FQB5N90TM

FQB5N90TM
Mfr. #:
FQB5N90TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 900V N-Channel QFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQB5N90TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
900 V
Id - Kontinuierlicher Drainstrom:
5.4 A
Rds On - Drain-Source-Widerstand:
2.3 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.13 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FQB5N90
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5.6 S
Abfallzeit:
50 ns
Produktart:
MOSFET
Anstiegszeit:
65 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
28 ns
Teil # Aliase:
FQB5N90TM_NL
Gewichtseinheit:
0.046296 oz
Tags
FQB5N90T, FQB5N9, FQB5N, FQB5, FQB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK
***et Europe
Trans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 900V, 5.4A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:158W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQB5N90TM
DISTI # V72:2272_06301120
ON SemiconductorN-CH/900V/5.4A/2.3OHM427
  • 250:$1.2976
  • 100:$1.4418
  • 25:$1.6156
  • 10:$1.7951
  • 1:$2.3182
FQB5N90TM
DISTI # V36:1790_06301120
ON SemiconductorN-CH/900V/5.4A/2.3OHM0
  • 800000:$0.8074
  • 400000:$0.8076
  • 80000:$0.8219
  • 8000:$0.8452
  • 800:$0.8490
FQB5N90TM
DISTI # FQB5N90TMCT-ND
ON SemiconductorMOSFET N-CH 900V 5.4A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5288In Stock
  • 100:$1.6618
  • 10:$2.0680
  • 1:$2.3000
FQB5N90TM
DISTI # FQB5N90TMDKR-ND
ON SemiconductorMOSFET N-CH 900V 5.4A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5288In Stock
  • 100:$1.6618
  • 10:$2.0680
  • 1:$2.3000
FQB5N90TM
DISTI # FQB5N90TMTR-ND
ON SemiconductorMOSFET N-CH 900V 5.4A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
4800In Stock
  • 5600:$0.9847
  • 2400:$1.0226
  • 1600:$1.0983
  • 800:$1.3256
FQB5N90TM
DISTI # 31975356
ON SemiconductorN-CH/900V/5.4A/2.3OHM4000
  • 800:$0.6782
FQB5N90TM
DISTI # 31980059
ON SemiconductorN-CH/900V/5.4A/2.3OHM4000
  • 800:$0.8363
FQB5N90TM
DISTI # 26694462
ON SemiconductorN-CH/900V/5.4A/2.3OHM427
  • 8:$2.3182
FQB5N90TM
DISTI # FQB5N90TM
ON SemiconductorTrans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB5N90TM)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 8000:$0.5829
  • 4800:$0.5979
  • 3200:$0.6049
  • 1600:$0.6129
  • 800:$0.6169
FQB5N90TM
DISTI # FQB5N90TM
ON SemiconductorTrans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FQB5N90TM)
RoHS: Compliant
Min Qty: 281
Container: Bulk
Americas - 0
    FQB5N90TM
    DISTI # FQB5N90TM
    ON SemiconductorTrans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB5N90TM)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Asia - 0
    • 40000:$1.0284
    • 20000:$1.0455
    • 8000:$1.0816
    • 4000:$1.1202
    • 2400:$1.1617
    • 1600:$1.2064
    • 800:$1.2546
    FQB5N90TM
    DISTI # FQB5N90TM
    ON SemiconductorTrans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB5N90TM)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 8000:€0.7269
    • 4800:€0.7789
    • 3200:€0.8389
    • 1600:€0.9089
    • 800:€1.0909
    FQB5N90TM
    DISTI # 84W8878
    ON SemiconductorTrans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 84W8878)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 500:$1.3500
    • 250:$1.4400
    • 100:$1.5300
    • 50:$1.6500
    • 25:$1.7700
    • 10:$1.8900
    • 1:$2.2100
    FQB5N90TM
    DISTI # 82C3970
    ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,5.4A I(D),TO-263AB ROHS COMPLIANT: YES0
    • 9600:$0.9790
    • 2400:$1.0100
    • 800:$1.1100
    • 1:$1.1200
    FQB5N90TM
    DISTI # 84W8878
    ON SemiconductorMOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5.4A,Drain Source Voltage Vds:900V,On Resistance Rds(on):1.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes339
    • 1:$0.8490
    • 10:$0.8490
    • 25:$0.8490
    • 50:$0.8490
    • 100:$0.8490
    • 250:$0.8490
    • 500:$0.8490
    FQB5N90TM.
    DISTI # 96AC0078
    ON SemiconductorQF 900V 2.3OHM D2PAK ROHS COMPLIANT: YES0
    • 9600:$0.9790
    • 2400:$1.0100
    • 800:$1.1100
    • 1:$1.1200
    FQB5N90TM
    DISTI # 512-FQB5N90TM
    ON SemiconductorMOSFET 900V N-Channel QFET
    RoHS: Compliant
    3213
    • 1:$2.1300
    • 10:$1.8100
    • 100:$1.4500
    • 500:$1.2700
    • 800:$1.0500
    FQB5N90TM
    DISTI # FQB5N90TM
    ON SemiconductorTransistor: N-MOSFET,unipolar,900V,3.42A,158W,D2PAK797
    • 500:$0.8700
    • 100:$0.9300
    • 25:$1.0400
    • 5:$1.2800
    • 1:$1.5000
    FQB5N90TMFairchild Semiconductor Corporation 
    RoHS: Compliant
    3146
      FQB5N90TM
      DISTI # 2322623
      ON SemiconductorMOSFET, N CH, 900V, 5.4A, TO-263-3
      RoHS: Compliant
      149
      • 800:$1.6200
      • 500:$1.9500
      • 100:$2.2400
      • 10:$2.7900
      • 1:$3.2800
      FQB5N90TM
      DISTI # 2322623
      ON SemiconductorMOSFET, N CH, 900V, 5.4A, TO-263-3
      RoHS: Compliant
      148
      • 500:£0.8010
      • 250:£0.9560
      • 100:£1.1100
      • 10:£1.4000
      • 1:£1.8500
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1986
      Menge eingeben:
      Der aktuelle Preis von FQB5N90TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,13 $
      2,13 $
      10
      1,81 $
      18,10 $
      100
      1,45 $
      145,00 $
      500
      1,27 $
      635,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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