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MRFX1K80HR5

MRFX1K80HR5
Mfr. #:
MRFX1K80HR5
Hersteller:
NXP Semiconductors
Beschreibung:
RF MOSFET Transistors 65V LDMOS Transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRFX1K80HR5 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRFX1K80HR5 Mehr Informationen MRFX1K80HR5 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Polarität des Transistors:
Dualer N-Kanal
Technologie:
Si
Id - Kontinuierlicher Drainstrom:
43 A
Vds - Drain-Source-Durchbruchspannung:
- 500 mV, 179 V
Gewinnen:
25.1 dB
Ausgangsleistung:
1.8 kW
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Montageart:
SMD/SMT
Paket / Koffer:
NI-1230H-4
Verpackung:
Spule
Arbeitsfrequenz:
1.8 MHz to 400 MHz
Serie:
MRFX1K80
Typ:
HF-Leistungs-MOSFET
Marke:
NXP Semiconductors
Vorwärtstranskonduktanz - Min:
44.7 S
Anzahl der Kanäle:
2 Channel
Pd - Verlustleistung:
2247 W
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Vgs - Gate-Source-Spannung:
- 6 V, 10 V
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Teil # Aliase:
935351859178
Gewichtseinheit:
0.464156 oz
Tags
MRFX1K80H, MRFX1, MRFX, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Semiconductors SCT
Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V, CFM4F, RoHS
***ure Electronics
RF MOSFET Transistors 65V LDMOS Transistor
***W
RF Power Transistor, 1.8 to 400 MHz, 1800 W, Typ Gain in dB is 24 @ 230 MHz, 65 V, LDMOS, SOT1787-1
***ical
Trans RF MOSFET N-CH 179V 5-Pin NI-1230H T/R
***roFlash
RF Power Field-Effect Transistor
***ark
600MHz 1.8KW NI1230H-4S RoHS Compliant: Yes
***el Electronic
IC REG LINEAR 2.7V 80MA SC82AB
***nell
LDMOS TRANSISTOR, RF, 193V, NI-1230H-4S; Drain Source Voltage Vds: 193V; Continuous Drain Current Id: -; Power Dissipation Pd: 2.247kW; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 400MHz; RF Transistor Case: NI-1
MRFX Series 65V LDMOS Transistors
NXP Semiconductors MRFX Series 65V LDMOS Transistors offer high RF output power, superior ruggedness, and thermal performance. These transistors feature high power density, lower current losses, high efficiency, easier matching to 50Ω, wide safety margin, and negligible magnetic radiation. The higher power density, low current, and high safety margin enables highly reliable and more integrated industry 4.0 systems with better energy management.
Teil # Mfg. Beschreibung Aktie Preis
MRFX1K80HR5
DISTI # V72:2272_18492106		NXP SemiconductorsWIDEBAND RF POWER TRANSISTOR,78
  • 75000:$195.3300
  • 30000:$196.0200
  • 15000:$196.7100
  • 6000:$197.4100
  • 3000:$198.1000
  • 1000:$198.7900
  • 500:$199.4800
  • 250:$200.1800
  • 100:$200.8700
  • 50:$223.1900
  • 25:$228.9300
  • 10:$232.4400
  • 1:$244.3800
MRFX1K80HR5
DISTI # 568-13464-1-ND		NXP SemiconductorsRF MOSFET LDMOS 65V NI-1230H-4S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		98In Stock
  • 10:$237.9260
  • 1:$248.4200
MRFX1K80HR5
DISTI # 568-13464-6-ND		NXP SemiconductorsRF MOSFET LDMOS 65V NI-1230H-4S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		98In Stock
  • 10:$237.9260
  • 1:$248.4200
MRFX1K80HR5
DISTI # 568-13464-2-ND		NXP SemiconductorsRF MOSFET LDMOS 65V NI-1230H-4S
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		50In Stock
  • 50:$225.9010
MRFX1K80HR5
DISTI # 25820857		NXP SemiconductorsWIDEBAND RF POWER TRANSISTOR,78
  • 50:$223.1900
  • 25:$228.9300
  • 10:$232.4400
  • 1:$244.3800
MRFX1K80HR5
DISTI # MRFX1K80HR5		Avnet, Inc.RF Components - Tape and Reel (Alt: MRFX1K80HR5)
RoHS: Compliant
Min Qty: 1
Container: Reel		Americas - 0
  • 1:$251.1900
  • 10:$247.4900
  • 25:$242.5900
  • 50:$237.7900
  • 100:$228.5900
  • 500:$220.1900
  • 1000:$215.9900
MRFX1K80HR5
DISTI # 34AC1921		Avnet, Inc.RF Components - Product that comes on tape, but is not reeled (Alt: 34AC1921)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$278.9393
  • 10:$277.3810
MRFX1K80HR5
DISTI # 34AC1921		NXP SemiconductorsRF FET, 193V, 2.247W, NI-1230H-4S,Drain Source Voltage Vds:193V,Continuous Drain Current Id:-,Power Dissipation Pd:2.247kW,Operating Frequency Min:1.8MHz,Operating Frequency Max:400MHz,RF Transistor Case:NI-1230H-4S,MSL:- RoHS Compliant: Yes6
  • 1:$248.4200
  • 10:$237.9200
  • 25:$231.9200
  • 50:$225.9000
MRFX1K80HR5178NXP Semiconductors 
RoHS: Not Compliant		184
  • 1000:$304.3300
  • 500:$320.3500
  • 100:$333.5100
  • 25:$347.8100
  • 1:$374.5600
MRFX1K80HR5
DISTI # 771-MRFX1K80HR5		NXP SemiconductorsRF MOSFET Transistors 65V LDMOS Transistor
RoHS: Compliant		81
  • 1:$248.4200
  • 5:$243.1800
  • 10:$237.9200
  • 25:$231.9200
MRFX1K80HR5
DISTI # MRFX1K80HR5		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		258
  • 1:$234.1200
  • 10:$227.9600
  • 25:$224.9900
MRFX1K80HR5
DISTI # 2784044		NXP SemiconductorsLDMOS TRANSISTOR, RF, 193V, NI-1230H-4S
RoHS: Compliant		78
  • 1:£304.0000
  • 5:£252.0000
MRFX1K80HR5
DISTI # C1S537101635614		NXP SemiconductorsMOSFETs
RoHS: Compliant		78
  • 50:$223.1900
  • 25:$228.9300
  • 10:$232.4400
  • 1:$244.3800
MRFX1K80HR5
DISTI # 2784044		NXP SemiconductorsLDMOS TRANSISTOR, RF, 193V, NI-1230H-4S
RoHS: Compliant		78
  • 1:$405.8400
  • 5:$392.3100
Bild Teil # Beschreibung
MRFX600HR5

