STGF30M65DF2

STGF30M65DF2
Mfr. #:
STGF30M65DF2
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGF30M65DF2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGF30M65DF2 Mehr Informationen STGF30M65DF2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220FP-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.55 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
60 A
Pd - Verlustleistung:
38 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGF30M65DF2
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
+/- 250 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Gewichtseinheit:
0.068784 oz
Tags
STGF30, STGF3, STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
STGF30M65DF2: 650 V 60 A 38 W Trench Gate Field-Stop M Series IGBT - TO-220-3
***ical
Trans IGBT Chip N-CH 650V 60A 38000mW 3-Pin(3+Tab) TO-220FP Tube
***ment14 APAC
IGBT, 650V, 60A, 175DEG C, 38W;
STM 650V M Series Trench Gate Field-Stop IGBTs
STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.
Teil # Mfg. Beschreibung Aktie Preis
STGF30M65DF2
DISTI # 33147918
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 30 A LOW LOSS1000
  • 1000:$1.8133
STGF30M65DF2
DISTI # 33635355
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 30 A LOW LOSS1000
  • 5:$3.0437
STGF30M65DF2
DISTI # 497-19151-ND
STMicroelectronicsIGBT TRENCH 650V 60A TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube
50In Stock
  • 5000:$1.3300
  • 2500:$1.3466
  • 500:$1.7456
  • 100:$2.1247
  • 50:$2.4938
  • 10:$2.6430
  • 1:$2.9400
STGF30M65DF2
DISTI # V99:2348_17693861
STMicroelectronicsTRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 30 A LOW LOSS1000
  • 2500:$1.2860
  • 1000:$1.3360
  • 500:$1.5899
  • 100:$1.8360
  • 50:$2.3090
  • 10:$2.3330
  • 1:$3.0437
STGF30M65DF2
DISTI # STGF30M65DF2
STMicroelectronicsTrans IGBT Chip N 650V 60A 3-Pin TO-220FP Tube - Rail/Tube (Alt: STGF30M65DF2)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 3000:$1.1900
  • 5000:$1.1900
  • 10000:$1.1900
  • 2000:$1.2900
  • 1000:$1.3900
STGF30M65DF2
DISTI # 20AC4202
STMicroelectronicsPTD HIGH VOLTAGE0
  • 1:$1.1900
STGF30M65DF2
DISTI # 511-STGF30M65DF2
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT M series, 650 V 30 A low loss
RoHS: Compliant
1961
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.9000
  • 500:$1.6600
  • 1000:$1.3700
STGF30M65DF2STMicroelectronicsTrench gate field-stop IGBT M series, 650 V 30 A low loss
RoHS: Compliant
1000Tube
  • 1000:$1.3000
STGF30M65DF2
DISTI # XSFP00000176148
STMicroelectronicsTrench gate field-stop IGBT M series, 650 V 30 Alow loss
RoHS: Compliant
2000 in Stock0 on Order
  • 2000:$2.3600
  • 1000:$2.6000
Bild Teil # Beschreibung
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IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
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OMO.#: OMO-STGF10M65DF2

IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss
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Mfr.#: STGWT40HP65FB

OMO.#: OMO-STGWT40HP65FB

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OMO.#: OMO-FGA20S125P-SN00336

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Mfr.#: CSD18540Q5B

OMO.#: OMO-CSD18540Q5B

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MSP430F425AIPMR

Mfr.#: MSP430F425AIPMR

OMO.#: OMO-MSP430F425AIPMR

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LF33ABDT-TR

Mfr.#: LF33ABDT-TR

OMO.#: OMO-LF33ABDT-TR

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LM2940IMP-10/NOPB

Mfr.#: LM2940IMP-10/NOPB

OMO.#: OMO-LM2940IMP-10-NOPB

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TPS79915DDCR

Mfr.#: TPS79915DDCR

OMO.#: OMO-TPS79915DDCR

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OPA2197IDR

Mfr.#: OPA2197IDR

OMO.#: OMO-OPA2197IDR

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von STGF30M65DF2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,79 $
2,79 $
10
2,37 $
23,70 $
100
1,90 $
190,00 $
500
1,66 $
830,00 $
1000
1,37 $
1 370,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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