FDS2170N7

Mfr. #:: FDS2170N7
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 200V 3A 8-SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDS2170N7 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: FDS2170N7 Datasheet FDS2170N7 Datasheet (P4-P6)
ECAD Model:

Produkteigenschaft
Attributwert

Tags: FDS2170N7, FDS2170N, FDS217, FDS21, FDS2, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS2170N7 Beschreibung

***Yang: MOSFET N-CH 200V 3A 8-SOIC - Rail/Tube

***nsix Microsemi: Power Field-Effect Transistor, 3A I(D), 200V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ter Electronics: 200V/20V, 128MO, NCH, SINGLE, SO8B, 1000A GOX, PTI

***nell: MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:3A; Resistance, Rds On:0.128ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:20A; No. of Pins:8; Power Dissipation:3mW; Voltage, Vds Max:200V

***et: Trans MOSFET N-CH 200V 3A 8-Pin FLMP SOIC T/R

***ark: N-CHANNEL POWERTRENCH MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

***nell: MOSFET, N, SMD, FLMP, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.128ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Diss

***ure Electronics: Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8

***emi: N-Channel PowerTrench® MOSFET,200V, 3.0A, 130mΩ

*** Source Electronics: MOSFET N-CH 200V 3A 8-SO / Trans MOSFET N-CH 200V 3A 8-Pin SOIC T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***nell: MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

***ponent Stockers USA: 3 A 150 V 0.095 ohm N-CHANNEL Si POWER MOSFET MS-012AA

***i-Key: MOSFET N-CH 150V 3A 8-SOP

***ser: MOSFETs SO-8

***ark: Mosfet Transistor, N Channel, 3.7 A, 200 V, 0.0625 Ohm, 10 V, 4 V

***ure Electronics: Single N-Channel 200 V 78 mOhm 44 nC HEXFET® Power Mosfet - SOIC-8

*** Source Electronics: Synchronous MOSFET for Notebook Processor Power | MOSFET N CH 200V 3.7A 8-SO

***ical: Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC Tube

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

*** Stop Electro: Small Signal Field-Effect Transistor, 3.7A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***nell: MOSFET, N-CH, 200V, 3.7A, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.0625ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***emi: N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

***ure Electronics: N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 200V 3.9A 8-Pin SOIC N T/R - Tape and Reel

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.9A; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:2.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

***rchild Semiconductor: This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N, SO-8; Transistor Polarity:N; Max Current Id:3.9A; Max Voltage Vds:200V; On State Resistance:0.07ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:Cobalt dichloride; Avalanche Single Pulse Energy Eas:37.5mJ; Case Style:SOIC; Cont Current Id:3.9A; Max On State Resistance:0.07ohm; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Pin Configuration:D(5,6,7,8), S(1,2,3), G(4); Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Termination Type:SMD; Transistor Type:MOSFET; Typ Capacitance Ciss:1905pF; Typ Voltage Vds:200V; Typ Voltage Vgs th:2.9V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

***et: Trans MOSFET N-CH 200V 5.3A 8-Pin PowerPAK SOIC

***ure Electronics: Single N-Channel 200 V 0.08 O 42 nC Surface Mount Power Mosfet - PowerPAK SO-8

***ark: N CH MOSFET; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V; Power Dissipation:1.9W RoHS Compliant: No

***nell: MOSFET,N CH,200V.3.2A,PPSO8; Transistor Polarity:N; Max Current Id:3.2A; Max Voltage Vds:200V; On State Resistance:5ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:1.9W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC PowerPAK; No. of Pins:8; Case Style:SOIC PowerPAK; Cont Current Id:3.2A; Current Temperature:25°C; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Max Junction Temperature Tj:150°C; Max On State Resistance:0.080ohm; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:2V; N-channel Gate Charge:42nC; Power Dissipation Pd:1.9W; Pulse Current Idm:40A; Termination Type:SMD; Transistor Type:MOSFET; Typ Voltage Vds:200V; Typ Voltage Vgs th:4.5V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDS2170N7 DISTI # FDS2170N7TR-ND	ON Semiconductor	MOSFET N-CH 200V 3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FDS2170N7 DISTI # FDS2170N7CT-ND	ON Semiconductor	MOSFET N-CH 200V 3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDS2170N7 DISTI # FDS2170N7DKR-ND	ON Semiconductor	MOSFET N-CH 200V 3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDS2170N7 DISTI # 512-FDS2170N7	ON Semiconductor	MOSFET 200V NCh PowerTrench RoHS: Compliant	0
FDS2170N7	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 3A I(D), 200V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	23786	1000:$1.9700 500:$2.0800 100:$2.1600 25:$2.2600 1:$2.4300
FDS2170N7	Fairchild Semiconductor Corporation		35572
FDS2170N7	Fairchild Semiconductor Corporation	3 A, 200 V, 0.128 ohm, N-CHANNEL, Si, POWER, MOSFET	2800	1299:$0.7035 717:$0.7705 1:$2.0100
FDS2170N7	Fairchild Semiconductor Corporation	3 A, 200 V, 0.128 ohm, N-CHANNEL, Si, POWER, MOSFET	54	44:$1.0500 13:$1.7500 1:$2.8000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDS2572 OMO.#: OMO-FDS2572	MOSFET 150V N-Ch UltraFET Trench
	Mfr.#: FDS2070N7 OMO.#: OMO-FDS2070N7	MOSFET 150V NCh PowerTrench
	Mfr.#: FDS2-320-05 OMO.#: OMO-FDS2-320-05-1190	Neu und Original
	Mfr.#: FDS2170N7 OMO.#: OMO-FDS2170N7-ON-SEMICONDUCTOR	MOSFET N-CH 200V 3A 8-SOIC
	Mfr.#: FDS2508P OMO.#: OMO-FDS2508P-1190	Neu und Original
	Mfr.#: FDS25AN OMO.#: OMO-FDS25AN-1190	Neu und Original
	Mfr.#: FDS2672-F085 OMO.#: OMO-FDS2672-F085-ON-SEMICONDUCTOR	MOSFET N-CH 200V 3.9A 8-SOIC
	Mfr.#: FDS2672-NL OMO.#: OMO-FDS2672-NL-1190	Neu und Original
	Mfr.#: FDS2682 OMO.#: OMO-FDS2682-1190	Neu und Original
	Mfr.#: FDS2734 OMO.#: OMO-FDS2734-ON-SEMICONDUCTOR	MOSFET N-CH 250V 3A 8-SOIC

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von FDS2170N7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,06 $~~; ~~1,06 $~~

10: ~~1,00 $~~; ~~10,02 $~~

100: ~~0,95 $~~; ~~94,97 $~~

500: ~~0,90 $~~; ~~448,50 $~~

1000: ~~0,84 $~~; ~~844,20 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDS2170N7 3
FDS2170N 6
FDS217 7
FDS21 11
FDS2 53
FDS 1298

FDS2170N7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes