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SI5902BDC-T1-GE3

SI5902BDC-T1-GE3
Mfr. #:
SI5902BDC-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs 1206-8 ChipFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5902BDC-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5902BDC-T1-GE3 DatasheetSI5902BDC-T1-GE3 Datasheet (P4-P6)SI5902BDC-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SI5902BDC-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
ChipFET-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
65 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
7 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.12 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI54
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
5 S
Abfallzeit:
25 ns
Produktart:
MOSFET
Anstiegszeit:
80 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
15 ns
Gewichtseinheit:
0.002998 oz
Tags
SI5902B, SI5902, SI590, SI59, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor; 3.7 A; 30V; 8-Pin 1206 ChipFET
***ure Electronics
Dual N-Channel 30 V 0.065 O 7 nC Surface Mount Mosfet - ChipFET-1206-8
***nell
MOSFET, DUAL, N-CH, 30V, 4A, 1206-8
***et Europe
Trans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R
***i-Key
MOSFET 2N-CH 30V 4A 1206-8
***Components
TRANS MOSFET N-CH 30V 3.7A
***ronik
DUAL 30V 4A 65mOhm ChipFET
***
DUAL N-CH 30V (D-S)
***ark
Transistor Polarity:dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.053Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:3.12W; No. Of Pins:8Pins Rohs Compliant: No
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL, N-CH, 30V, 4A, 1206-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:3.12W; Transistor Case Style:ChipFET; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI5902BDC-T1-GE3
DISTI # V72:2272_09216238		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R
RoHS: Compliant		2793
  • 1000:$0.5570
  • 500:$0.6838
  • 250:$0.8017
  • 100:$0.8347
  • 25:$0.9731
  • 10:$1.0812
  • 1:$1.4362
SI5902BDC-T1-GE3
DISTI # V36:1790_09216238		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R
RoHS: Compliant		0
  • 3000:$0.5181
SI5902BDC-T1-GE3
DISTI # SI5902BDC-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9551In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SI5902BDC-T1-GE3
DISTI # SI5902BDC-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9551In Stock
  • 1000:$0.6165
  • 500:$0.7808
  • 100:$0.9452
  • 10:$1.2120
  • 1:$1.3600
SI5902BDC-T1-GE3
DISTI # SI5902BDC-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 4A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 15000:$0.5107
  • 6000:$0.5307
  • 3000:$0.5586
SI5902BDC-T1-GE3
DISTI # 33635116		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R
RoHS: Compliant		2793
  • 14:$1.4362
SI5902BDC-T1-GE3
DISTI # SI5902BDC-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5902BDC-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.4872
  • 18000:$0.5007
  • 12000:$0.5149
  • 6000:$0.5367
  • 3000:$0.5531
SI5902BDC-T1-GE3
DISTI # SI5902BDC-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R (Alt: SI5902BDC-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI5902BDC-T1-GE3
    DISTI # 04X9765    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.7A 8-Pin Chip FET T/R - Product that comes on tape, but is not reeled (Alt: 04X9765)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$0.7130
    • 500:$0.9040
    • 250:$0.9780
    • 100:$1.0500
    • 50:$1.2100
    • 25:$1.3800
    • 1:$1.6600
    SI5902BDC-T1-GE3
    DISTI # 86R3904    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 4A, CHIPFET-8, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins RoHS Compliant: Yes0
    • 10000:$0.4830
    • 6000:$0.4940
    • 4000:$0.5130
    • 2000:$0.5700
    • 1000:$0.6270
    • 1:$0.6540
    SI5902BDC-T1-GE3
    DISTI # 04X9765    		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 30V, 4A, CHIPFET-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1458
    • 1:$0.4470
    • 25:$0.4470
    • 50:$0.4470
    • 100:$0.4470
    • 250:$0.4470
    • 500:$0.4470
    • 1000:$0.4470
    SI5902BDC-T1-GE3.
    DISTI # 15AC0301    		Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.053ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:3.12W,No. of Pins:8Pins RoHS Compliant: No0
    • 10000:$0.4830
    • 6000:$0.4940
    • 4000:$0.5130
    • 2000:$0.5700
    • 1000:$0.6270
    • 1:$0.6540
    SI5902BDC-T1-GE3
    DISTI # 70616989    		Vishay SiliconixSI5902BDC-T1-GE3 Dual N-channel MOSFET Transistor,3.7 A,30V,8-Pin 1206 ChipFET
    RoHS: Compliant    		0
    • 300:$0.7800
    • 600:$0.7000
    • 1500:$0.6300
    • 3000:$0.6100
    SI5902BDC-T1-GE3
    DISTI # 78-SI5902BDC-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs 1206-8 ChipFET
    RoHS: Compliant    		4563
    • 1:$1.3200
    • 10:$1.0900
    • 100:$0.8390
    • 500:$0.7220
    • 1000:$0.5690
    • 3000:$0.5310
    • 6000:$0.5050
    • 9000:$0.4940
    SI5902BDC-T1-GE3
    DISTI # 2454808    		Vishay IntertechnologiesMOSFET, DUAL, N-CH, 30V, 4A, 1206-8
    RoHS: Compliant    		0
    • 3000:$0.8420
    • 1000:$0.8590
    • 500:$1.0900
    • 100:$1.2700
    • 10:$1.6600
    • 1:$2.0000
    SI5902BDC-T1-GE3
    DISTI # 2454808RL    		Vishay IntertechnologiesMOSFET, DUAL, N-CH, 30V, 4A, 1206-8
    RoHS: Compliant    		0
    • 3000:$0.8420
    • 1000:$0.8590
    • 500:$1.0900
    • 100:$1.2700
    • 10:$1.6600
    • 1:$2.0000
    SI5902BDC-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs 1206-8 ChipFET
    RoHS: Compliant    		Americas - 3000
    • 3000:$0.5330
    • 6000:$0.5060
    • 12000:$0.4900
    • 18000:$0.4770
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von SI5902BDC-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,32 $
    1,32 $
    10
    1,09 $
    10,90 $
    100
    0,84 $
    83,90 $
    500
    0,72 $
    361,00 $
    1000
    0,57 $
    569,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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