IRFS7530TRLPBF

IRFS7530TRLPBF
Mfr. #:
IRFS7530TRLPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFET N CH 60V 195A D2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS7530TRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFS7530TRLPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
195 A
Rds On - Drain-Source-Widerstand:
1.65 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
274 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
375 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
StarkIRFET
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
242 S
Abfallzeit:
104 ns
Produktart:
MOSFET
Anstiegszeit:
141 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
172 ns
Typische Einschaltverzögerungszeit:
52 ns
Teil # Aliase:
SP001567992
Gewichtseinheit:
0.139332 oz
Tags
IRFS7530T, IRFS7530, IRFS753, IRFS75, IRFS7, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 195 A, 60 V, 0.00165 Ohm, 10 V, 3.7 V
*** Source Electronics
MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
***trelec
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - D2PAK
***ied Electronics & Automation
MOSFET,60V, 195A, 2.0mOhm, 274 nC, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFS7530TRLPBF
DISTI # IRFS7530TRLPBFCT-ND
Infineon Technologies AGMOSFET N CH 60V 195A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
800In Stock
  • 100:$2.8646
  • 10:$3.4450
  • 1:$3.8300
IRFS7530TRLPBF
DISTI # IRFS7530TRLPBFDKR-ND
Infineon Technologies AGMOSFET N CH 60V 195A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
800In Stock
  • 100:$2.8646
  • 10:$3.4450
  • 1:$3.8300
IRFS7530TRLPBF
DISTI # IRFS7530TRLPBFTR-ND
Infineon Technologies AGMOSFET N CH 60V 195A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
On Order
  • 800:$2.0930
IRFS7530TRLPBF
DISTI # IRFS7530TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 60V 295A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRFS7530TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.2900
  • 1600:$1.1900
  • 3200:$1.1900
  • 4800:$1.0900
  • 8000:$1.0900
IRFS7530TRLPBF
DISTI # SP001567992
Infineon Technologies AGTrans MOSFET N-CH 60V 295A 3-Pin D2PAK T/R (Alt: SP001567992)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.7900
  • 1600:€1.4900
  • 3200:€1.3900
  • 4800:€1.2900
  • 8000:€1.1900
IRFS7530TRLPBF
DISTI # 12AC9744
Infineon Technologies AGMOSFET, N-CH, 60V, 295A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:295A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.00165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power RoHS Compliant: Yes576
  • 500:$2.3500
  • 250:$2.5900
  • 100:$2.7100
  • 50:$2.8300
  • 25:$2.9600
  • 10:$3.0800
  • 1:$3.5700
IRFS7530TRLPBF
DISTI # 942-IRFS7530TRLPBF
Infineon Technologies AGMOSFET MOSFET N CH 60V 195A D2PAK
RoHS: Compliant
1395
  • 1:$3.0100
  • 10:$2.5600
  • 100:$2.2100
  • 250:$2.1000
  • 500:$1.8800
IRFS7530TRLPBF
DISTI # IRFS7530PBF-GURT
Infineon Technologies AGN-Ch 60V 195A 375W 0,002R DPak
RoHS: Compliant
0
  • 10:€1.7700
  • 50:€1.4700
  • 200:€1.3700
  • 500:€1.3200
IRFS7530TRLPBF
DISTI # TMOSP12758
Infineon Technologies AGN-CH 60V 295A 2mOhm TO263
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 800:$2.3300
  • 1600:$2.1900
  • 2400:$2.0600
  • 3200:$1.8700
  • 4000:$1.8000
IRFS7530TRLPBF
DISTI # 2709996
Infineon Technologies AGMOSFET, N-CH, 60V, 295A, TO-263AB
RoHS: Compliant
576
  • 500:$3.0000
  • 800:$3.0000
  • 250:$3.3400
  • 100:$3.5200
  • 10:$4.0600
  • 1:$4.7800
IRFS7530TRLPBF
DISTI # 2709996
Infineon Technologies AGMOSFET, N-CH, 60V, 295A, TO-263AB
RoHS: Compliant
616
  • 500:£1.5000
  • 250:£1.6700
  • 100:£1.7500
  • 10:£2.0200
  • 1:£2.6900
Bild Teil # Beschreibung
SIRA12BDP-T1-GE3

Mfr.#: SIRA12BDP-T1-GE3

OMO.#: OMO-SIRA12BDP-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAK SO-8
TPS563240DDCR

Mfr.#: TPS563240DDCR

OMO.#: OMO-TPS563240DDCR

Switching Voltage Regulators AUGUSTA3-HF ECO MODE DEVICE
SIRA12BDP-T1-GE3

Mfr.#: SIRA12BDP-T1-GE3

OMO.#: OMO-SIRA12BDP-T1-GE3-VISHAY

MOSFET N-CHAN 30V
GRM55DR72H474KW10L

Mfr.#: GRM55DR72H474KW10L

OMO.#: OMO-GRM55DR72H474KW10L-428

Cap Ceramic 0.47uF 500V X7R 10% Pad SMD 2220 125C T/R
CRCW1206470RFKEAC

Mfr.#: CRCW1206470RFKEAC

OMO.#: OMO-CRCW1206470RFKEAC-VISHAY-DALE

D25/CRCW1206-C 100 470R 1% ET1
TAJB106K020RNJV

Mfr.#: TAJB106K020RNJV

OMO.#: OMO-TAJB106K020RNJV-AVX

Tantalum Capacitors - Solid SMD 20V 10uF 10% 1210 ESR= 2.1 Ohms
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRFS7530TRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,01 $
3,01 $
10
2,56 $
25,60 $
100
2,21 $
221,00 $
250
2,10 $
525,00 $
500
1,88 $
940,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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