OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXYH40N120C3D1

IXYH40N120C3D1
Mfr. #:
IXYH40N120C3D1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYH40N120C3D1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYH40N120C3D1 DatasheetIXYH40N120C3D1 Datasheet (P4-P6)IXYH40N120C3D1 Datasheet (P7)
ECAD Model:
Mehr Informationen:
IXYH40N120C3D1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247AD-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
4.8 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
64 A
Pd - Verlustleistung:
480 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
IXYH40N120
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
64 A
Marke:
IXYS
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Handelsname:
XPT
Gewichtseinheit:
1.340411 oz
Tags
IXYH40N1, IXYH4, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 64 A Flange Mount High-Speed IGBT - TO-247AD
***el Electronic
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
***i-Key
IGBT 1200V 64A 480W TO247
***trelec
IGBT, 1.2kV, 80A, TO-247AD
***S
new, original packaged
***el Nordic
Contact for details
***ure Electronics
IXYH30N120C3 - 1200 V 66 A High Speed XPT GenX3 IGBT Flange Mount - TO-247
***ical
Trans IGBT Chip N-CH 1.2KV 75A Automotive 3-Pin(3+Tab) TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ark
Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes
***i-Key
IGBT 1200V 75A 380W TO247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***S
new, original packaged
***el Nordic
Contact for details
***(Formerly Allied Electronics)
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
***p One Stop Global
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRG4PH50U Series N-Channel 1.2 kV 45 A Ultrafast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.78 V Current release time: 280 ns Power dissipation: 200 W
***ment14 APAC
SINGLE IGBT, 1.2KV, 45A; Transistor Type; Transistor Type:IGBT; DC Collector Current:45A; Collector Emitter Voltage Vces:3.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:45A; Current Temperature:25°C; Fall Time Max:500ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:180A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 45A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***eco
Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC
***ineon SCT
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***ure Electronics
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W
***nell
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IGBT Transistors 1200V/25 FAST IGBT FSII T
***i-Key
IGBT FIELD STOP 1200V 50A TO247
***ical
Trans IGBT Chip N=-CH 1200V 64A 417000mW 3-Pin(3+Tab) TO-247AB Tube
***ark
Igbt, 1.2Kv, 64A, 150Deg C, 417W Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES, N-Channel
***rchild Semiconductor
Employing NPT technology, Fairchild's AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS).
1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXYH40N120C3D1
DISTI # IXYH40N120C3D1-ND		IXYS CorporationIGBT 1200V 64A 480W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		51In Stock
  • 510:$7.6981
  • 270:$8.4430
  • 120:$9.1880
  • 30:$10.1813
  • 10:$11.1750
  • 1:$12.4200
IXYH40N120C3D1
DISTI # 747-IXYH40N120C3D1		IXYS CorporationIGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT60
  • 1:$12.4100
  • 10:$11.1800
  • 25:$10.1800
  • 50:$9.3000
  • 100:$9.1900
  • 250:$8.3700
  • 500:$7.7000
  • 1000:$6.7100
IXYH40N120C3D1
DISTI # IXYH40N120C3D1		IXYS Corporation1200V 64A 480W TO247AD
RoHS: Compliant		17
  • 1:€10.1500
  • 5:€7.1500
  • 30:€6.1500
  • 60:€5.9500
IXYH40N120C3D1
DISTI # XSFP00000012546		IXYS CorporationPower Field-Effect Transistor,3.6AI(D),40V,0.056ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-236AB
RoHS: Compliant		1822
  • 30:$11.8900
  • 1822:$11.1500
Bild Teil # Beschreibung
IR2214SSPBF

Mfr.#: IR2214SSPBF

OMO.#: OMO-IR2214SSPBF

 Gate Drivers 1200V HALF BRDG DRVR IC
ISO7340FCQDWRQ1

Mfr.#: ISO7340FCQDWRQ1

OMO.#: OMO-ISO7340FCQDWRQ1

 Digital Isolators Auto device of ISO7340FC
MM3Z11VST1G

Mfr.#: MM3Z11VST1G

OMO.#: OMO-MM3Z11VST1G

 Zener Diodes SOD-323 COPPER PB FR
PB3506-E3/45

Mfr.#: PB3506-E3/45

OMO.#: OMO-PB3506-E3-45

 Bridge Rectifiers 35 Amp 600 Volt Enhanced Power
IKW40N120CS6XKSA1

Mfr.#: IKW40N120CS6XKSA1

OMO.#: OMO-IKW40N120CS6XKSA1

 IGBT Transistors INDUSTRY 14
IKY75N120CH3XKSA1

Mfr.#: IKY75N120CH3XKSA1

OMO.#: OMO-IKY75N120CH3XKSA1

 IGBT Transistors
IKW40N120H3

Mfr.#: IKW40N120H3

OMO.#: OMO-IKW40N120H3

 IGBT Transistors IGBT PRODUCTS
IGW40N120H3

Mfr.#: IGW40N120H3

OMO.#: OMO-IGW40N120H3

 IGBT Transistors IGBT PRODUCTS
IRLB8314PBF

Mfr.#: IRLB8314PBF

OMO.#: OMO-IRLB8314PBF

 MOSFET TRENCH_MOSFETS
B65811J0100A087

Mfr.#: B65811J0100A087

OMO.#: OMO-B65811J0100A087

 Ferrite Cores & Accessories RM8 N87 100 +3%-3%
Verfügbarkeit
Aktie:
35
Auf Bestellung:
2018
Menge eingeben:
Der aktuelle Preis von IXYH40N120C3D1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
12,41 $
12,41 $
10
11,18 $
111,80 $
25
10,18 $
254,50 $
50
9,30 $
465,00 $
100
9,19 $
919,00 $
250
8,37 $
2 092,50 $
500
7,70 $
3 850,00 $
1000
6,71 $
6 710,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top