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S27KS0641DPBHI020

S27KS0641DPBHI020
Mfr. #:
S27KS0641DPBHI020
Hersteller:
Cypress Semiconductor
Beschreibung:
DRAM HyperRAM 1.8-V 64Mb
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S27KS0641DPBHI020 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S27KS0641DPBHI020 Mehr Informationen S27KS0641DPBHI020 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
DRAM
RoHS:
Y
Typ:
HyperRAM
Datenbusbreite:
8 bit
Organisation:
8 M x 8
Paket / Koffer:
FBGA-24
Speichergröße:
64 Mbit
Maximale Taktfrequenz:
166 MHz
Zugriffszeit:
36 ns
Versorgungsspannung - Max.:
3.6 V
Versorgungsspannung - Min.:
1.7 V
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Serie:
S27KS0641
Verpackung:
Tablett
Marke:
Cypress Semiconductor
Montageart:
SMD/SMT
Feuchtigkeitsempfindlich:
ja
Produktart:
DRAM
Werkspackungsmenge:
338
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
HyperRAM
Gewichtseinheit:
0.002949 oz
Tags
S27KS, S27K, S27
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**e
    E**e
    JP

    Favorite store.

    2019-05-03
    D***a
    D***a
    RU

    The order came. In principle, quickly.

    2019-09-22
    A***v
    A***v
    RU

    In the package, many, good

    2019-05-17
***ress Semiconductor SCT
HyperBus Memory, 64 Mbit Density, 36 ns Initial Access Time, 333 MBps Interface Bandwidth, FBGA-24, RoHS
***ical
DRAM Chip DDR SDRAM 64Mbit 8Mx8 1.8V 24-Pin Fortified BGA Tray
***ca Corp
Memory Circuit, 8MX8, CMOS, PBGA24
***estock Electronics HK limited
IC DRAM 64MBIT 1.8V 166MHZ 24BGA
***i-Key
IC PSRAM 64MBIT PARALLEL 24FBGA
***nell
DRAM, 8M X 8BIT, -40 TO 85DEG C
***ark
Dram, 8M X 8Bit, -40 To 85Deg C; Dram Type:hyperram; Dram Density:64Mbit; Dram Memory Configuration:dram Memory Configuration; Clock Frequency:166Mhz; Memory Case Style:fbga; No. Of Pins:24Pins; Supply Voltage Nom:1.8V Rohs Compliant: Yes
S27KS0641 HyperRAM™ Self-Refresh DRAM
Cypress Semiconductor S27KS0641 HyperRAM™ Self-Refresh DRAM belongs to HyperRAM family and operates at 1.8V. This DRAM features Double-Data Rate (DDR), sequential burst transactions, configurable burst characteristics, and 8-bit data bus. The S27KS0641 DRAM offers interface bandwidth up to 333MB/s and Moisture Sensitivity Level 3 (MSL3). The operating temperature of this DRAM ranges from -40°C to 105°C. This self-refresh DRAM is free from lead, RoHS compliant, and available in a 24-ball FBGA package.
Teil # Mfg. Beschreibung Aktie Preis
S27KS0641DPBHI020
DISTI # V36:1790_16216209		Cypress Semiconductor8 Mbyte Self-Refresh DRAM 3.0V/1.8V 64 Mbit
RoHS: Compliant		95
  • 338:$2.5280
S27KS0641DPBHI020
DISTI # V99:2348_16216209		Cypress Semiconductor8 Mbyte Self-Refresh DRAM 3.0V/1.8V 64 Mbit
RoHS: Compliant		88
  • 338:$2.5280
S27KS0641DPBHI020
DISTI # 428-3858-ND		Cypress SemiconductorIC DRAM 64M PARALLEL 24BGA
RoHS: Compliant
Min Qty: 1
Container: Tray		782In Stock
  • 1014:$3.2347
  • 676:$3.4023
  • 338:$3.5324
  • 100:$3.5456
  • 50:$3.9536
  • 25:$3.9756
  • 10:$4.0640
  • 1:$4.4800
S27KS0641DPBHI020
DISTI # 30571473		Cypress Semiconductor8 Mbyte Self-Refresh DRAM 3.0V/1.8V 64 Mbit
RoHS: Compliant		95
  • 95:$2.5280
S27KS0641DPBHI020
DISTI # 30173049		Cypress Semiconductor8 Mbyte Self-Refresh DRAM 3.0V/1.8V 64 Mbit
RoHS: Compliant		88
  • 3:$2.5280
S27KS0641DPBHI020
DISTI # 727-S27KS0641DPBHI02		Cypress SemiconductorDRAM HyperRAM 1.8-V 64Mb
RoHS: Compliant		1012
  • 1:$4.2600
  • 10:$3.8700
  • 25:$3.7900
  • 50:$3.7700
  • 100:$3.3800
  • 250:$3.3600
  • 500:$3.2200
  • 1000:$3.0700
Bild Teil # Beschreibung
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OMO.#: OMO-3313J-1-103E

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Mfr.#: FTSH-110-01-L-DV-K

OMO.#: OMO-FTSH-110-01-L-DV-K

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Mfr.#: ERJ-2RKF1003X

OMO.#: OMO-ERJ-2RKF1003X

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ERJ-3GEY0R00V

Mfr.#: ERJ-3GEY0R00V

OMO.#: OMO-ERJ-3GEY0R00V

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3313J-1-103E

Mfr.#: 3313J-1-103E

OMO.#: OMO-3313J-1-103E-BOURNS

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DF13EA-30DP-1.25V(51)

Mfr.#: DF13EA-30DP-1.25V(51)

OMO.#: OMO-DF13EA-30DP-1-25V-51--HIROSE

 Headers & Wire Housings 1.25 DR SRT PIN HDR 30P SMT GLD W/O BOSS
S26KS128SDPBHI020

Mfr.#: S26KS128SDPBHI020

OMO.#: OMO-S26KS128SDPBHI020-CYPRESS-SEMICONDUCTOR

 IC FLASH 128M PARALLEL 24FBGA HyperFlash KS
DP83867IRPAPR

Mfr.#: DP83867IRPAPR

OMO.#: OMO-DP83867IRPAPR-TEXAS-INSTRUMENTS

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Verfügbarkeit
Aktie:
598
Auf Bestellung:
2581
Menge eingeben:
Der aktuelle Preis von S27KS0641DPBHI020 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,26 $
4,26 $
10
3,87 $
38,70 $
25
3,79 $
94,75 $
50
3,77 $
188,50 $
100
3,38 $
338,00 $
250
3,36 $
840,00 $
500
3,22 $
1 610,00 $
1000
3,07 $
3 070,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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