IXFN102N30P

IXFN102N30P
Mfr. #:
IXFN102N30P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 102 Amps 300V 0.033 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN102N30P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN102N30P DatasheetIXFN102N30P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFN102N30P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
300 V
Id - Kontinuierlicher Drainstrom:
86 A
Rds On - Drain-Source-Widerstand:
33 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
224 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
570 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
12.22 mm
Länge:
38.23 mm
Serie:
IXFN102N30
Transistortyp:
1 N-Channel
Typ:
PolarHV HiPerFET Leistungs-MOSFET
Breite:
25.42 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
45 S
Abfallzeit:
30 ns
Produktart:
MOSFET
Anstiegszeit:
28 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
130 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN10, IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B
***nell
MOSFET MODULE, N-CH, 300V, 86A, SOT-227; Transistor Polarity: N Channel; Continuous Drain Current Id: 86A; Drain Source Voltage Vds: 300V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power Dissipation Pd: 570W; Operating Temperature Max: 150°C; Product Range: PolarHV HiPerFET Series; SVHC: No SVHC (12-Jan-2017)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 86 / Drain-Source Voltage (Vds) V = 300 / ON Resistance (Rds(on)) mOhm = 33 / Gate-Source Threshold Voltage V = 5 / Gate-Source Voltage V = 20 / Power Dissipation (Pd) W = 570 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Fall Time ns = 30 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 130 / Turn-ON Delay Time ns = 30 / Package Type = SOT-227B / Mounting Type = SMD / Packaging = Tube
***ark
Bipolar (BJT) Single Transistor, Darlington, NPN, 300 V, 225 W, 100 A, 300 RoHS Compliant: Yes
***r Electronics
Power Bipolar Transistor, 100A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
***ical
Trans Darlington NPN 300V 100A 225000mW 4-Pin ISOTOP Tube
***ronik
NPN-TRANSISTOR 300V 100A ISOTOP RoHSconf
***ment14 APAC
DARLINGTON Transistor, SOT-227; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency ft:-; Power Dissipation
***nell
TRANSISTOR, DARLINGTON SOT-227; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transistor Case Style: SOT-227; MSL: -; SVHC: No SVHC (17-Dec-2015); Av Current Ic: 100A; Continuous Collector Current Ic Max:
***ource
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***el Electronic
Trans IGBT Chip N-CH 600V 96A 4-Pin SOT-227 Rail
***et
PWR IGBT 39A,600V,SMPS N-CH W/DIODE TO-227
***DA Technology Co., Ltd.
Product Description Demo for Development.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFN102N30P
DISTI # V36:1790_15877021
IXYS CorporationTrans MOSFET N-CH 300V 86A 4-Pin SOT-227B
RoHS: Compliant
0
  • 10000:$11.3000
  • 5000:$11.3100
  • 1000:$13.2400
  • 100:$17.8500
  • 10:$18.7000
IXFN102N30P
DISTI # IXFN102N30P-ND
IXYS CorporationMOSFET N-CH 300V 88A SOT227B
RoHS: Compliant
Min Qty: 10
Container: Box
Temporarily Out of Stock
  • 10:$19.3800
IXFN102N30P
DISTI # 747-IXFN102N30P
IXYS CorporationMOSFET 102 Amps 300V 0.033 Rds
RoHS: Compliant
30
  • 1:$24.5100
  • 10:$22.2900
  • 20:$20.6100
  • 50:$18.9600
  • 100:$18.5000
  • 200:$16.9600
  • 500:$15.3900
IXFN102N30P
DISTI # 193464P
IXYS CorporationMOSFET N-CHANNEL 300V 86A SOT227B, TU25
  • 100:£12.8300
  • 50:£13.0900
  • 20:£13.5600
  • 5:£14.1900
IXFN102N30P
DISTI # 193464
IXYS CorporationMOSFET N-CHANNEL 300V 86A SOT227B, EA11
  • 100:£12.8300
  • 50:£13.0900
  • 20:£13.5600
  • 5:£14.1900
  • 1:£15.7700
IXFN102N30P
DISTI # 2674759
IXYS CorporationMOSFET MODULE, N-CH, 300V, 86A, SOT-227
RoHS: Compliant
2
  • 500:$21.6900
  • 250:$22.3700
  • 100:$23.1600
  • 10:$24.4800
  • 1:$24.9500
IXFN102N30P
DISTI # 2674759
IXYS CorporationMOSFET MODULE, N-CH, 300V, 86A, SOT-227
RoHS: Compliant
3
  • 100:£12.9400
  • 50:£14.4700
  • 10:£15.1600
  • 5:£16.9300
  • 1:£18.7000
Bild Teil # Beschreibung
TSM103WAIDT

Mfr.#: TSM103WAIDT

OMO.#: OMO-TSM103WAIDT

Operational Amplifiers - Op Amps Dual Op Amp Vltg Ref
ICE2PCS01G

Mfr.#: ICE2PCS01G

OMO.#: OMO-ICE2PCS01G

Power Factor Correction - PFC STAND ALONE PFC CCM W/BROWN OUT
LNK302DN

Mfr.#: LNK302DN

OMO.#: OMO-LNK302DN

AC/DC Converters 63 mA (MDCM) 80 mA (CCM)
VIPER12ASTR-E

Mfr.#: VIPER12ASTR-E

OMO.#: OMO-VIPER12ASTR-E

AC/DC Converters Low Power OFF-Line SMPS Primary Switch
UC3851N

Mfr.#: UC3851N

OMO.#: OMO-UC3851N

AC/DC Converters Prog Off-Line PWM Controller
CS19-12HO1

Mfr.#: CS19-12HO1

OMO.#: OMO-CS19-12HO1

SCRs 19 Amps 1200V
AC0805FR-072K32L

Mfr.#: AC0805FR-072K32L

OMO.#: OMO-AC0805FR-072K32L

Thick Film Resistors - SMD AEC-Q200
ICE2PCS01G

Mfr.#: ICE2PCS01G

OMO.#: OMO-ICE2PCS01G-584

Power Factor Correction - PFC STAND ALONE PFC CCM W/BROWN OUT
TSM103WAIDT

Mfr.#: TSM103WAIDT

OMO.#: OMO-TSM103WAIDT-STMICROELECTRONICS

IC OPAMP GP 900KHZ 8SO
LNK302DN

Mfr.#: LNK302DN

OMO.#: OMO-LNK302DN-POWER-INTEGRATIONS

AC/DC Converters 63 mA (MDCM) 80 mA (CCM)
Verfügbarkeit
Aktie:
30
Auf Bestellung:
2013
Menge eingeben:
Der aktuelle Preis von IXFN102N30P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
24,51 $
24,51 $
10
22,29 $
222,90 $
20
20,61 $
412,20 $
50
18,96 $
948,00 $
100
18,50 $
1 850,00 $
200
16,96 $
3 392,00 $
500
15,39 $
7 695,00 $
Beginnen mit
Neueste Produkte
Top