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SIHH120N60E-T1-GE3

SIHH120N60E-T1-GE3
Mfr. #:
SIHH120N60E-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 600V Vds; +/-30V Vgs PowerPAK 8x8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIHH120N60E-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHH120N60E-T1-GE3 DatasheetSIHH120N60E-T1-GE3 Datasheet (P4-P6)SIHH120N60E-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIHH120N60E-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
24 A
Rds On - Drain-Source-Widerstand:
120 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
44 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Serie:
E
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
6.9 S
Abfallzeit:
29 ns
Produktart:
MOSFET
Anstiegszeit:
47 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
25 ns
Tags
SIHH1, SIHH, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Teil # Mfg. Beschreibung Aktie Preis
SIHH120N60E-T1-GE3
DISTI # V99:2348_22587816		Vishay IntertechnologiesE Series Power MOSFET PowerPAK 8x8, (TO-252), 120 m @ 10V0
    SIHH120N60E-T1-GE3
    DISTI # SIHH120N60E-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 600V PPAK 8X8
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 3000:$3.0660
    SIHH120N60E-T1-GE3
    DISTI # SIHH120N60E-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 600V PPAK 8X8
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$3.3159
    • 500:$3.9317
    • 100:$4.6185
    • 10:$5.6370
    • 1:$6.2800
    SIHH120N60E-T1-GE3
    DISTI # SIHH120N60E-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 600V PPAK 8X8
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$3.3159
    • 500:$3.9317
    • 100:$4.6185
    • 10:$5.6370
    • 1:$6.2800
    SIHH120N60E-T1-GE3
    DISTI # SIHH120N60E-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 600V - Tape and Reel (Alt: SIHH120N60E-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 18000:$2.7900
    • 30000:$2.7900
    • 12000:$2.8900
    • 6000:$2.9900
    • 3000:$3.0900
    SIHH120N60E-T1-GE3
    DISTI # 81AC3462    		Vishay IntertechnologiesN-CHANNEL 600V0
    • 20000:$2.7000
    • 12000:$2.7400
    • 8000:$2.8500
    • 4000:$3.0700
    • 2000:$3.2900
    • 1:$3.4400
    SIHH120N60E-T1-GE3
    DISTI # 99AC0537    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 24A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.106ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power RoHS Compliant: Yes50
    • 500:$4.3400
    • 250:$4.9400
    • 100:$5.3600
    • 50:$5.7600
    • 25:$6.1500
    • 10:$6.5400
    • 1:$7.3300
    SIHH120N60E-T1-GE3
    DISTI # 78-SIHH120N60E-T1GE3    		Vishay IntertechnologiesMOSFET 600V Vds,+/-30V Vgs PowerPAK 8x8
    RoHS: Compliant    		0
    • 1:$7.2600
    • 10:$6.4800
    • 100:$5.3100
    • 250:$4.8900
    • 500:$4.3000
    • 1000:$3.6300
    • 3000:$3.3400
    SIHH120N60E-T1-GE3
    DISTI # 3014144    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 24A, 150DEG C, 156W50
    • 100:£4.3900
    • 10:£5.3500
    • 1:£6.5800
    SIHH120N60E-T1-GE3
    DISTI # 3014144    		Vishay IntertechnologiesMOSFET, N-CH, 600V, 24A, 150DEG C, 156W
    RoHS: Compliant    		50
    • 1000:$3.8100
    • 500:$4.3100
    • 250:$4.8400
    • 100:$5.0800
    • 10:$6.0600
    • 1:$7.7700
    Bild Teil # Beschreibung
    SIHH120N60E-T1-GE3

    Mfr.#: SIHH120N60E-T1-GE3

    OMO.#: OMO-SIHH120N60E-T1-GE3

    		 MOSFET 600V Vds; +/-30V Vgs PowerPAK 8x8
    SIHH120N60E-T1-GE3

    Mfr.#: SIHH120N60E-T1-GE3

    OMO.#: OMO-SIHH120N60E-T1-GE3-VISHAY

    		 MOSFET N-CHAN 600V PPAK 8X8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von SIHH120N60E-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    7,26 $
    7,26 $
    10
    6,48 $
    64,80 $
    100
    5,31 $
    531,00 $
    250
    4,89 $
    1 222,50 $
    500
    4,30 $
    2 150,00 $
    1000
    3,63 $
    3 630,00 $
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