BSC190N15NS3GATMA1

Mfr. #:: BSC190N15NS3GATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC190N15NS3GATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 150 V

Id - Kontinuierlicher Drainstrom:: 50 A

Rds On - Drain-Source-Widerstand:: 19 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 23 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 125 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.27 mm

Länge:: 5.9 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 5.15 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 29 S

Abfallzeit:: 6 ns

Produktart:: MOSFET

Anstiegszeit:: 53 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 25 ns

Typische Einschaltverzögerungszeit:: 15 ns

Teil # Aliase:: BSC190N15NS3 BSC19N15NS3GXT G SP000416636

Gewichtseinheit:: 0.003527 oz

Tags: BSC190N15NS3G, BSC190N15NS3, BSC190N15, BSC190N1, BSC190, BSC19, BSC1, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC190N15NS3GATMA1 Beschreibung

***ark: MOSFET Transistor, N Channel, 50 A, 150 V, 0.016 ohm, 10 V, 3 V

***ure Electronics: Single N-Channel 150 V 19 mOhm 23 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Source Voltage Vds:150V; On Resistance

***ineon SCT: The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor, PG-TDSON-8, RoHS

***nell: MOSFET, N CH, 150V, 50A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 150V OptiMOS achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS part. | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V8 0V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***(Formerly Allied Electronics): Fairchild FDMS86200 N-channel MOSFET Transistor; 52 A; 150 V; 8-Pin Power 56

***emi: N-Channel Power Trench® MOSFET 150V, 35A, 18mΩ

***ure Electronics: N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56

***r Electronics: Power Field-Effect Transistor, 9.6A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***ment14 APAC: MOSFET, N CH, 150V, 35A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

***ure Electronics: Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ineon SCT: 150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

***(Formerly Allied Electronics): MOSFET; N-Channel; 150V; 56A; 31 mOhm; 33 nC Qg; PQFN

*** Source Electronics: Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R / MOSFET N-CH 150V 10A 8VQFN

***ineon: Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:150V; On Resistance Rds(on):31mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes

***ure Electronics: N-Channel 150 V 18 mOhm 104 W TrenchFET Power MosFet - PowerPAK SO-8

***et: Trans MOSFET N-CH 150V 12.8A 8-Pin PowerPAK SO T/R

***el Electronic: MOSFET 150volt 18mOhms@10V 53.7A N-Ch T-FET

***nell: MOSFET, N-CH, 150V, 53.7A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 53.7A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0148ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 104W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***roFlash: Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ponent Sense: MOSFET FDMS86200 N 0.019R 150V 35A

***ernational Rectifier: 150V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN

***ment14 APAC: MOSFET, N CH, 150V, 56A, PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:150V; On Resistance Rds(on):25.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:56A; Power Dissipation Pd:250W; Voltage Vgs Max:20V

***ure Electronics: Single N-Channel 150 V 34.5 mOhm 39 nC HEXFET® Power Mosfet - DirectFET®

***ernational Rectifier: A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ineon: Target Applications: Battery Operated Drive; Class D Audio; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side

***ark: N CHANNEL MOSFET, 150V, 6.2mA; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.2mA; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.0029ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***emi: N-Channel PowerTrench® MOSFET 150V, 37A, 36mΩ

***ure Electronics: N-Channel 150 V 36 mOhm Surface Mount PowerTrench® Mosfet - TO-263AB

***Yang: Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***sible Micro: XTR,PWR,MFT,FDB2552,D2PK 150V,37A,N-CHNL MOSFET RDS(on)=36 mOHM,TO-263AB

***r Electronics: Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N, SMD, TO-263AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:16A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-263AB; Termination Type:SMD

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC190N15NS3GATMA1 DISTI # V72:2272_06382989	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	1678	75000:$1.1810 30000:$1.2030 15000:$1.2240 6000:$1.2460 3000:$1.2669 1000:$1.2890 500:$1.3170 250:$1.3490 100:$1.4990 50:$1.6350 25:$1.8170 10:$1.8380 1:$2.1629
BSC190N15NS3GATMA1 DISTI # BSC190N15NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.3355
BSC190N15NS3GATMA1 DISTI # BSC190N15NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.5343 500:$1.8517 100:$2.3808 10:$2.9630 1:$3.2800
BSC190N15NS3GATMA1 DISTI # BSC190N15NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 50A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.5343 500:$1.8517 100:$2.3808 10:$2.9630 1:$3.2800
BSC190N15NS3GATMA1 DISTI # 30667064	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	1678	5:$2.1629
BSC190N15NS3GATMA1 DISTI # BSC190N15NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A 8-Pin TDSON EP - Tape and Reel (Alt: BSC190N15NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.2900 10000:$1.1900 20000:$1.1900 30000:$1.1900 50000:$1.0900
BSC190N15NS3GATMA1 DISTI # 79X1336	Infineon Technologies AG	MOSFET, N-CH, 150V, 50A, PG-TDSON- 8,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$2.7500 10:$2.3400 25:$2.1800 50:$2.0300 100:$1.8700 250:$1.7600 500:$1.6400 1000:$1.3600
BSC190N15NS3 G DISTI # 726-BSC190N15NS3G	Infineon Technologies AG	MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.7500 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600
BSC190N15NS3GATMA1 DISTI # 726-BSC190N15NS3GATM	Infineon Technologies AG	MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 RoHS: Compliant	0	1:$2.7500 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600
BSC190N15NS3GATMA1 DISTI # 7545317P	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A TDSON8, RL	2500	50:£1.3700 250:£1.1500 1250:£0.9250 2500:£0.9000
BSC190N15NS3GATMA1 DISTI # 7545317	Infineon Technologies AG	MOSFET N-CHANNEL 150V 50A TDSON8, PK	94	2:£1.9600 50:£1.3700 250:£1.1500 1250:£0.9250 2500:£0.9000
BSC190N15NS3GATMA1 DISTI # 2432711	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TDSON-8 RoHS: Compliant	0	1:£2.0000 10:£1.4000 100:£1.2900 250:£1.1700 500:£1.0400
BSC190N15NS3GATMA1 DISTI # 2432711RL	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TDSON-8 RoHS: Compliant	0	1:$4.3500 10:$3.7100 100:$2.9700 500:$2.6000 1000:$2.1600 2500:$2.0100 5000:$1.9400
BSC190N15NS3GATMA1 DISTI # 2432711	Infineon Technologies AG	MOSFET, N CH, 150V, 50A, TDSON-8 RoHS: Compliant	0	1:$4.3500 10:$3.7100 100:$2.9700 500:$2.6000 1000:$2.1600 2500:$2.0100 5000:$1.9400
BSC190N15NS3GATMA1 DISTI # C1S322000210970	Infineon Technologies AG	Trans MOSFET N-CH 150V 50A Automotive 8-Pin TDSON EP T/R RoHS: Compliant	1678	100:$1.4990 50:$1.6350 25:$1.8170 10:$1.8380 1:$2.1629

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1992
Menge eingeben:

Der aktuelle Preis von BSC190N15NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,74 $~~; ~~2,74 $~~

10: ~~2,33 $~~; ~~23,30 $~~

100: ~~1,86 $~~; ~~186,00 $~~

500: ~~1,63 $~~; ~~815,00 $~~

1000: ~~1,35 $~~; ~~1 350,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC190N15NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes