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IPA60R170CFD7XKSA1

IPA60R170CFD7XKSA1
Mfr. #:
IPA60R170CFD7XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET HIGH POWER_NEW
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA60R170CFD7XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPA60R170CFD7XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FP-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
144 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
28 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
26 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Rohr
Serie:
CoolMOS CFD7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
68 ns
Typische Einschaltverzögerungszeit:
31 ns
Teil # Aliase:
IPA60R170CFD7 SP001617978
Tags
IPA60R1, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
CoolMOS CFD7 Power Transistor High Power 170mΩ 26W 600V PG-TO 220 FullPAK
***ark
Mosfet, N-Ch, 600V, 8A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.144Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ineon
Summary of Features: Ultra-fast body diode; Best-in-class reverse recovery charge (Qrr); Improved reverse diode dv/dt and dif/dt ruggedness; Lowest FOM RDS(on) x Qg and Eoss; Best-in-class RDS(on)/package combinations | Benefits: Best-in-class hard commutation ruggedness; Highest reliability for resonant topologies; Highest efficiency with outstanding ease-of-use/performance trade-off; Enabling increased power density solutions | Target Applications: Target Applications:
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPA60R170CFD7XKSA1
DISTI # C1S322000697407		Infineon Technologies AGMOSFETs
RoHS: Compliant		500
  • 500:$1.6100
IPA60R170CFD7XKSA1
DISTI # IPA60R170CFD7XKSA1-ND		Infineon Technologies AGMOSFET N-CH TO220FP-3
RoHS: Compliant
Min Qty: 1
Container: Tube		555In Stock
  • 1000:$1.5617
  • 500:$1.8848
  • 100:$2.4233
  • 10:$3.0160
  • 1:$3.3400
IPA60R170CFD7XKSA1
DISTI # IPA60R170CFD7XKSA1		Infineon Technologies AGCoolMOS CFD7 Power Transistor High Power 170mΩ 26W 600V PG-TO 220 FullPAK - Rail/Tube (Alt: IPA60R170CFD7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube		Americas - 0
  • 500:$1.3900
  • 1000:$1.2900
  • 2000:$1.2900
  • 3000:$1.1900
  • 5000:$1.1900
IPA60R170CFD7XKSA1
DISTI # 43AC9320		Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:8A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.144ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes270
  • 1:$3.1600
  • 10:$2.7200
  • 100:$2.2200
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5800
  • 5000:$1.5300
IPA60R170CFD7XKSA1
DISTI # 726-IPA60R170CFD7XKS		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		0
  • 1:$2.8900
  • 10:$2.4500
  • 100:$1.9600
  • 500:$1.7200
  • 1000:$1.4200
IPA60R170CFD7XKSA1
DISTI # 2807980		Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP
RoHS: Compliant		330
  • 1:£2.5400
  • 10:£1.9100
  • 100:£1.5300
  • 250:£1.4400
  • 500:£1.3400
IPA60R170CFD7XKSA1
DISTI # 2807980		Infineon Technologies AGMOSFET, N-CH, 600V, 8A, TO-220FP
RoHS: Compliant		260
  • 1:$2.9600
  • 10:$2.7700
  • 100:$2.4500
  • 250:$2.3100
  • 500:$2.2000
  • 1000:$2.0900
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von IPA60R170CFD7XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,88 $
2,88 $
10
2,44 $
24,40 $
100
1,95 $
195,00 $
500
1,71 $
855,00 $
1000
1,42 $
1 420,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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