FQU2N60CTU

FQU2N60CTU
Mfr. #:
FQU2N60CTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 600V N-Channel Adv Q-FET C-Series
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FQU2N60CTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
1.9 A
Rds On - Drain-Source-Widerstand:
4.7 Ohms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
6.3 mm
Länge:
6.8 mm
Serie:
FQU2N60C
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
2.5 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
5 S
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
5040
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
9 ns
Gewichtseinheit:
0.012102 oz
Tags
FQU2N60C, FQU2N60, FQU2N6, FQU2N, FQU2, FQU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 1.9 A, 600 V, 3-Pin IPAK ON Semiconductor FQU2N60CTU
***Semiconductor
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK
***itex
Transistor N-MOSFET FQU2N60CTU, IPAK, Fairchild
***ure Electronics
N-Channel 600 V 4.7 Ohm Through Hole Power Mosfet - IPAK-3
***p One Stop Global
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
***ser
MOSFETs 600V N-Channel Adv Q-FET C-Series
*** Source Electronics
MOSFET N-CH 600V 1.9A IPAK
***ark
Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; Operating Temperature Max:150�C; Product Range:QFET Series; Automotive Qualification Standard:-; MSL:- RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Teil # Mfg. Beschreibung Aktie Preis
FQU2N60CTU
DISTI # 33614281
ON SemiconductorQFC 600V 4.7OHM IPAK3498
  • 33:$0.3107
FQU2N60CTU
DISTI # FQU2N60CTU-ND
ON SemiconductorMOSFET N-CH 600V 1.9A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube
37In Stock
  • 5000:$0.3670
  • 2500:$0.3863
  • 500:$0.5243
  • 100:$0.6347
  • 25:$0.7728
  • 10:$0.8140
  • 1:$0.9100
FQU2N60CTU
DISTI # V36:1790_06359742
ON SemiconductorQFC 600V 4.7OHM IPAK0
  • 5040000:$0.2706
  • 2520000:$0.2714
  • 504000:$0.4406
  • 50400:$0.8375
  • 5040:$0.9100
FQU2N60CTU
DISTI # FQU2N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 5040
Container: Tube
Americas - 430
  • 50400:$0.2949
  • 30240:$0.3019
  • 20160:$0.3059
  • 10080:$0.3099
  • 5040:$0.3119
FQU2N60CTU
DISTI # FQU2N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail - Bulk (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 834
Container: Bulk
Americas - 0
  • 8340:$0.3699
  • 4170:$0.3789
  • 2502:$0.3839
  • 1668:$0.3889
  • 834:$0.3919
FQU2N60CTU
DISTI # FQU2N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€0.2829
  • 500:€0.3049
  • 100:€0.3309
  • 50:€0.3609
  • 25:€0.3969
  • 10:€0.4409
  • 1:€0.4959
FQU2N60CTU
DISTI # FQU2N60CTU
ON SemiconductorTrans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Rail (Alt: FQU2N60CTU)
RoHS: Compliant
Min Qty: 5040
Asia - 0
  • 252000:$0.3746
  • 126000:$0.3808
  • 50400:$0.3940
  • 25200:$0.4080
  • 15120:$0.4232
  • 10080:$0.4394
  • 5040:$0.4570
FQU2N60CTU.
DISTI # 60AC9683
ON SemiconductorContinuous Drain Current Id:1.9A,Drain Source Voltage Vds:600V,Operating Temperature Max:150°C,Product Range:QFET Series,Automotive Qualification Standard:-,MSL:- RoHS Compliant: Yes0
  • 50400:$0.2860
  • 30240:$0.2940
  • 20160:$0.2970
  • 10080:$0.3010
  • 1:$0.3030
FQU2N60CTU
DISTI # 512-FQU2N60CTU
ON SemiconductorMOSFET 600V N-Channel Adv Q-FET C-Series
RoHS: Compliant
4617
  • 1:$0.9300
  • 10:$0.7990
  • 100:$0.6140
  • 500:$0.5430
  • 1000:$0.4290
  • 2500:$0.3800
  • 10000:$0.3660
FQU2N60CTUFairchild Semiconductor CorporationPower Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
42125
  • 1000:$0.3400
  • 500:$0.3600
  • 100:$0.3800
  • 25:$0.3900
  • 1:$0.4200
FQU2N60CTU
DISTI # 6715357
ON SemiconductorMOSFET N-CHANNEL 600V 1.9A IPAK, PK80
  • 250:£0.4020
  • 100:£0.4360
  • 25:£0.4740
  • 5:£0.5160
Bild Teil # Beschreibung
L6388ED

Mfr.#: L6388ED

OMO.#: OMO-L6388ED

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MAX3053ESA+

Mfr.#: MAX3053ESA+

OMO.#: OMO-MAX3053ESA-

CAN Interface IC 80V Fault-Protected 2Mbps
STGW39NC60VD

Mfr.#: STGW39NC60VD

OMO.#: OMO-STGW39NC60VD

IGBT Transistors N-CHANNEL MFT
nRF9160-SICA-R7

Mfr.#: nRF9160-SICA-R7

OMO.#: OMO-NRF9160-SICA-R7

RF System on a Chip - SoC SIP Module LTE-M and NB-IOT
P8X32A-Q44

Mfr.#: P8X32A-Q44

OMO.#: OMO-P8X32A-Q44

32-bit Microcontrollers - MCU LQFP pkg Propeller Chip
LM1085IT-ADJ/NOPB

Mfr.#: LM1085IT-ADJ/NOPB

OMO.#: OMO-LM1085IT-ADJ-NOPB

LDO Voltage Regulators 3A LDO POS REG
MPX2102ASX

Mfr.#: MPX2102ASX

OMO.#: OMO-MPX2102ASX

Board Mount Pressure Sensors UNIBODY COMPENSATED
STGW39NC60VD

Mfr.#: STGW39NC60VD

OMO.#: OMO-STGW39NC60VD-STMICROELECTRONICS

IGBT 600V 80A 250W TO247
L6388ED

Mfr.#: L6388ED

OMO.#: OMO-L6388ED-STMICROELECTRONICS

Gate Drivers Hi-Vltg and Lo Side Drive
LM1085IT-ADJ/NOPB

Mfr.#: LM1085IT-ADJ/NOPB

OMO.#: OMO-LM1085IT-ADJ-NOPB-TEXAS-INSTRUMENTS

IC REG LINEAR POS ADJ 3A TO220-3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von FQU2N60CTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,86 $
0,86 $
10
0,74 $
7,35 $
100
0,56 $
56,50 $
500
0,50 $
249,50 $
1000
0,39 $
394,00 $
2500
0,35 $
872,50 $
10000
0,34 $
3 360,00 $
25000
0,32 $
8 125,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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