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SI2356DS-T1-GE3

SI2356DS-T1-GE3
Mfr. #:
SI2356DS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 4.3A SOT-23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2356DS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI2356DS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
VISHAY
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.050717 oz
Montageart
SMD/SMT
Handelsname
TrenchFET
Paket-Koffer
TO-236-3, SC-59, SOT-23-3
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
TO-236
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
1.7W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
40V
Eingangskapazität-Ciss-Vds
370pF @ 20V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
4.3A (Tc)
Rds-On-Max-Id-Vgs
51 mOhm @ 3.2A, 10V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Lade-Qg-Vgs
13nC @ 10V
Pd-Verlustleistung
1.7 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
53 ns
Anstiegszeit
52 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
4.3 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
1.5 V
Rds-On-Drain-Source-Widerstand
56 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
18 ns
Typische-Einschaltverzögerungszeit
10 ns
Qg-Gate-Ladung
8.1 nC
Vorwärts-Transkonduktanz-Min
13 S
Tags
SI235, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R
***ark
N-Ch MOSFET SOT-23 copper 40V 51mohm @ 10V
***et
N-CH MOSFET SOT-23 COPPER 40V 51MOHM @ 10V
***i-Key
MOSFET N-CH 40V 4.3A SOT-23
***ronik
N-CHANNEL-FET 4,3A 40V SOT23
***ied Electronics & Automation
40V .051ohm@10V 4.3A N-Ch T-FET
***
P-CHANNEL 40-V (D-S)
***ment14 APAC
MOSFET, N-CH, 40V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, N-CH, 40V, 4.3A, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4.3A; Napięcie drenu / źródła Vds:40V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.5V; Straty mocy Pd:1.7W; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (20-Jun-2016)
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Teil # Mfg. Beschreibung Aktie Preis
SI2356DS-T1-GE3
DISTI # V72:2272_09216727		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2757
  • 1000:$0.1356
  • 500:$0.1789
  • 250:$0.2021
  • 100:$0.2246
  • 25:$0.3306
  • 10:$0.3674
  • 1:$0.5266
SI2356DS-T1-GE3
DISTI # V36:1790_09216727		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
RoHS: Compliant		0
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		87569In Stock
    • 1000:$0.1289
    • 500:$0.1718
    • 100:$0.2291
    • 10:$0.3370
    • 1:$0.4200
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		87569In Stock
    • 1000:$0.1289
    • 500:$0.1718
    • 100:$0.2291
    • 10:$0.3370
    • 1:$0.4200
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		87000In Stock
    • 75000:$0.0890
    • 30000:$0.0925
    • 15000:$0.1008
    • 6000:$0.1077
    • 3000:$0.1147
    SI2356DS-T1-GE3
    DISTI # 32318889    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
    RoHS: Compliant    		2757
    • 76:$0.5266
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2356DS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 6000
    • 1500:$0.0988
    • 750:$0.1018
    • 375:$0.1051
    • 188:$0.1085
    • 94:$0.1122
    • 47:$0.1161
    • 1:$0.1204
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 3000
    • 30000:€0.0859
    • 18000:€0.0929
    • 12000:€0.0999
    • 6000:€0.1169
    • 3000:€0.1709
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Tape and Reel    		Asia - 0
      SI2356DS-T1-GE3
      DISTI # SI2356DS-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.0839
      • 18000:$0.0869
      • 12000:$0.0889
      • 6000:$0.0929
      • 3000:$0.0959
      SI2356DS-T1-GE3
      DISTI # 05AC9483      		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes27000
      • 1:$0.1370
      • 3000:$0.1370
      SI2356DS-T1-GE3
      DISTI # 01AC4982      		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes8890
      • 1000:$0.1550
      • 500:$0.1960
      • 250:$0.2340
      • 100:$0.2720
      • 50:$0.3280
      • 25:$0.3830
      • 1:$0.4810
      SI2356DS-T1-GE3
      DISTI # 70459514      		Vishay Siliconix40V .051ohm@10V 4.3A N-Ch T-FET
      RoHS: Compliant      		0
      • 25:$0.1880
      • 250:$0.1790
      • 500:$0.1700
      • 750:$0.1610
      • 1000:$0.1340
      SI2356DS-T1-GE3
      DISTI # 78-SI2356DS-T1-GE3      		Vishay IntertechnologiesMOSFET 40V Vds 12V Vgs SOT-23
      RoHS: Compliant      		76574
      • 1:$0.4300
      • 10:$0.2930
      • 100:$0.1970
      • 500:$0.1580
      • 1000:$0.1190
      • 3000:$0.1090
      • 6000:$0.1020
      • 9000:$0.0950
      • 24000:$0.0880
      SI2356DS-T1-GE3
      DISTI # TMOSS6841      		Vishay IntertechnologiesN-CHANNEL-FET 4,3A 40V SOT23
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$0.1301
      • 6000:$0.1226
      • 12000:$0.1152
      • 18000:$0.1041
      • 24000:$0.1003
      SI2356DS-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 12V Vgs SOT-23
      RoHS: Compliant      		Americas - 54000
        SI2356DS-T1-GE3
        DISTI # 2679679        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-2315000
        • 9000:£0.0763
        • 3000:£0.0889
        SI2356DS-T1-GE3
        DISTI # 2679679        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23
        RoHS: Compliant        		15000
        • 12000:$0.1260
        • 9000:$0.1300
        • 6000:$0.1310
        • 3000:$0.1350
        SI2356DS-T1-GE3
        DISTI # 2646369        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23
        RoHS: Compliant        		8230
        • 1000:$0.1950
        • 500:$0.2590
        • 100:$0.3460
        • 10:$0.5080
        • 1:$0.6300
        Bild Teil # Beschreibung
        SI2356DS-T1-GE3

        Mfr.#: SI2356DS-T1-GE3

        OMO.#: OMO-SI2356DS-T1-GE3

        		 MOSFET 40V Vds 12V Vgs SOT-23
        SI2356DS-T1-GE3

        Mfr.#: SI2356DS-T1-GE3

        OMO.#: OMO-SI2356DS-T1-GE3-VISHAY

        		 MOSFET N-CH 40V 4.3A SOT-23
        SI2356DS-T1-GE3-CUT TAPE

        Mfr.#: SI2356DS-T1-GE3-CUT TAPE

        OMO.#: OMO-SI2356DS-T1-GE3-CUT-TAPE-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5500
        Menge eingeben:
        Der aktuelle Preis von SI2356DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,13 $
        0,13 $
        10
        0,12 $
        1,20 $
        100
        0,11 $
        11,33 $
        500
        0,11 $
        53,50 $
        1000
        0,10 $
        100,70 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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