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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| RF1S50N06LESM | Harris Semiconductor | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 1705 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: RF1S50N06 OMO.#: OMO-RF1S50N06-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S50N06 LESM OMO.#: OMO-RF1S50N06-LESM-1190 |
Neu und Original |
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Mfr.#: RF1S50N06LESM OMO.#: OMO-RF1S50N06LESM-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
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Mfr.#: RF1S50N06LSM OMO.#: OMO-RF1S50N06LSM-1190 |
Neu und Original |
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Mfr.#: RF1S50N06LSM9A OMO.#: OMO-RF1S50N06LSM9A-1190 |
Neu und Original |
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Mfr.#: RF1S50N06SM OMO.#: OMO-RF1S50N06SM-1190 |
Neu und Original |
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Mfr.#: RF1S50N06SM9A OMO.#: OMO-RF1S50N06SM9A-1190 |
Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |