SSM3K56ACT,L3F

SSM3K56ACT,L3F
Mfr. #:
SSM3K56ACT,L3F
Hersteller:
Toshiba
Beschreibung:
MOSFET Small-signal MOSFET ID: 1.4A, VDSS: 20V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SSM3K56ACT,L3F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SSM3K56ACT,L3F DatasheetSSM3K56ACT,L3F Datasheet (P4-P6)SSM3K56ACT,L3F Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SSM3K56ACT,L3F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
CST3-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
1.4 A
Rds On - Drain-Source-Widerstand:
840 mOhms
Vgs th - Gate-Source-Schwellenspannung:
400 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
1 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
500 mW (1/2 W)
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.38 mm
Länge:
1 mm
Serie:
SSM3K56
Transistortyp:
1 N-Channel
Breite:
0.6 mm
Marke:
Toshiba
Vorwärtstranskonduktanz - Min:
1.4 S
Produktart:
MOSFET
Werkspackungsmenge:
10000
Unterkategorie:
MOSFETs
Tags
SSM3K56, SSM3K5, SSM3K, SSM3, SSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 1.4A 3-Pin SOT-883 Embossed T/R
***i-Key
MOSFET N-CH 20V 1.4A CST3
***
N-CHL RDSON=.0186OHM VDSSS=20V
U-MOS VI Small Signal MOSFETs
Toshiba U-MOS VI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. Offered in single, dual, n-channel, p-channel and various voltage versions, they offer a wide variety of options for the design engineer. Each address the need to support high-current charging with low voltage and low RDS(on) requirements. These compact packages and and low voltage operation make them ideal solutions for high-density packaging requirements in smart phones and game consoles.
SSM3 High Current MOSFETs
Toshiba SSM3 High Current MOSFETs provide a high drain current rating, low capacitance, low on-resistance, and fast switching. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) are semiconductor devices used for switching and amplifying electronic signals in electronic devices. Applications include mobile devices (wearable device, smart phone, tablet PC, etc.), load switches, DC-DC converters, and general purpose switches. 
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Verfügbarkeit
Aktie:
20
Auf Bestellung:
2003
Menge eingeben:
Der aktuelle Preis von SSM3K56ACT,L3F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,55 $
0,55 $
10
0,30 $
3,03 $
100
0,13 $
13,00 $
1000
0,10 $
100,00 $
2500
0,08 $
190,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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