STGWT40V60DF

STGWT40V60DF
Mfr. #:
STGWT40V60DF
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors 600V 40A High Speed Trench Gate IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGWT40V60DF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGWT40V60DF Mehr Informationen STGWT40V60DF Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3P
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
2.35 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
283 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGWT40V60DF
Verpackung:
Rohr
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
300
Unterkategorie:
IGBTs
Gewichtseinheit:
0.238311 oz
Tags
STGWT40V60DF, STGWT40V, STGWT4, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***p One Stop Global
Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 600V 80A 3-Pin TO-39
***Components
IGBT Trench gate 600V 40A/100 deg TO-3P
***i-Key
IGBT 600V 80A 283W TO3P-3
***et
STMICROELECTRONICS STGWT40V60DF
***ark
Ptd High Voltage
IGBT V Series
STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.
Teil # Mfg. Beschreibung Aktie Preis
STGWT40V60DF
DISTI # V79:2366_17797670
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
568
  • 1000:$2.4440
  • 500:$2.8100
  • 100:$3.1140
  • 10:$3.4450
  • 1:$4.0540
STGWT40V60DF
DISTI # 497-13771-5-ND
STMicroelectronicsIGBT 600V 80A 283W TO3P-3
RoHS: Compliant
Min Qty: 1
Container: Tube
222In Stock
  • 1020:$2.6195
  • 510:$3.1060
  • 120:$3.6487
  • 30:$4.2100
  • 1:$4.9600
STGWT40V60DF
DISTI # 26119745
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
568
  • 500:$2.8100
  • 100:$3.1140
  • 10:$3.4450
  • 4:$4.0540
STGWT40V60DF
DISTI # STGWT40V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin TO-39 - Rail/Tube (Alt: STGWT40V60DF)
RoHS: Compliant
Min Qty: 600
Container: Tube
Americas - 0
  • 600:$2.3900
  • 1200:$2.2900
  • 1800:$2.1900
  • 3000:$2.0900
  • 6000:$1.9900
STGWT40V60DF
DISTI # STGWT40V60DF
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 3-Pin TO-39 (Alt: STGWT40V60DF)
RoHS: Compliant
Min Qty: 30
Europe - 0
  • 30:€2.1900
  • 60:€2.0900
  • 120:€1.9900
  • 180:€1.8900
  • 300:€1.7900
STGWT40V60DF
DISTI # 511-STGWT40V60DF
STMicroelectronicsIGBT Transistors 600V 40A High Speed Trench Gate IGBT
RoHS: Compliant
12
  • 1:$4.9900
  • 10:$4.0100
  • 100:$3.5600
  • 250:$3.2900
STGWT40V60DF
DISTI # C1S730200791128
STMicroelectronicsTrans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
568
  • 500:$2.8100
  • 100:$3.1140
  • 10:$3.4450
  • 1:$4.0540
STGWT40V60DFSTMicroelectronics 50
  • 1:$1.4600
  • 100:$1.4600
  • 500:$1.4600
  • 1000:$1.4600
Bild Teil # Beschreibung
SDSDQAF3-008G-I

Mfr.#: SDSDQAF3-008G-I

OMO.#: OMO-SDSDQAF3-008G-I

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Mfr.#: MAX3232CSE+

OMO.#: OMO-MAX3232CSE-

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VS-8ETX06-M3

Mfr.#: VS-8ETX06-M3

OMO.#: OMO-VS-8ETX06-M3

Rectifiers 600V 8A TO-220 Fred Pt
DMP3017SFGQ-7

Mfr.#: DMP3017SFGQ-7

OMO.#: OMO-DMP3017SFGQ-7

MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm
ISO5852SEVM

Mfr.#: ISO5852SEVM

OMO.#: OMO-ISO5852SEVM

Power Management IC Development Tools ISO5852SEVM
SDP810-125PA

Mfr.#: SDP810-125PA

OMO.#: OMO-SDP810-125PA

Board Mount Pressure Sensors Tube Connection, I2C , 125Pa
CC0603KRX7R9BB104

Mfr.#: CC0603KRX7R9BB104

OMO.#: OMO-CC0603KRX7R9BB104

Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
DMP3017SFGQ-7

Mfr.#: DMP3017SFGQ-7

OMO.#: OMO-DMP3017SFGQ-7-DIODES

30V P-CHANNEL ENHANCEMENT MODE MOSFET
ISO5852SEVM

Mfr.#: ISO5852SEVM

OMO.#: OMO-ISO5852SEVM-TEXAS-INSTRUMENTS

EVAL BOARD FOR ISO5852S
VS-8ETX06-M3

Mfr.#: VS-8ETX06-M3

OMO.#: OMO-VS-8ETX06-M3-VISHAY

DIODE FRED 600V 8A TO220AC
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von STGWT40V60DF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,71 $
4,71 $
10
4,00 $
40,00 $
100
3,47 $
347,00 $
250
3,29 $
822,50 $
500
2,95 $
1 475,00 $
1000
2,49 $
2 490,00 $
2500
2,37 $
5 925,00 $
5000
2,28 $
11 400,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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