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STGWT40H65DFB

STGWT40H65DFB
Mfr. #:
STGWT40H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT40H65DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT40H65DFB Mehr Informationen STGWT40H65DFB Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3P
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.6 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
283 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGWT40H65DFB
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
40 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
300
Unterkategorie:
IGBTs
Gewichtseinheit:
0.238311 oz
Tags
STGWT40H65, STGWT40H6, STGWT40H, STGWT4, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
STMicroelectronics STGWT40H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***ure Electronics
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
***p One Stop Japan
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 40A TO-3P
***i-Key
IGBT 650V 80A 283W TO3P-3L
***ark
Ptd High Voltage
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGWT40H65DFB
DISTI # V36:1790_06560827		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant		0
    STGWT40H65DFB
    DISTI # 497-14229-5-ND    		STMicroelectronicsIGBT 650V 80A 283W TO3P-3L
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		396In Stock
    • 2520:$2.1420
    • 510:$2.6668
    • 120:$3.1327
    • 30:$3.6147
    • 10:$3.8230
    • 1:$4.2600
    STGWT40H65DFB
    DISTI # STGWT40H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Europe - 0
    • 300:€1.7900
    • 180:€1.8900
    • 120:€1.9900
    • 60:€2.0900
    • 30:€2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 3000:$1.8900
    • 6000:$1.8900
    • 1800:$1.9900
    • 1200:$2.0900
    • 600:$2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB    		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Asia - 0
    • 30000:$1.4868
    • 15000:$1.5270
    • 6000:$1.5694
    • 3000:$1.6377
    • 1800:$1.7121
    • 1200:$1.7937
    • 600:$1.8833
    STGWT40H65DFB
    DISTI # 40X8766    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$1.9900
    • 250:$2.0500
    • 100:$2.4500
    • 50:$2.8300
    • 25:$3.0200
    • 10:$3.4500
    • 1:$3.9800
    STGWT40H65DFB
    DISTI # 511-STGWT40H65DFB    		STMicroelectronicsIGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
    RoHS: Compliant    		311
    • 1:$4.0500
    • 10:$3.4400
    • 100:$2.9800
    • 250:$2.8300
    • 500:$2.5400
    • 1000:$2.1400
    • 2500:$2.0300
    STGWT40H65DFB
    DISTI # 8294506P    		STMicroelectronicsIGBT TRENCH HB SERIES 650V 40A TO-3P, TU74
    • 10:£2.5000
    • 5:£2.7100
    STGWT40H65DFBSTMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant    		Europe - 720
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      Verfügbarkeit
      Aktie:
      309
      Auf Bestellung:
      2292
      Menge eingeben:
      Der aktuelle Preis von STGWT40H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,05 $
      4,05 $
      10
      3,44 $
      34,40 $
      100
      2,98 $
      298,00 $
      250
      2,83 $
      707,50 $
      500
      2,54 $
      1 270,00 $
      1000
      2,14 $
      2 140,00 $
      2500
      2,03 $
      5 075,00 $
      5000
      1,95 $
      9 750,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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