SI4850BDY-T1-GE3

Mfr. #:: SI4850BDY-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 60V Vds 20V Vgs SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4850BDY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4850BDY-T1-GE3 Datasheet SI4850BDY-T1-GE3 Datasheet (P4-P6)
ECAD Model:
Mehr Informationen:: SI4850BDY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 60 V

Id - Kontinuierlicher Drainstrom:: 11.3 A

Rds On - Drain-Source-Widerstand:: 19.5 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.8 V

Vgs - Gate-Source-Spannung:: 2.8 V

Qg - Gate-Ladung:: 11.1 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 4.5 W

Aufbau:: Single

Verpackung:: Spule

Marke:: Vishay / Siliconix

Abfallzeit:: 10 ns

Produktart:: MOSFET

Anstiegszeit:: 21 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 10 ns

Typische Einschaltverzögerungszeit:: 7 ns

Tags: SI4850, SI485, SI48, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4850BDY-T1-GE3 Beschreibung

***et Japan: Transistor MOSFET N-CH 60V 11.3A 8-Pin SOIC

***ical: Trans MOSFET N-CH 60V 8.4A 8-Pin SOIC N T/R

***ark: Mosfet, N-Ch, 60V, 11.3A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:11.3A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes

SI4850BDY-T1-GE3 Mehr Informationen

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4850BDY-T1-GE3 DISTI # V72:2272_21388877	Vishay Intertechnologies	SI4850BDY-T1-GE3	4994	75000:$0.3839 30000:$0.3871 15000:$0.3902 6000:$0.3933 3000:$0.3965 1000:$0.4253 500:$0.5185 250:$0.6037 100:$0.6238 50:$0.7221 25:$0.8025 10:$0.8835 1:$1.0881
SI4850BDY-T1-GE3 DISTI # V99:2348_21388877	Vishay Intertechnologies	SI4850BDY-T1-GE3	0	5000000:$0.4155 2500000:$0.4156 500000:$0.4161 5000:$0.4167
SI4850BDY-T1-GE3 DISTI # SI4850BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4950In Stock	1000:$0.4599 500:$0.5826 100:$0.7052 10:$0.9050 1:$1.0100
SI4850BDY-T1-GE3 DISTI # SI4850BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4950In Stock	1000:$0.4599 500:$0.5826 100:$0.7052 10:$0.9050 1:$1.0100
SI4850BDY-T1-GE3 DISTI # SI4850BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V SO-8 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	25000:$0.3771 12500:$0.3810 5000:$0.3959 2500:$0.4167
SI4850BDY-T1-GE3 DISTI # 32907528	Vishay Intertechnologies	SI4850BDY-T1-GE3	4994	15000:$0.3902 6000:$0.3933 3000:$0.3965 1000:$0.4253 500:$0.5185 250:$0.6037 100:$0.6238 50:$0.7221 25:$0.8025 16:$0.8835
SI4850BDY-T1-GE3 DISTI # SI4850BDY-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 11.3A ID 8-Pin SOIC T/R - Tape and Reel (Alt: SI4850BDY-T1-GE3) Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3629 25000:$0.3729 15000:$0.3839 10000:$0.3999 5000:$0.4119
SI4850BDY-T1-GE3 DISTI # SI4850BDY-T1-GE3	Vishay Intertechnologies	Transistor MOSFET N-CH 60V 11.3A 8-Pin SOIC (Alt: SI4850BDY-T1-GE3) RoHS: Compliant Min Qty: 2500	Asia - 0
SI4850BDY-T1-GE3 DISTI # SI4850BDY-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET N-Channel Single 60V VDS ±20V VGS 11.3A ID 8-Pin SOIC T/R (Alt: SI4850BDY-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.3879 500:€0.3949 100:€0.4019 50:€0.4169 25:€0.4519 10:€0.5249 1:€0.7699
SI4850BDY-T1-GE3 DISTI # 59AC7483	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET	0	10000:$0.3600 6000:$0.3690 4000:$0.3830 2000:$0.4260 1000:$0.4680 1:$0.4880
SI4850BDY-T1-GE3 DISTI # 50AC9665	Vishay Intertechnologies	MOSFET, N-CH, 60V, 11.3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.016ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes	4990	500:$0.5440 250:$0.5890 100:$0.6330 50:$0.6970 25:$0.7610 10:$0.8250 1:$1.0100
SI4850BDY-T1-GE3 DISTI # 78-SI4850BDY-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SO-8 RoHS: Compliant	4967	1:$1.0000 10:$0.8170 100:$0.6270 500:$0.5390 1000:$0.4260 2500:$0.3970 5000:$0.3780 10000:$0.3630
SI4850BDY-T1-GE3 DISTI # 2846625	Vishay Intertechnologies	MOSFET, N-CH, 60V, 11.3A, SOIC RoHS: Compliant	4990	1000:$0.6940 500:$0.8780 100:$1.0700 5:$1.3700
SI4850BDY-T1-GE3 DISTI # 2846625	Vishay Intertechnologies	MOSFET, N-CH, 60V, 11.3A, SOIC	4990	500:£0.4120 250:£0.4460 100:£0.4790 10:£0.6780 1:£0.8710

