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FDMS86350

FDMS86350
Mfr. #:
FDMS86350
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET FET 80V 2.4 MOHM PQFN56
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMS86350 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-56-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
80 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.8 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
110 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Handelsname:
PowerTrench Power Clip
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMS86350
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
34 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
50 ns
Gewichtseinheit:
0.001993 oz
Tags
FDMS863, FDMS86, FDMS8, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, N-Channel MOSFET, 130 A, 80 V, 8-Pin Power 56 ON Semiconductor FDMS86350
***Semiconductor
N-Channel PowerTrench® MOSFET 80V, 130A, 2.4mΩ
***ure Electronics
Single N-Channel 80 V 2.7 W 155 nC Silicon Surface Mount Mosfet - POWER 56-8
***p One Stop Japan
Trans MOSFET N-CH 80V 25A 8-Pin Power 56 EP T/R
***et
Trans MOSFET N-CH 80V 25A 8-Pin Power 56 T/R
***i-Key
MOSFET N-CH 80V 80A POWER56
***ark
TAPE REEL/PT7 80V/20V Nch Power Trench
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 80V, 130A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:130A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8V; Power Dissipation Pd:156W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
***nell
MOSFET, CA-N, 80V, 130A, POWER 56-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:130A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.002ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.8V; Dissipazione di Potenza Pd:156W; Modello Case Transistor:Power 56; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):Lead (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
FDMS86350
DISTI # V72:2272_06338206		ON SemiconductorPT7 80V/20V NCH POWER TRENCH3000
  • 3000:$2.0940
  • 1000:$2.1269
  • 500:$2.4610
  • 250:$2.8110
  • 100:$2.9459
  • 25:$3.0630
  • 10:$3.4030
  • 1:$4.4033
FDMS86350
DISTI # V36:1790_06338206		ON SemiconductorPT7 80V/20V NCH POWER TRENCH0
  • 3000000:$1.7710
  • 1500000:$1.7720
  • 300000:$1.8210
  • 30000:$1.8890
  • 3000:$1.9000
FDMS86350ET80
DISTI # V36:1790_06338207		ON SemiconductorPT7 80V/20V NCH POWER TRENCH0
  • 3000000:$1.6520
  • 1500000:$1.6540
  • 300000:$1.7440
  • 30000:$1.8810
  • 3000:$1.9030
FDMS86350ET80
DISTI # V72:2272_06338207		ON SemiconductorPT7 80V/20V NCH POWER TRENCH0
    FDMS86350
    DISTI # FDMS86350CT-ND    		ON SemiconductorMOSFET N-CH 80V 80A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		28755In Stock
    • 1000:$2.3014
    • 500:$2.7288
    • 100:$3.2056
    • 10:$3.9120
    • 1:$4.3600
    FDMS86350
    DISTI # FDMS86350DKR-ND    		ON SemiconductorMOSFET N-CH 80V 80A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		28755In Stock
    • 1000:$2.3014
    • 500:$2.7288
    • 100:$3.2056
    • 10:$3.9120
    • 1:$4.3600
    FDMS86350
    DISTI # FDMS86350TR-ND    		ON SemiconductorMOSFET N-CH 80V 80A POWER56
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		27000In Stock
    • 3000:$2.1227
    FDMS86350ET80
    DISTI # FDMS86350ET80CT-ND    		ON SemiconductorMOSFET N-CH 80V 80A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		5221In Stock
    • 1000:$2.0637
    • 500:$2.4470
    • 100:$2.8745
    • 10:$3.5080
    • 1:$3.9100
    FDMS86350ET80
    DISTI # FDMS86350ET80DKR-ND    		ON SemiconductorMOSFET N-CH 80V 80A POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		5221In Stock
    • 1000:$2.0637
    • 500:$2.4470
    • 100:$2.8745
    • 10:$3.5080
    • 1:$3.9100
    FDMS86350ET80
    DISTI # FDMS86350ET80TR-ND    		ON SemiconductorMOSFET N-CH 80V 80A POWER56
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		3000In Stock
    • 3000:$1.9034
    FDMS86350
    DISTI # 32892557    		ON SemiconductorPT7 80V/20V NCH POWER TRENCH6000
    • 3000:$2.0279
    FDMS86350
    DISTI # 33628496    		ON SemiconductorPT7 80V/20V NCH POWER TRENCH3000
    • 3:$4.4033
    FDMS86350
    DISTI # FDMS86350    		ON SemiconductorTrans MOSFET N-CH 80V 25A 8-Pin Power 56 T/R (Alt: FDMS86350)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€1.6900
    • 18000:€1.7900
    • 12000:€1.9900
    • 6000:€2.0900
    • 3000:€2.1900
    FDMS86350
    DISTI # FDMS86350    		ON SemiconductorTrans MOSFET N-CH 80V 25A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86350)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$1.7900
    • 3000:$1.8900
    • 6000:$1.8900
    • 12000:$1.8900
    • 18000:$1.8900
    FDMS86350ET80
    DISTI # FDMS86350ET80    		ON SemiconductorTrans MOSFET N-CH 80V 25A 8-Pin PQFN T/R (Alt: FDMS86350ET80)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€1.5900
    • 18000:€1.6900
    • 12000:€1.7900
    • 6000:€1.8900
    • 3000:€1.9900
    FDMS86350ET80
    DISTI # FDMS86350ET80    		ON SemiconductorTrans MOSFET N-CH 80V 25A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86350ET80)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$1.5900
    • 3000:$1.6900
    • 6000:$1.6900
    • 12000:$1.6900
    • 18000:$1.6900
    FDMS86350
    DISTI # 96W6426    		ON SemiconductorFET 80V 2.4 MOHM PQFN56 / REEL0
    • 30000:$1.8700
    • 18000:$1.9000
    • 12000:$1.9800
    • 6000:$2.1300
    • 3000:$2.2800
    • 1:$2.3900
    FDMS86350
    DISTI # 46AC0801    		ON SemiconductorMOSFET, N-CH, 80V, 130A, POWER 56-8,Transistor Polarity:N Channel,Continuous Drain Current Id:130A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,Power RoHS Compliant: Yes5980
    • 1000:$2.1500
    • 500:$2.5600
    • 250:$2.8500
    • 100:$3.0000
    • 50:$3.1500
    • 25:$3.3000
    • 10:$3.4500
    • 1:$4.0700
    FDMS86350
    DISTI # 512-FDMS86350    		ON SemiconductorMOSFET FET 80V 2.4 MOHM PQFN56
    RoHS: Compliant    		8750
    • 1:$4.0300
    • 10:$3.4200
    • 100:$2.9700
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1300
    • 3000:$2.0300
    FDMS86350ET80
    DISTI # 512-FDMS86350ET80    		ON SemiconductorMOSFET FET 80V 2.4 MOHM PQFN56
    RoHS: Compliant    		7699
    • 1:$3.6100
    • 10:$3.0700
    • 100:$2.6600
    • 250:$2.5300
    • 500:$2.2700
    • 1000:$1.9100
    • 3000:$1.8200
    FDMS86350
    DISTI # 8648483P    		ON SemiconductorMOSFET N-CH 80V 130A POWERTRENCH PQFN8, RL3000
    • 20:£2.2550
    FDMS86350
    DISTI # 2825180    		ON SemiconductorMOSFET, N-CH, 80V, 130A, POWER 56-8
    RoHS: Compliant    		11980
    • 1000:$3.0900
    • 500:$3.4200
    • 250:$3.9000
    • 100:$4.3300
    • 10:$4.9900
    • 1:$5.7300
    FDMS86350
    DISTI # 2825180    		ON SemiconductorMOSFET, N-CH, 80V, 130A, POWER 56-811978
    • 500:£1.9300
    • 250:£2.1500
    • 100:£2.2600
    • 10:£2.6100
    • 1:£3.4500
    FDMS86350
    DISTI # XSKDRABV0049636    		ON SEMICONDUCTOR 
    RoHS: Compliant    		6000 in Stock0 on Order
    • 6000:$2.8400
    • 3000:$3.0400
    Bild Teil # Beschreibung
    ADG433BRZ-REEL

    Mfr.#: ADG433BRZ-REEL

    OMO.#: OMO-ADG433BRZ-REEL

    		 Analog Switch ICs LC2MOS Precision Quad SPST
    ADG433BRZ-REEL

    Mfr.#: ADG433BRZ-REEL

    OMO.#: OMO-ADG433BRZ-REEL-ANALOG-DEVICES

    		 Analog Switch ICs LC2MOS Precision Quad SPST
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1991
    Menge eingeben:
    Der aktuelle Preis von FDMS86350 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,03 $
    4,03 $
    10
    3,42 $
    34,20 $
    100
    2,97 $
    297,00 $
    250
    2,82 $
    705,00 $
    500
    2,53 $
    1 265,00 $
    1000
    2,13 $
    2 130,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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