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SKM100GB063D

SKM100GB063D
Mfr. #:
SKM100GB063D
Hersteller:
SEMIKRON
Beschreibung:
IGBT, D-61, IGBT, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 degC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SKM100GB063D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SKM100GB0, SKM100GB, SKM100G, SKM100, SKM10, SKM1, SKM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IGBT; D-61; IGBT; 600 V; 130 A; 600 V; 130 A; 600 V; -40 to 150 degC
***Components
Semikron SKM100GB063D, SEMITRANS2 , N-Channel Dual IGBT Transistor Module, 130 A max, 600 V, Screw Mount
***ark
Igbt Module, 600V, 130A, Semitrans 2
***ponent Distributors Inc.
IGBT halfbridge standard
***hardson RFPD
POWER IGBT TRANSISTOR
***ment14 APAC
Prices include import duty and tax. IGBT MODULE, DUAL N CH, 600V, 130A; Transistor Polarity:Dual N Channel; DC Collector Current:130A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Module; No. of Pins:7Pins; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (15-Jun-2015)
***nell
MODULO IGBT, DOPPIO CH N, 600V, 130A; Polarità Transistor:Canale N Doppio; Corrente di Collettore CC:130A; Tensione Saturaz Collettore-Emettitore Vce(on):2.1V; Dissipazione di Potenza Pd:-; Tensione Collettore-Emettitore V(br)ceo:600V; Modello Case Transistor:Module; No. di Pin:7Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jun-2015)
***ikron
not recommended for new design Features: N channel, homogeneous Silicon structure (NPT- Non punch through IGBT) Low tail current with low temperature dependence High short circuit capability, self limiting if term. G is clamped to E Pos. temp.-coeff. of V CEsat Very low C ies , C oes , C res Latch-up free Fast & soft inverse CAL diodes Isolated copper Bonding Technology without hard mould Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: Switching (not for linear use) Switched mode power supplies UPS Three phase inverters for servo / AC motor speed control Pulse frequencies also above 10 kHz
Teil # Mfg. Beschreibung Aktie Preis
SKM100GB063D
DISTI # 70098208		SEMIKRONIGBT,D-61,IGBT,600 V,130 A,600 V,130 A,600 V,-40 to 150 degC
RoHS: Compliant		0
  • 1:$96.6800
  • 8:$89.7600
  • 64:$83.7800
  • 96:$78.5500
  • 144:$73.9300
SKM100GB063D
DISTI # 1251116		SEMIKRONSEMITRANS 2 NPT-IGBT MODULE 600V 100A, EA21
  • 10:£62.9200
  • 5:£69.0700
  • 2:£75.7100
  • 1:£82.3500
SKM100GB063D
DISTI # SKM100GB063D		SEMIKRONPOWER IGBT TRANSISTOR
RoHS: Compliant		0
    SKM100GB063D
    DISTI # 2423680    		SEMIKRONIGBT MODULE, DUAL N CH, 600V, 130A
    RoHS: Compliant    		0
    • 50:£55.3500
    • 10:£57.3900
    • 5:£59.4200
    • 1:£70.8500
    SKM100GB063D
    DISTI # 2423680    		SEMIKRONIGBT MODULE, DUAL N CH, 600V, 130A
    RoHS: Compliant    		0
    • 250:$113.8500
    • 100:$115.7500
    • 25:$119.7400
    • 10:$124.0200
    • 1:$128.6100
    Bild Teil # Beschreibung
    SKM100GAL123D

    Mfr.#: SKM100GAL123D

    OMO.#: OMO-SKM100GAL123D-1190

    		 POWER IGBT TRANSISTOR
    SKM100GAL173D

    Mfr.#: SKM100GAL173D

    OMO.#: OMO-SKM100GAL173D-1190

    		 Neu und Original
    SKM100GAR128D

    Mfr.#: SKM100GAR128D

    OMO.#: OMO-SKM100GAR128D-1190

    		 Neu und Original
    SKM100GB063D

    Mfr.#: SKM100GB063D

    OMO.#: OMO-SKM100GB063D-1190

    		 IGBT, D-61, IGBT, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 degC
    SKM100GB066D

    Mfr.#: SKM100GB066D

    OMO.#: OMO-SKM100GB066D-1190

    		 Neu und Original
    SKM100GB125DN

    Mfr.#: SKM100GB125DN

    OMO.#: OMO-SKM100GB125DN-1190

    		 IGBT Array & Module Transistor, Dual N Channel, 100 A, 3.3 V, 1.2 kV, Module RoHS Compliant: Yes
    SKM100GB128

    Mfr.#: SKM100GB128

    OMO.#: OMO-SKM100GB128-1190

    		 Neu und Original
    SKM100GB12D

    Mfr.#: SKM100GB12D

    OMO.#: OMO-SKM100GB12D-1190

    		 Neu und Original
    SKM100GB12T4

    Mfr.#: SKM100GB12T4

    OMO.#: OMO-SKM100GB12T4-1190

    		 IGBT Array & Module Transistor, Dual N Channel, 160 A, 1.8 V, 1.2 kV, Module RoHS Compliant: Yes
    SKM100GB12T4G

    Mfr.#: SKM100GB12T4G

    OMO.#: OMO-SKM100GB12T4G-1190

    		 IGBT MODULE, DUAL, 1.2KV, 154A, Transistor Polarity:Dual NPN, DC Collector Current:154A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:-, Collector Emitter Voltage V(br
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von SKM100GB063D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    110,90 $
    110,90 $
    10
    105,35 $
    1 053,50 $
    100
    99,81 $
    9 980,55 $
    500
    94,26 $
    47 130,40 $
    1000
    88,72 $
    88 716,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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