OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI1958DH-T1-E3

SI1958DH-T1-E3
Mfr. #:
SI1958DH-T1-E3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET RECOMMENDED ALT 78-SI1902CDL-T1-GE3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI1958DH-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI1958DH-T1-E3 DatasheetSI1958DH-T1-E3 Datasheet (P4-P6)SI1958DH-T1-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1 mm
Länge:
2.1 mm
Serie:
SI1
Breite:
1.25 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI1958DH-E3
Gewichtseinheit:
0.000265 oz
Tags
SI195, SI19, SI1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:1300mA; On Resistance, Rds(on):0.340ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL, N, SC-70; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.165ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.6V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Base Number:1958; Continuous Drain Current Id, N Channel:1.3A; Current Id Max:1.3A; Drain Source Voltage Vds, N Channel:20V; Module Configuration:Dual; N-channel Gate Charge:1.2nC; On Resistance Rds(on), N Channel:0.165ohm; On State Resistance @ Vgs = 2.5V:340mohm; On State Resistance @ Vgs = 4.5V:205mohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:4A; Termination Type:Surface Mount Device; Voltage Vds Typ:20V; Voltage Vgs Max:1.6V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.6V; Voltage Vgs th Min:0.6V
Teil # Mfg. Beschreibung Aktie Preis
SI1958DH-T1-E3
DISTI # SI1958DH-T1-E3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1958DH-T1-E3
    DISTI # SI1958DH-T1-E3CT-ND    		Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SI1958DH-T1-E3
      DISTI # SI1958DH-T1-E3DKR-ND      		Vishay SiliconixMOSFET 2N-CH 20V 1.3A SC70-6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SI1958DH-T1-E3
        DISTI # 70026192        		Vishay SiliconixDUAL N-CHANNEL 20-V (D-S) MOSFET
        RoHS: Compliant        		0
        • 3000:$0.2400
        • 6000:$0.2200
        • 9000:$0.2000
        SI1958DH-T1-E3
        DISTI # 1497604        		Vishay IntertechnologiesMOSFET, DUAL, N, SC-70
        RoHS: Compliant        		0
        • 1000:$0.4500
        • 500:$0.4660
        • 250:$0.5020
        • 100:$0.5800
        • 25:$0.6690
        • 10:$0.8420
        • 1:$1.0400
        Bild Teil # Beschreibung
        SI1958DH-T1-E3

        Mfr.#: SI1958DH-T1-E3

        OMO.#: OMO-SI1958DH-T1-E3

        		 MOSFET RECOMMENDED ALT 78-SI1902CDL-T1-GE3
        SI1958DH-T1-E3

        Mfr.#: SI1958DH-T1-E3

        OMO.#: OMO-SI1958DH-T1-E3-VISHAY

        		 MOSFET 2N-CH 20V 1.3A SC70-6
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von SI1958DH-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Beginnen mit
        Neueste Produkte
        More Newest Products
        Top