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A2T09D400-23NR6

A2T09D400-23NR6
Mfr. #:
A2T09D400-23NR6
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A2T09D400-23NR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2T09D400-23NR6 DatasheetA2T09D400-23NR6 Datasheet (P4-P6)A2T09D400-23NR6 Datasheet (P7-P9)A2T09D400-23NR6 Datasheet (P10-P12)A2T09D400-23NR6 Datasheet (P13-P15)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
Polarität des Transistors:
N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
2.7 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 70 V
Gewinnen:
17.9 dB
Ausgangsleistung:
93 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
OM-1230-4L2S-7
Verpackung:
Spule
Arbeitsfrequenz:
716 MHz to 960 MHz
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Anzahl der Kanäle:
2 Channel
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Teil # Aliase:
935318726528
Gewichtseinheit:
0.186416 oz
Tags
A2T09, A2T0, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
***W
RF Power Transistor,716 to 960 MHz, 400 W, Typ Gain in dB is 17.9 @ 836 MHz, 28 V, LDMOS, SOT1819
***et Europe
Trans MOSFET N-CH -0.5/70V 6-Pin OM-1230 T/R
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
***hardson RFPD
RF POWER TRANSISTOR
Teil # Mfg. Beschreibung Aktie Preis
A2T09D400-23NR6
DISTI # A2T09D400-23NR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Not compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$125.4911
A2T09D400-23NR6
DISTI # A2T09D400-23NR6		Avnet, Inc.Trans MOSFET N-CH -0.5/70V 6-Pin OM-1230 T/R - Tape and Reel (Alt: A2T09D400-23NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 150:$137.4900
  • 300:$132.0900
  • 600:$126.8900
  • 900:$122.2900
  • 1500:$119.9900
A2T09D400-23NR6
DISTI # 841-A2T09D400-23NR6		NXP SemiconductorsRF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
RoHS: Compliant		0
  • 1:$150.6600
  • 5:$147.7300
  • 10:$142.8600
  • 25:$136.8100
  • 50:$134.9300
  • 100:$125.4900
  • 150:$122.6700
A2T09D400-23NR6
DISTI # A2T09D400-23NR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		6562
  • 1:$157.7700
  • 10:$145.8200
  • 25:$141.5400
Bild Teil # Beschreibung
A2T09D400-23NR6

Mfr.#: A2T09D400-23NR6

OMO.#: OMO-A2T09D400-23NR6

 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
A2T09D400-23NR6

Mfr.#: A2T09D400-23NR6

OMO.#: OMO-A2T09D400-23NR6-NXP-SEMICONDUCTORS

 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG, 28 V
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von A2T09D400-23NR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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