S29GL01GS11TFI020

Mfr. #:: S29GL01GS11TFI020
Hersteller:: Cypress Semiconductor
Beschreibung:: NOR Flash 1G 3V 110ns Parallel NOR Flash
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: S29GL01GS11TFI020 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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Mehr Informationen:: S29GL01GS11TFI020 Mehr Informationen S29GL01GS11TFI020 Product Details

Produkteigenschaft
Attributwert

Hersteller:: Cypress Semiconductor

Produktkategorie:: NOR-Blitz

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: TSOP-56

Serie:: S29GL01G/512/256/128S

Speichergröße:: 1 Gbit

Oberflächentyp:: Parallel

Organisation:: 64 M x 16

Timing-Typ:: Asynchron

Datenbusbreite:: 16 bit

Versorgungsspannung - Min.:: 2.7 V

Versorgungsspannung - Max.:: 3.6 V

Versorgungsstrom - Max.:: 100 mA

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 85 C

Verpackung:: Tablett

Speichertyp:: NOCH

Geschwindigkeit:: 110 ns

Die Architektur:: Finsternis

Marke:: Cypress Semiconductor

Feuchtigkeitsempfindlich:: ja

Produktart:: NOR-Blitz

Werkspackungsmenge:: 91

Unterkategorie:: Speicher & Datenspeicherung

Handelsname:: MirrorBit Eclipse

Gewichtseinheit:: 0.155100 oz

Tags: S29GL01GS11TFI0, S29GL01GS11TFI, S29GL01GS11T, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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S29GL01GS11TFI020 Beschreibung

***ical: NOR Flash Parallel 3V/3.3V 1Gbit 64M x 16bit 110ns 56-Pin TSOP Tray

***ure Electronics: GL-S Series 1 Gbit (64 M x 16) 3.6 V 110 ns Non-Volatile Memory - TSOP-56

***ark: IC, FLASH MEM, 1024MBIT, 110NS, 56-TSOP

S29GL01GS11TFI020 Mehr Informationen

MirrorBit® NOR GL Flash Memory Device - EXPANSION: Cypress has expanded it's offering of MirrorBit® NOR GL Flash Memory Devices to include the 100ns access speeds. This additional offering of Cypress MirrorBit® NOR GL Flash Memory now provide the fastest access times in the high-density versions available. MirrorBit® NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption.Learn MoreCypress MirrorBit® GL NOR Flash family is optimized for the voltage, density, cost-per-bit, reliability, performance, and scalability needs of a wide variety of embedded applications. With densities from 32MB to 2GB, each MirrorBit® NOR GL Flash Memory Device requires only a single 3.0V power supply for read and write functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MirrorBit® GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.View the entire MirrorBit® NOR GL Series

MirrorBit® NOR GL Flash Memory Device: Cypress MirrorBit® GL NOR Flash family is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MirrorBit® Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set compatible with the JEDEC Flash standards.

S29 GL-S MirrorBit® Eclipse™ Flash: Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
S29GL01GS11TFI020 DISTI # 428-4006-ND	Cypress Semiconductor	IC FLASH 1G PARALLEL 56TSOP RoHS: Compliant Min Qty: 1 Container: Tray	302In Stock	1001:$8.0845 546:$8.3632 273:$8.4500 182:$8.8898 91:$10.0978 25:$10.1536 10:$10.3890 1:$11.2200
S29GL01GS11TFI020 DISTI # 797-S29GL01GS11TFI02	Cypress Semiconductor	NOR Flash 1G 3V 110ns Parallel NOR Flash RoHS: Compliant	91	1:$9.6300 10:$8.9100 25:$8.7100 50:$8.6600 100:$7.8300 250:$7.6500
S29GL01GS11TFI020 DISTI # 2772773	Cypress Semiconductor	FLASH MEMORY, 1GBIT, 110NS, TSOP-48 RoHS: Compliant	87	100:£5.9300 50:£6.5500 25:£6.5900 10:£6.7400 1:£7.8500
S29GL01GS11TFI020 DISTI # 2772773	Cypress Semiconductor	FLASH MEMORY, 1GBIT, 110NS, TSOP-48 RoHS: Compliant	87	100:$14.3000 50:$15.0900 25:$15.9600 10:$18.0400 1:$19.3000

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Verfügbarkeit

Aktie:: 91
Auf Bestellung:: 2074
Menge eingeben:

Der aktuelle Preis von S29GL01GS11TFI020 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~9,62 $~~; ~~9,62 $~~

10: ~~8,90 $~~; ~~89,00 $~~

25: ~~8,70 $~~; ~~217,50 $~~

50: ~~8,65 $~~; ~~432,50 $~~

100: ~~7,82 $~~; ~~782,00 $~~

250: ~~7,65 $~~; ~~1 912,50 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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S29GL01GS11TFI020

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes