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FGH50T65UPD

FGH50T65UPD
Mfr. #:
FGH50T65UPD
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 650 V 100 A 240 W
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGH50T65UPD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGH50T65UPD Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.225401 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Leistung max
340W
Reverse-Recovery-Time-trr
53ns
Strom-Kollektor-Ic-Max
100A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
150A
Vce-on-Max-Vge-Ic
2.3V @ 15V, 50A
Schaltenergie
2.7mJ (on), 740μJ (off)
Gate-Gebühr
230nC
Td-ein-aus-25°C
32ns/160ns
Testbedingung
400V, 50A, 6 Ohm, 15V
Pd-Verlustleistung
240 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
2.1 V
Kontinuierlicher Kollektorstrom-bei-25-C
100 A
Gate-Emitter-Leckstrom
400 nA
Maximale Gate-Emitter-Spannung
25 V
Tags
FGH50T, FGH50, FGH5, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
Industrial Power Solutions
ON Semiconductor power semiconductors are clean energy enablers for a variety ofindustrial applications. ON Semiconductor offers IGBTs and MOSFETs featuringhigh current handling capability and low conduction and switching loss;optically isolated gate drivers with wide operating voltage range andhigh common-mode transient immunity; FPS™ controllers designed forhigh-performance power supplies with minimal external components;creative smart dual-coil relay drivers with integrated switches andwafer-level adjust capability for timing customization; and web-basedtools that eliminate tedious bench time and allow popular power supplydesigns to be completed in minutes, saving weeks of time. ON Semiconductorcombines power analog, power discrete and optoelectronic functionaltechnologies; unique combinations of these functions for novelintegrated solutions; and leading process and packing technologies thatreduce size, heat, and cost.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
FGHx0T65 650V Field Stop IGBTs
ON Semiconductor FGHx0T65 650V Field Stop IGBTs use innovative field stop trench IGBT technology. These IGBTs offer optimum performance. The FGHx0T65 IGBTs feature positive temperature coefficient for easy parallel operating, high current capability, high input impedance, and tightened parameter distribution. Typical applications include solar inverters, UPS, welders, and digital power generators that require low conduction and switching losses.
Teil # Mfg. Beschreibung Aktie Preis
FGH50T65UPD
DISTI # FGH50T65UPD-ND		ON SemiconductorIGBT 650V 100A 340W TO-247AB
RoHS: Compliant
Min Qty: 1
Container: Tube		872In Stock
  • 1350:$2.9640
  • 900:$3.4827
  • 450:$3.8618
  • 10:$4.9190
  • 1:$5.4600
FGH50T65UPD
DISTI # FGH50T65UPD		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH50T65UPD)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.8900
  • 900:$1.8900
  • 1800:$1.7900
  • 2700:$1.7900
  • 4500:$1.6900
FGH50T65UPD.
DISTI # 98AC1365		ON SemiconductorFS1TIGBT TO247 50A 650V ROHS COMPLIANT: YES0
    FGH50T65UPD
    DISTI # 512-FGH50T65UPD    		ON SemiconductorIGBT Transistors 650 V 100 A 240 W
    RoHS: Compliant    		359
    • 1:$5.0300
    • 10:$4.2700
    • 100:$3.7000
    • 250:$3.5100
    • 500:$3.1500
    • 1000:$2.6600
    • 2500:$2.5200
    FGH50T65UPDFairchild Semiconductor Corporation 
    RoHS: Not Compliant    		2975
    • 1000:$2.7800
    • 500:$2.9200
    • 100:$3.0400
    • 25:$3.1700
    • 1:$3.4200
    FGH50T65UPD
    DISTI # 8648874P    		ON SemiconductorIGBT 650V 50A FIELD STOP TRENCH TO247, TU40
    • 600:£2.3700
    • 300:£2.6400
    • 100:£2.7850
    • 10:£3.2200
    Bild Teil # Beschreibung
    FGH50T65SQD-F155

    Mfr.#: FGH50T65SQD-F155

    OMO.#: OMO-FGH50T65SQD-F155

    		 IGBT Transistors 650V FS4 Trench IGBT
    FGH50T65UPD

    Mfr.#: FGH50T65UPD

    OMO.#: OMO-FGH50T65UPD

    		 IGBT Transistors 650 V 100 A 240 W
    FGH50N3

    Mfr.#: FGH50N3

    OMO.#: OMO-FGH50N3-ON-SEMICONDUCTOR

    		 IGBT 300V 75A 463W TO247
    FGH50T65UPD

    Mfr.#: FGH50T65UPD

    OMO.#: OMO-FGH50T65UPD-ON-SEMICONDUCTOR

    		 IGBT Transistors 650 V 100 A 240 W
    FGH50N60S2D

    Mfr.#: FGH50N60S2D

    OMO.#: OMO-FGH50N60S2D-1190

    		 Neu und Original
    FGH50N6S2 ABU

    Mfr.#: FGH50N6S2 ABU

    OMO.#: OMO-FGH50N6S2-ABU-1190

    		 Neu und Original
    FGH50N6S2/D

    Mfr.#: FGH50N6S2/D

    OMO.#: OMO-FGH50N6S2-D-1190

    		 Neu und Original
    FGH50N6S2D AG

    Mfr.#: FGH50N6S2D AG

    OMO.#: OMO-FGH50N6S2D-AG-1190

    		 Neu und Original
    FGH50N6S2D,50N6S2D

    Mfr.#: FGH50N6S2D,50N6S2D

    OMO.#: OMO-FGH50N6S2D-50N6S2D-1190

    		 Neu und Original
    FGH50T65SQD

    Mfr.#: FGH50T65SQD

    OMO.#: OMO-FGH50T65SQD-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von FGH50T65UPD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    3,07 $
    3,07 $
    10
    2,92 $
    29,16 $
    100
    2,76 $
    276,21 $
    500
    2,61 $
    1 304,35 $
    1000
    2,46 $
    2 455,20 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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