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BSP613P L6327

BSP613P L6327
Mfr. #:
BSP613P L6327
Hersteller:
Infineon Technologies AG
Beschreibung:
MOSFET P-Ch -60V 2.9A SOT-223-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSP613P L6327 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
BSP613PL, BSP613P, BSP613, BSP61, BSP6, BSP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans MOSFET P-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, P-CH, 60V, 2.9A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.9A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***et
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R
***el Electronic
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
***i-Key
SMALL-SIGNAL N-CHANNEL MOSFET
***S
new, original packaged
***ical
Trans MOSFET N-CH 60V 1.8A Automotive 4-Pin(3+Tab) SOT-223 T/R
***el Electronic
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
***ark
MOSFET, N, LOGIC, REEL 1K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:1.7A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.1V; Case Style:SOT-223; ;RoHS Compliant: Yes
***nell
MOSFET, N, LOGIC, REEL 1K; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.1V; Power Dissipation Pd: 1.8W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 1.8A; Current Temperature: 25°C; External Depth: 7.3mm; External Length / Height: 1.7mm; External Width: 6.7mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 1.8W; Pulse Current Idm: 6.8A; Reel Quantity: 1000; SMD Marking: BSP 295; Tape Width: 12mm; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2V
***ineon SCT
55V, N-Ch, 33 mΩ max, Automotive MOSFET, SOT-223, OptiMOS™, PG-SOT223-4-4-4, RoHS
***ical
Trans MOSFET N-CH 55V 5.2A Automotive 4-Pin(3+Tab) SOT-223 T/R
***ure Electronics
Single N-Channel 55 V 33 mOhm 31 nC OptiMOS™ Small Signal Mosfet - SOT-223
***ineon
Summary of Features: N-Channel; Enhancements mode; Logic level; Green Product (RoHS Compliant); AEC Qualified | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Teil # Mfg. Beschreibung Aktie Preis
BSP613PL6327HUSA1
DISTI # BSP613PL6327HUSA1TR-ND		Infineon Technologies AGMOSFET P-CH 60V 2.9A SOT-223
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSP613PL6327HUSA1
    DISTI # BSP613PL6327HUSA1CT-ND    		Infineon Technologies AGMOSFET P-CH 60V 2.9A SOT-223
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSP613PL6327HUSA1
      DISTI # BSP613PL6327HUSA1DKR-ND      		Infineon Technologies AGMOSFET P-CH 60V 2.9A SOT-223
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSP613P L6327
        DISTI # 726-BSP613PL6327        		Infineon Technologies AGMOSFET P-Ch -60V 2.9A SOT-223-3
        RoHS: Compliant        		0
          BSP613PL6327Infineon Technologies AGPower Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
          RoHS: Compliant          		15
          • 1000:$0.3600
          • 500:$0.3700
          • 100:$0.3900
          • 25:$0.4100
          • 1:$0.4400
          BSP613PL6327Siemens2.9 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET240
          • 168:$0.2520
          • 38:$0.3600
          • 1:$0.7200
          BSP613PL6327Infineon Technologies AG2.9 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET160
          • 38:$0.3600
          • 8:$0.5400
          • 1:$0.7200
          BSP613PL6327HUSA1Infineon Technologies AGPOWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 60V, 0.13OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET500
            BSP613PL6327Infineon Technologies AGPower Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
            RoHS: Compliant            		1000
              Bild Teil # Beschreibung
              BSP613P H6327

              Mfr.#: BSP613P H6327

              OMO.#: OMO-BSP613P-H6327

              		 MOSFET P-Ch -60V -2.9A SOT-223-3
              BSP613P

              Mfr.#: BSP613P

              OMO.#: OMO-BSP613P-INFINEON-TECHNOLOGIES

              		 MOSFET P-CH 60V 2.9A SOT-223
              BSP613P E6327

              Mfr.#: BSP613P E6327

              OMO.#: OMO-BSP613P-E6327-1190

              		 Neu und Original
              BSP613P H6327XTSA

              Mfr.#: BSP613P H6327XTSA

              OMO.#: OMO-BSP613P-H6327XTSA-1190

              		 Neu und Original
              BSP613P L6327

              Mfr.#: BSP613P L6327

              OMO.#: OMO-BSP613P-L6327-1190

              		 MOSFET P-Ch -60V 2.9A SOT-223-3
              BSP613PH6327

              Mfr.#: BSP613PH6327

              OMO.#: OMO-BSP613PH6327-1190

              		 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
              BSP613PH6327XTSA1

              Mfr.#: BSP613PH6327XTSA1

              OMO.#: OMO-BSP613PH6327XTSA1-INFINEON-TECHNOLOGIES

              		 MOSFET P-CH 60V 2.9A SOT-223
              BSP613PL6327

              Mfr.#: BSP613PL6327

              OMO.#: OMO-BSP613PL6327-1190

              		 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
              BSP613PL6327HUSA1

              Mfr.#: BSP613PL6327HUSA1

              OMO.#: OMO-BSP613PL6327HUSA1-INFINEON-TECHNOLOGIES

              		 MOSFET P-CH 60V 2.9A SOT-223
              BSP613PE6327

              Mfr.#: BSP613PE6327

              OMO.#: OMO-BSP613PE6327-1190

              		 Neu und Original
              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              3500
              Menge eingeben:
              Der aktuelle Preis von BSP613P L6327 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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              Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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