Mfr.#: MRFX600HR5

OMO.#: OMO-MRFX600HR5

 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
MRFX035HR5

Mfr.#: MRFX035HR5

OMO.#: OMO-MRFX035HR5

 RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V
MRF1K50HR5

Mfr.#: MRF1K50HR5

OMO.#: OMO-MRF1K50HR5

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
LTC1046CN8#PBF

Mfr.#: LTC1046CN8#PBF

OMO.#: OMO-LTC1046CN8-PBF

 Switching Voltage Regulators Switched Cap Volt Conv 50mA
132201

Mfr.#: 132201

OMO.#: OMO-132201

 RF Connectors / Coaxial Connectors SMA R/A PLUG .141 STAINLESS STEEL NUT
MRFX600HR5

Mfr.#: MRFX600HR5

OMO.#: OMO-MRFX600HR5-NXP-SEMICONDUCTORS

 TRANS LDMOS 600W 400 MHZ 65V
MRFX035HR5

Mfr.#: MRFX035HR5

OMO.#: OMO-MRFX035HR5-NXP-SEMICONDUCTORS

 TRANS LDMOS 35W 512 MHZ 65V
2843000302

Mfr.#: 2843000302

OMO.#: OMO-2843000302-FAIR-RITE

 EMI/RFI Suppressors & Ferrites Ferrite Toroids / Ferrite Rings 43 Multi-Aperture Core Z=130 @100MHz
2861010002

Mfr.#: 2861010002

OMO.#: OMO-2861010002-FAIR-RITE

 EMI/RFI Suppressors & Ferrites Ferrite Toroids / Ferrite Rings 61 MULIT APERTURE 625ohm@250MHZ
132201

Mfr.#: 132201

OMO.#: OMO-132201-AMPHENOL-RF

 Conn SMA PL 0Hz to 18GHz 50Ohm Solder RA Cable Mount Gold
Verfügbarkeit
Aktie:
56
Auf Bestellung:
2039
Menge eingeben:
Der aktuelle Preis von MRFX1K80HR5 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
248,42 $
248,42 $
5
243,18 $
1 215,90 $
10
237,92 $
2 379,20 $
25
231,92 $
5 798,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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