OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SPP35N10

SPP35N10
Mfr. #:
SPP35N10
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 100V 35A TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SPP35N10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SPP35, SPP3, SPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 100V 47A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***ponent Stockers USA
35 A 100 V 0.044 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***i-Key
MOSFET N-CH 100V 35A TO-220AB
*** Electronics
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***icroelectronics
N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
***th Star Micro
Transistor MOSFET N-CH 100V 40A 3-Pin (3+Tab) TO-220 Tube
*** Electronics
In a Tube of 50, N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220 STMicroelectronics STP40NF10L
***ure Electronics
STP40NF10L Series 100 V 33 mOhm N-Ch Low Gate Charge STripFET™ Mosfet TO-220
***ponent Stockers USA
40 A 100 V 0.036 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation
***r Electronics
Power Field-Effect Transistor, 40A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***el Electronic
AMPHENOL ICC - GSB3211311WEU - USB Connector, USB Type B, USB 3.0, Receptacle, 9 Positions, Through Hole Mount, Right Angle
***icroelectronics
N-CHANNEL 120V - 0.028 Ohm 40A TO-220 LOW GATE CHARGE STripFET™II POWER MOSFET
***ure Electronics
N-Channel 120 V 32 mOhm Flange Mount StripFET II Power Mosfet - TO-220
***el Electronic
DDR/DDR2/DDR3/DDR3L/LPDDR3/DDR4 Termination Regulator 3A 4.75V to 5.25V 20-Pin HTSSOP T/R
***ical
Trans MOSFET N-CH 120V 40A 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 40A I(D), 120V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:120V; Continuous Drain Current Id:160A; On Resistance Rds(On):0.032Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; Msl:- Rohs Compliant: Yes
***icroelectronics
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
*** Source Electronics
Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220
***ure Electronics
N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220
***enic
100V 35A 45´Î@10V15A 115W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***nell
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, TO-220
***Yang
Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***nell
MOSFET, P, TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.41ohm; Rds(on) Test Vo; Available until stocks are exhausted Alternative available
***r Electronics
Power Field-Effect Transistor, 8A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, P, TO-220; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:65W; MSL:- RoHS Compliant: No
***rchild Semiconductor
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ure Electronics
Single N-Channel 100 V 12 mOhm 58 nC OptiMOS™ Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH 100V 69A Automotive 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO220-3, RoHS
***ment14 APAC
MOSFET, N CH, 69A, 100V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.84V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:69A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 69 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 125
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***et
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail
***emi
N-Channel PowerTrench® MOSFET 100V, 57A, 15mΩ
*** Stop Electro
Power Field-Effect Transistor, 57A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ment14 APAC
MOSFET, N CH, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:228A
Teil # Mfg. Beschreibung Aktie Preis
SPP35N10
DISTI # SPP35N10IN-ND		Infineon Technologies AGMOSFET N-CH 100V 35A TO-220AB
RoHS: Compliant
Min Qty: 500
Container: Tube		Limited Supply - Call
    SPP35N10
    DISTI # 726-SPP35N10    		Infineon Technologies AGMOSFET N-Ch 100V 35A TO220-3
    RoHS: Compliant    		0
      SPP35N10Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		34468
      • 1000:$0.6700
      • 500:$0.7100
      • 100:$0.7400
      • 25:$0.7700
      • 1:$0.8300
      Bild Teil # Beschreibung
      SPP3095T252RGB

      Mfr.#: SPP3095T252RGB

      OMO.#: OMO-SPP3095T252RGB-1190

      		 Neu und Original
      SPP30N03,30N03

      Mfr.#: SPP30N03,30N03

      OMO.#: OMO-SPP30N03-30N03-1190

      		 Neu und Original
      SPP3216P020T

      Mfr.#: SPP3216P020T

      OMO.#: OMO-SPP3216P020T-1190

      		 Neu und Original
      SPP3401D

      Mfr.#: SPP3401D

      OMO.#: OMO-SPP3401D-1190

      		 Neu und Original
      SPP3401W

      Mfr.#: SPP3401W

      OMO.#: OMO-SPP3401W-1190

      		 Neu und Original
      SPP3403S23RG

      Mfr.#: SPP3403S23RG

      OMO.#: OMO-SPP3403S23RG-1190

      		 Neu und Original
      SPP3407WS23RGB

      Mfr.#: SPP3407WS23RGB

      OMO.#: OMO-SPP3407WS23RGB-1190

      		 Neu und Original
      SPP3413S23RG

      Mfr.#: SPP3413S23RG

      OMO.#: OMO-SPP3413S23RG-1190

      		 Neu und Original
      SPP3481BST6RGB

      Mfr.#: SPP3481BST6RGB

      OMO.#: OMO-SPP3481BST6RGB-1190

      		 Neu und Original
      SPP310R0KTRLF

      Mfr.#: SPP310R0KTRLF

      OMO.#: OMO-SPP310R0KTRLF-1098

      		 Wirewound Resistors - Through Hole 10 OHM 10% 3W
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4500
      Menge eingeben:
      Der aktuelle Preis von SPP35N10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,00 $
      1,00 $
      10
      0,95 $
      9,55 $
      100
      0,90 $
      90,45 $
      500
      0,85 $
      427,15 $
      1000
      0,80 $
      804,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      More Newest Products
      Top