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SIR892DP-T1-GE3

SIR892DP-T1-GE3
Mfr. #:
SIR892DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIR892DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIR892DP-T1-GE3 DatasheetSIR892DP-T1-GE3 Datasheet (P4-P6)SIR892DP-T1-GE3 Datasheet (P7-P9)SIR892DP-T1-GE3 Datasheet (P10-P12)SIR892DP-T1-GE3 Datasheet (P13)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
HERR
Breite:
5.15 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SIR892DP-GE3
Gewichtseinheit:
0.017870 oz
Tags
SIR892DP-T, SIR892D, SIR892, SIR89, SIR8, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 25 V 0.0032 Ohms Surface Mount Power Mosfet - SOIC-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:50000mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0042ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.6V; Power Dissipation, Pd:5W ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 25V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Teil # Mfg. Beschreibung Aktie Preis
SIR892DP-T1-GE3
DISTI # V72:2272_09216062		Vishay IntertechnologiesTrans MOSFET N-CH 25V 30A 8-Pin PowerPAK SO T/R
RoHS: Compliant		2892
  • 1000:$1.4386
  • 500:$1.5428
  • 250:$1.5792
  • 100:$1.7233
  • 25:$1.9558
  • 10:$1.9794
  • 1:$2.2918
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		22In Stock
  • 10:$2.8870
  • 1:$3.2000
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 3000:$1.3514
SIR892DP-T1-GE3
DISTI # SIR892DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    SIR892DP-T1-GE3
    DISTI # 25789952    		Vishay IntertechnologiesTrans MOSFET N-CH 25V 30A 8-Pin PowerPAK SO T/R
    RoHS: Compliant    		2892
    • 1000:$1.4386
    • 500:$1.5428
    • 250:$1.5792
    • 100:$1.7233
    • 25:$1.9558
    • 10:$1.9794
    • 6:$2.2918
    SIR892DP-T1-GE3
    DISTI # 85W8935    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes90
    • 1:$3.4000
    • 25:$2.8200
    • 50:$2.5100
    • 100:$2.1800
    • 250:$2.0500
    • 500:$1.9200
    • 1000:$1.8200
    SIR892DP-T1-GE3
    DISTI # 16P3665    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.6V RoHS Compliant: Yes0
    • 1:$1.5200
    • 3000:$1.5200
    SIR892DP-T1-GE3
    DISTI # 781-SIR892DP-T1-GE3    		Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		49
    • 1:$2.8300
    • 10:$2.3500
    • 100:$1.8200
    • 500:$1.6000
    • 1000:$1.5200
    SIR892DP-T1-GE3
    DISTI # 2478939    		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL R
    RoHS: Compliant    		0
    • 3000:£1.3500
    SIR892DP-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
      SIR892DP-T1-GE3
      DISTI # C1S803601788276      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2892
      • 250:$1.5792
      • 100:$1.7233
      • 25:$1.9558
      • 10:$1.9794
      • 1:$2.2918
      SIR892DP-T1-GE3
      DISTI # 2478939      		Vishay IntertechnologiesN CHANNEL MOSFET, 25V, 50A, SOIC, FULL REEL
      RoHS: Compliant      		0
      • 3000:$2.1600
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von SIR892DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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