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: 2N7002 OMO.#: OMO-2N7002	MOSFET N-CHANNEL 60V 115mA
	Mfr.#: STP60NF10 OMO.#: OMO-STP60NF10	MOSFET N-Ch 100 Volt 80 Amp
	Mfr.#: RC0603FR-071KL OMO.#: OMO-RC0603FR-071KL	Thick Film Resistors - SMD 1K OHM 1%
	Mfr.#: STS8N6LF6AG OMO.#: OMO-STS8N6LF6AG	MOSFET Automotive-grade N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
	Mfr.#: STP60NF10 OMO.#: OMO-STP60NF10-STMICROELECTRONICS	MOSFET N-CH 100V 80A TO-220
	Mfr.#: 0454008.MR OMO.#: OMO-0454008-MR-LITTELFUSE	Surface Mount Fuses 72V 8A Slo-Blo
	Mfr.#: 2N7002 OMO.#: OMO-2N7002-ON-SEMICONDUCTOR	MOSFET N-CH 60V 115MA SOT-23
	Mfr.#: AC0603KRX7R9BB103 OMO.#: OMO-AC0603KRX7R9BB103-YAGEO	Cap Ceramic 0.01uF 50V X7R 10% SMD 0603 125C Paper T/R
	Mfr.#: STS8N6LF6AG OMO.#: OMO-STS8N6LF6AG-STMICROELECTRONICS	MOSFET N-CHANNEL 60V 8A 8SO
	Mfr.#: RC0603FR-07100KL OMO.#: OMO-RC0603FR-07100KL-YAGEO	Thick Film Resistors - SMD 100K OHM 1%

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1987
Menge eingeben:

Der aktuelle Preis von SI4850BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,00 $~~; ~~1,00 $~~

10: ~~0,82 $~~; ~~8,17 $~~

100: ~~0,63 $~~; ~~62,70 $~~

500: ~~0,54 $~~; ~~269,50 $~~

1000: ~~0,43 $~~; ~~426,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI4850 17
SI485 32
SI48 447
SI4 2994

Neueste Produkte

Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiP32452, SiP32453 Load Switch

Vishay's load switches have a low input logic control threshold and a fast turn on time.
Compare SI4850BDY-T1-GE3

SI4850 vs SI4850BDYT1GE3 vs SI4850DET1E3
E Series Power MOSFETs

Vishay series of 600 V and 650 V n-channel power MOSFETs have ultra-low maximum on-resistance and a wide range of current ratings.
SIC645A, 60 A, VRPower® Smart Power Stage (SP

Vishay's SIC645A, VRPower® smart power stage (SPS) module is an optimized driver and power stage solution for high-density, synchronous DC/DC power conversion.

More Newest Products

SI4850BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes