-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SISC06DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
4.5 V
Qg - Gate-Ladung:
38.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
46.3 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SISC0, SISC, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Teil # Mfg. Beschreibung Aktie Preis
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		6000In Stock
  • 6000:$0.3780
  • 3000:$0.3969
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6000In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SISC06DN-T1-GE3
DISTI # SISC06DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6000In Stock
  • 1000:$0.4380
  • 500:$0.5548
  • 100:$0.6716
  • 10:$0.8610
  • 1:$0.9600
SISC06DN-T1-GE3
DISTI # 59AC7448		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET0
  • 10000:$0.3430
  • 6000:$0.3510
  • 4000:$0.3650
  • 2000:$0.4050
  • 1000:$0.4460
  • 1:$0.4650
SISC06DN-T1-GE3
DISTI # 81AC2793		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,Power RoHS Compliant: Yes6050
  • 500:$0.5190
  • 250:$0.5610
  • 100:$0.6030
  • 50:$0.6640
  • 25:$0.7250
  • 10:$0.7860
  • 1:$0.9490
SISC06DN-T1-GE3
DISTI # 78-SISC06DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		5990
  • 1:$0.9400
  • 10:$0.7780
  • 100:$0.5970
  • 500:$0.5140
  • 1000:$0.4050
  • 3000:$0.3780
  • 6000:$0.3600
  • 9000:$0.3460
SISC06DN-T1-GE3
DISTI # 1783694		Vishay IntertechnologiesN-CHANEL 40 V (D-S) MOSFET POWERPAK 1212, RL5950
  • 3000:£0.2800
SISC06DN-T1-GE3
DISTI # 2932957		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W6050
  • 500:£0.3760
  • 250:£0.4060
  • 100:£0.4360
  • 25:£0.5700
  • 5:£0.6370
SISC06DN-T1-GE3
DISTI # 2932957		Vishay IntertechnologiesMOSFET, N-CH, 30V, 40A, 150DEG C, 46.3W
RoHS: Compliant		6050
  • 1000:$0.6150
  • 500:$0.6490
  • 250:$0.7650
  • 100:$0.9270
  • 10:$1.1900
  • 1:$1.4400
Bild Teil # Beschreibung
OQ1632500000G

Mfr.#: OQ1632500000G

OMO.#: OMO-OQ1632500000G

 Pluggable Terminal Blocks 381 TB SKT VERTICAL
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SISC06DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,94 $
0,94 $
10
0,78 $
7,78 $
100
0,60 $
59,70 $
500
0,51 $
257,00 $
1000
0,40 $
405,00 $
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