IGW30N100TFKSA1

IGW30N100TFKSA1
Mfr. #:
IGW30N100TFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IGW30N100TFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1000 V
Kollektor-Emitter-Sättigungsspannung:
1.8 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
60 A
Pd - Verlustleistung:
412 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
TRENCHSTOP IGBT
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
30 A
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
600 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IGW30N100T IGW3N1TXK SP000380845
Gewichtseinheit:
0.014110 oz
Tags
IGW30N1, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube
***ark
TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes
***ineon
InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications
Teil # Mfg. Beschreibung Aktie Preis
IGW30N100TFKSA1
DISTI # V99:2348_06378671
Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
244
  • 100:$3.9750
  • 10:$4.6210
  • 1:$6.0313
IGW30N100TFKSA1
DISTI # IGW30N100TFKSA1-ND
Infineon Technologies AGIGBT 1000V 60A 412W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube
Limited Supply - Call
    IGW30N100TFKSA1
    DISTI # 26197476
    Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    244
    • 3:$6.0313
    IGW30N100TFKSA1
    DISTI # 13AC9000
    Infineon Technologies AGTRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes0
      IGW30N100T
      DISTI # 726-IGW30N100T
      Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant
      153
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1
      DISTI # 726-IGW30N100TFKSA1
      Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant
      118
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant
      69
      • 1000:$2.3700
      • 500:$2.4900
      • 100:$2.6000
      • 25:$2.7100
      • 1:$2.9200
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      Menge eingeben:
      Der aktuelle Preis von IGW30N100TFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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