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IPB025N08N3GATMA1

IPB025N08N3GATMA1
Mfr. #:
IPB025N08N3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB025N08N3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Unterkategorie:
MOSFETs
Teil # Aliase:
G IPB025N08N3 IPB25N8N3GXT SP000311980
Gewichtseinheit:
0.139332 oz
Tags
IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
IPB025N08N3GATMA1
DISTI # V72:2272_06377516		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		491
  • 250:$3.3110
  • 100:$3.6790
  • 25:$4.3870
  • 10:$4.6520
  • 1:$5.9147
IPB025N08N3GATMA1
DISTI # V36:1790_06377516		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$2.2040
  • 500000:$2.2060
  • 100000:$2.3980
  • 10000:$2.7270
  • 1000:$2.7810
IPB025N08N3GATMA1
DISTI # IPB025N08N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7579In Stock
  • 500:$3.3963
  • 100:$3.9897
  • 10:$4.8690
  • 1:$5.4200
IPB025N08N3GATMA1
DISTI # IPB025N08N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7579In Stock
  • 500:$3.3963
  • 100:$3.9897
  • 10:$4.8690
  • 1:$5.4200
IPB025N08N3GATMA1
DISTI # IPB025N08N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		5000In Stock
  • 2000:$2.6419
  • 1000:$2.7809
IPB025N08N3GATMA1
DISTI # 31005994		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$2.3219
IPB025N08N3GATMA1
DISTI # 32864934		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		760
  • 5:$2.3219
IPB025N08N3GATMA1
DISTI # 30331029		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		491
  • 3:$5.9147
IPB025N08N3GATMA1
DISTI # SP000311980		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€1.9900
  • 6000:€2.1900
  • 4000:€2.2900
  • 2000:€2.3900
  • 1000:€2.4900
IPB025N08N3GXT
DISTI # IPB025N08N3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$2.3900
  • 10000:$2.3900
  • 4000:$2.4900
  • 2000:$2.5900
  • 1000:$2.6900
IPB025N08N3GATMA1
DISTI # 60R2648		Infineon Technologies AGMOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 500:$3.1700
  • 250:$3.5400
  • 100:$3.7300
  • 50:$3.9200
  • 25:$4.1000
  • 10:$4.2900
  • 1:$5.0500
IPB025N08N3 G
DISTI # 726-IPB025N08N3G		Infineon Technologies AGMOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
RoHS: Compliant		1000
  • 1:$5.0000
  • 10:$4.2500
  • 100:$3.6900
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6400
  • 2000:$2.5100
IPB025N08N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RoHS: Compliant		20
  • 1000:$2.2400
  • 500:$2.3600
  • 100:$2.4500
  • 25:$2.5600
  • 1:$2.7500
IPB025N08N3GATMA1
DISTI # 8986898P		Infineon Technologies AGMOSFET N-CHANNEL 80V 120A TO263-3, RL198
  • 10:£1.9800
IPB025N08N3GATMA1
DISTI # 1775525		Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-31398
  • 500:£2.4100
  • 250:£2.7000
  • 100:£2.8400
  • 10:£3.2700
  • 1:£4.2900
IPB025N08N3GATMA1
DISTI # 1775525		Infineon Technologies AGMOSFET, N CH, 120A, 80V, PG-TO263-3
RoHS: Compliant		298
  • 1000:$3.9800
  • 500:$4.7300
  • 250:$5.2700
  • 100:$5.5600
  • 10:$6.4000
  • 1:$7.5400
Bild Teil # Beschreibung
IPB025N08N3 G

Mfr.#: IPB025N08N3 G

OMO.#: OMO-IPB025N08N3-G

 MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3
IPB025N08N3GATMA1

Mfr.#: IPB025N08N3GATMA1

OMO.#: OMO-IPB025N08N3GATMA1

 MOSFET MV POWER MOS
IPB025N08N3

Mfr.#: IPB025N08N3

OMO.#: OMO-IPB025N08N3-1190

 Neu und Original
IPB025N08N3 G

Mfr.#: IPB025N08N3 G

OMO.#: OMO-IPB025N08N3-G-1190

 Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G)
IPB025N08N3G

Mfr.#: IPB025N08N3G

OMO.#: OMO-IPB025N08N3G-1190

 Neu und Original
IPB025N08N3GATMA1

Mfr.#: IPB025N08N3GATMA1

OMO.#: OMO-IPB025N08N3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 80V 120A TO263-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IPB025N08N3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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