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FDT86106LZ

FDT86106LZ
Mfr. #:
FDT86106LZ
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 100V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDT86106LZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FDT86106LZ Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-223-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
3.2 A
Rds On - Drain-Source-Widerstand:
108 mOhms
Qg - Gate-Ladung:
4.3 nC
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.2 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
1.8 mm
Länge:
6.5 mm
Serie:
FDT86106LZ
Transistortyp:
1 N-Channel
Breite:
3.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
8 S
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.003951 oz
Tags
FDT8610, FDT861, FDT8, FDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDT86106LZ Series 100 V 3.2 A 108 mOhm N-Ch PowerTrench Mosfet - SOT-223-3
***Semiconductor
N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ
***et Europe
Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R
***nell
MOSFET, N CH, 100V, 3.2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.2V
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Teil # Mfg. Beschreibung Aktie Preis
FDT86106LZ
DISTI # V36:1790_06338095		ON SemiconductorFD5 100V/20V NCH POWERTRENCH M4000
  • 4000:$0.4515
FDT86106LZ
DISTI # V72:2272_06338095		ON SemiconductorFD5 100V/20V NCH POWERTRENCH M3901
  • 3000:$0.4697
  • 1000:$0.4722
  • 500:$0.5973
  • 250:$0.6773
  • 100:$0.6844
  • 25:$0.8815
  • 10:$0.8910
  • 1:$1.0440
FDT86106LZ
DISTI # FDT86106LZCT-ND		ON SemiconductorMOSFET N-CH 100V 3.2A SOT-223-4
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2928In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
FDT86106LZ
DISTI # FDT86106LZDKR-ND		ON SemiconductorMOSFET N-CH 100V 3.2A SOT-223-4
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2928In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
FDT86106LZ
DISTI # FDT86106LZTR-ND		ON SemiconductorMOSFET N-CH 100V 3.2A SOT-223-4
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		On Order
  • 4000:$0.5236
FDT86106LZ
DISTI # 27049944		ON SemiconductorFD5 100V/20V NCH POWERTRENCH M4000
  • 4000:$0.4515
FDT86106LZ
DISTI # 30316638		ON SemiconductorFD5 100V/20V NCH POWERTRENCH M3901
  • 3000:$0.4697
  • 1000:$0.4722
  • 500:$0.5973
  • 250:$0.6773
  • 100:$0.6844
  • 25:$0.8815
  • 15:$0.8910
FDT86106LZ
DISTI # FDT86106LZ		ON SemiconductorTrans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT86106LZ)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.4439
  • 8000:$0.4409
  • 16000:$0.4349
  • 24000:$0.4299
  • 40000:$0.4189
FDT86106LZ
DISTI # FDT86106LZ		ON SemiconductorTrans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FDT86106LZ)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    FDT86106LZ
    DISTI # 27T6451    		ON SemiconductorMOSFET Transistor, N Channel, 3.2 A, 100 V, 0.08 ohm, 10 V, 1.5 V0
    • 1:$0.6800
    FDT86106LZ
    DISTI # 512-FDT86106LZ    		ON SemiconductorMOSFET 100V N-Channel PowerTrench MOSFET
    RoHS: Compliant    		2355
    • 1:$1.1200
    • 10:$0.9520
    • 100:$0.7320
    • 500:$0.6470
    • 1000:$0.5100
    • 4000:$0.4530
    FDT86106LZ
    DISTI # 7599706P    		ON SemiconductorMOSFET N-CHANNEL 100V 3.2A SOT223, RL3585
    • 50:£0.5360
    • 500:£0.3640
    • 2500:£0.3340
    • 5000:£0.3240
    FDT86106LZ
    DISTI # 7599706    		ON SemiconductorMOSFET N-CHANNEL 100V 3.2A SOT223, PK85
    • 5:£0.9480
    • 50:£0.5360
    • 500:£0.3640
    • 2500:£0.3340
    • 5000:£0.3240
    FDT86106LZ
    DISTI # C1S541901395353    		ON SemiconductorTrans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R
    RoHS: Compliant    		4000
    • 4000:$0.4515
    FDT86106LZ
    DISTI # C1S541901549893    		ON SemiconductorTrans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R
    RoHS: Compliant    		3901
    • 250:$0.6773
    • 100:$0.6844
    • 25:$0.8815
    • 10:$0.8910
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    		 Fixed Inductors WE-PD2 5820 33uH .9A .52Ohm
    61000621121

    Mfr.#: 61000621121

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    		 Headers & Wire Housings WR-PHD 2.54mm SMT 6P Hdr Dual Strt
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    		 Common Mode Chokes / Filters 51uH 250mA -30%/50% 5.2x3.2mm SMD
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    		 Terminals WP-SMBU SMT Bush Type A M4 Thread
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    Verfügbarkeit
    Aktie:
    22
    Auf Bestellung:
    2005
    Menge eingeben:
    Der aktuelle Preis von FDT86106LZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,11 $
    1,11 $
    10
    0,95 $
    9,52 $
    100
    0,73 $
    73,20 $
    500
    0,65 $
    323,50 $
    1000
    0,51 $
    510,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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