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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| NESG3032M14-T3-A DISTI # 551-NESG3032M14-T3-A | California Eastern Laboratories (CEL) | RF Bipolar Transistors NPN Silicn Germanium Amp/Oscilltr RoHS: Compliant | 0 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: NESG3032M14-EVNF24 OMO.#: OMO-NESG3032M14-EVNF24 |
RF Bipolar Transistors Silicon Germanium Amp and Oscillator |
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Mfr.#: NESG3032M14-EVNF24 OMO.#: OMO-NESG3032M14-EVNF24-CEL |
RF Bipolar Transistors Silicon Germanium Amp and Oscillato |
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Mfr.#: NESG3032M14 OMO.#: OMO-NESG3032M14-1190 |
Neu und Original |
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Mfr.#: NESG3032M14-T13 OMO.#: OMO-NESG3032M14-T13-1190 |
Neu und Original |
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Mfr.#: NESG3032M14-T3 OMO.#: OMO-NESG3032M14-T3-1190 |
Neu und Original |
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Mfr.#: NESG3032M14-T3-A OMO.#: OMO-NESG3032M14-T3-A-1152 |
RF Bipolar Transistors NPN Silicn Germanium Amp/Oscillt |