RQ3E070BNTB

Mfr. #:: RQ3E070BNTB
Hersteller:: Rohm Semiconductor
Beschreibung:: MOSFET 4.5V Drive Nch MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: RQ3E070BNTB Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: RQ3E070BNTB Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ROHM Halbleiter

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: HSMT-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 7 A

Rds On - Drain-Source-Widerstand:: 20 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 8.9 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Transistortyp:: 1 N-Channel

Marke:: ROHM Halbleiter

Vorwärtstranskonduktanz - Min:: 4 S

Abfallzeit:: 5 ns

Produktart:: MOSFET

Anstiegszeit:: 8 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 23 ns

Typische Einschaltverzögerungszeit:: 6 ns

Teil # Aliase:: RQ3E070BN

Gewichtseinheit:: 0.196723 oz

Tags: RQ3E070, RQ3E07, RQ3E0, RQ3E, RQ3

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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RQ3E070BNTB Beschreibung

***ark: MOSFET Transistor, N Channel, 7 A, 30 V, 0.02 ohm, 10 V, 2.5 V RoHS Compliant: Yes

***et: Trans MOSFET N-CH 30V ±7A 8-Pin HSMT Embossed Tape and Reel

***nell: MOSFET, N-CH, 30V, 7A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power D

***ure Electronics: Dual N-Channel 30 V 0.0195 Ohm 5 W Surface Mount Mosfet - SOIC-8

***ark: Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:8.5A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V ;RoHS Compliant: Yes

***nell: MOSFET, DUAL N-CH, 30V, 8.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

*** Source Electronics: Trans MOSFET N-CH 30V 8.2A 6-Pin TSOP T/R / MOSFET N-CH 30V 8.2A 6TSOP

***ure Electronics: Single N-Channel 30 V 29 mOhm 4.8 nC HEXFET® Power Mosfet - SC-74

***nell: MOSFET, N CHANNEL, HEXFET, 30V, 8.2A, TSOP-6

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.2A; On Resistance Rds(On):0.015Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes

***(Formerly Allied Electronics): SI3410DV-T1-GE3 N-channel MOSFET Transistor; 8 A; 30 V; 6-Pin TSOP

***ure Electronics: Si3410DV Series 30 V 19.5 mOhm Surface Mount N-Channel MOSFET - TSOP-6

*** Source Electronics: MOSFET N-CH 30V 8A 6-TSOP / Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R

***roFlash: Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

***nell: MOSFET, N-CH, 30V, 8A, TSOP-6; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 4.1W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jun-2015)

***ical: Trans MOSFET N-CH 30V 8A Automotive 3-Pin SOT-23

***nsix Microsemi: Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N-CH, 30V, 8A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited

***emi: N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ

***ure Electronics: N-Channel 30 V 22 mOhm Logic Level PowerTrench Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 30V 8.4A 8-Pin SOIC N T/R - Tape and Reel

***ment14 APAC: MOSFET, N, SMD, 8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Source Voltage Vds:30V; On Resistance

***rchild Semiconductor: This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

***nell: MOSFET, N, SMD, 8-SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 8.4A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.9V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Dual N-Channel 30 V 0.028 Ohm Enhancement Mode MOSFET - SOIC-8

***et Europe: Transistor MOSFET Array Dual N-CH 30V 7.1A 8-Pin SOIC T/R

***nell: MOSFET, NN, SO-8; Module Configuration:Dual N Channel; Transistor Polarity:Dual N; Max Current Id:7.1A; Max Voltage Vds:30V; On State Resistance:0.028ohm; Rds Measurement Voltage:10V; Typ Voltage Vgs th:3V; Power Dissipation:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; Case Style:SOIC; Termination Type:SMD; Transistor Type:MOSFET; Cont Current Id:7.1A; Max Voltage Vgs:20V; Min Voltage Vgs th:1V; On State Resistance @ Vgs = 4.5V:0.045ohm; On State resistance @ Vgs = 10V:0.028ohm; Pulse Current Idm:33.6A; Typ Voltage Vds:30V; Voltage Vgs Rds on Measurement:10V

RQ3E070BNTB Mehr Informationen

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
RQ3E070BNTB DISTI # RQ3E070BNTBCT-ND	ROHM Semiconductor	MOSFET N-CH 30V 7A HSMT8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1201In Stock	1000:$0.1133 500:$0.1473 100:$0.2153 10:$0.3460 1:$0.4600
RQ3E070BNTB DISTI # RQ3E070BNTBDKR-ND	ROHM Semiconductor	MOSFET N-CH 30V 7A HSMT8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1201In Stock	1000:$0.1133 500:$0.1473 100:$0.2153 10:$0.3460 1:$0.4600
RQ3E070BNTB DISTI # RQ3E070BNTBTR-ND	ROHM Semiconductor	MOSFET N-CH 30V 7A HSMT8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	75000:$0.0732 30000:$0.0798 15000:$0.0853 6000:$0.0935 3000:$0.0990
RQ3E070BNTB DISTI # RQ3E070BNTB	ROHM Semiconductor	Trans MOSFET N-CH 30V ±7A 8-Pin HSMT Embossed Tape and Reel - Tape and Reel (Alt: RQ3E070BNTB) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0699 18000:$0.0719 12000:$0.0759 6000:$0.0809 3000:$0.0869
RQ3E070BNTB DISTI # RQ3E070BNTB	ROHM Semiconductor	Trans MOSFET N-CH 30V ±7A 8-Pin HSMT Embossed Tape and Reel (Alt: RQ3E070BNTB) RoHS: Compliant Min Qty: 1 Container: Reel	Europe - 0	1000:€0.0979 500:€0.1049 100:€0.1139 50:€0.1239 25:€0.1519 10:€0.1959 1:€0.2739
RQ3E070BNTB DISTI # 755-RQ3E070BNTB	ROHM Semiconductor	MOSFET 4.5V Drive Nch MOSFET RoHS: Compliant	0	1:$0.4500 10:$0.3120 100:$0.1440 1000:$0.1100 3000:$0.0940 9000:$0.0860 24000:$0.0800 45000:$0.0720 99000:$0.0690
RQ3E070BNTB	ROHM Semiconductor		50	27:$0.5700 6:$0.7600 1:$0.9500
RQ3E070BNTB	ROHM Semiconductor		100	1:¥3.9535 100:¥2.2416 1500:¥1.4212 3000:¥1.0588
RQ3E070BNTB.. DISTI # 2490607	ROHM Semiconductor	MOSFET, N-CH, 30V, 7A, HSMT-8	0	500:£0.1000 250:£0.1100 100:£0.1140 25:£0.2600 5:£0.2710
RQ3E070BNTB.. DISTI # 2490607	ROHM Semiconductor	MOSFET, N-CH, 30V, 7A, HSMT-8 RoHS: Compliant	0	1000:$0.1830 500:$0.1940 250:$0.2240 100:$0.2650 10:$0.3240 1:$0.3730
RQ3E070BNTB	ROHM Semiconductor	RoHS(ship within 1day)	63	1:$0.7300 10:$0.4300 50:$0.2700 100:$0.2300 500:$0.2000 1000:$0.1900

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von RQ3E070BNTB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,45 $~~; ~~0,45 $~~

10: ~~0,31 $~~; ~~3,12 $~~

100: ~~0,14 $~~; ~~14,40 $~~

1000: ~~0,11 $~~; ~~110,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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RQ3E070BNTB

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes