MRF8P29300HSR6

MRF8P29300HSR6
Mfr. #:
MRF8P29300HSR6
Hersteller:
NXP Semiconductors
Beschreibung:
FET RF 2CH 65V 2.9GHZ NI1230S
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MRF8P29300HSR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
MRF8P29300HSR6 Mehr Informationen MRF8P29300HSR6 Product Details
Produkteigenschaft
Attributwert
Hersteller
NXP / Freescale
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
MRF8P29300H
Verpackung
Spule
Gewichtseinheit
0.300472 oz
Montageart
SMD/SMT
Paket-Koffer
NI-1230S
Technologie
Si
Gewinnen
13.3 dB at 2.9 GHz
Ausgangsleistung
320 W at Peak
Maximale-Betriebstemperatur
+ 150 C
Arbeitsfrequenz
2.7 GHz to 2.9 GHz
Vgs-Gate-Source-Spannung
10 V
Vds-Drain-Source-Breakdown-Voltage
65 V
Vgs-th-Gate-Source-Threshold-Voltage
1.9 V
Transistor-Polarität
N-Kanal
Tags
MRF8P29, MRF8P2, MRF8P, MRF8, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
***W
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1829
***et
Trans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 65V 2.9GHZ NI1230S
***ark
HV8 300W 50V NI1230S
Teil # Mfg. Beschreibung Aktie Preis
MRF8P29300HSR6
DISTI # MRF8P29300HSR6-ND
NXP SemiconductorsFET RF 2CH 65V 2.9GHZ NI1230S
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$361.3711
MRF8P29300HSR6
DISTI # MRF8P29300HSR6
NXP SemiconductorsTrans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R - Tape and Reel (Alt: MRF8P29300HSR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 150:$395.9900
  • 300:$380.4900
  • 600:$365.5900
  • 900:$352.3900
  • 1500:$345.5900
MRF8P29300HSR6
DISTI # 841-MRF8P29300HSR6
NXP SemiconductorsRF MOSFET Transistors HV8 300W 50V NI1230S
RoHS: Compliant
0
  • 150:$347.8100
MRF8P29300HSR6
DISTI # MRF8P29300HSR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 150:$380.3900
Bild Teil # Beschreibung
MRF8P29300HR6

Mfr.#: MRF8P29300HR6

OMO.#: OMO-MRF8P29300HR6

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HSR6

Mfr.#: MRF8P29300HSR6

OMO.#: OMO-MRF8P29300HSR6

RF MOSFET Transistors HV8 300W 50V NI1230S
MRF8P29300HR5

Mfr.#: MRF8P29300HR5

OMO.#: OMO-MRF8P29300HR5

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HR5

Mfr.#: MRF8P29300HR5

OMO.#: OMO-MRF8P29300HR5-NXP-SEMICONDUCTORS

FET RF 2CH 65V 2.9GHZ NI1230
MRF8P29300HR6

Mfr.#: MRF8P29300HR6

OMO.#: OMO-MRF8P29300HR6-NXP-SEMICONDUCTORS

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HSR6

Mfr.#: MRF8P29300HSR6

OMO.#: OMO-MRF8P29300HSR6-NXP-SEMICONDUCTORS

FET RF 2CH 65V 2.9GHZ NI1230S
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von MRF8P29300HSR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
518,38 $
518,38 $
10
492,47 $
4 924,66 $
100
466,55 $
46 654,65 $
500
440,63 $
220 313,65 $
1000
414,71 $
414 708,00 $
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