MRF8S21100HSR3

Mfr. #:: MRF8S21100HSR3
Hersteller:: NXP / Freescale
Beschreibung:: RF MOSFET Transistors HV8 2.1GHZ 100W
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: MRF8S21100HSR3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: MRF8S21100HSR3 Datasheet MRF8S21100HSR3 Datasheet (P4-P6)MRF8S21100HSR3 Datasheet (P7-P9)MRF8S21100HSR3 Datasheet (P10-P12)MRF8S21100HSR3 Datasheet (P13-P15)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: NXP

Produktkategorie:: HF-MOSFET-Transistoren

RoHS:: Y

Polarität des Transistors:: N-Kanal

Technologie:: Si

Vds - Drain-Source-Durchbruchspannung:: 65 V

Gewinnen:: 18.3 dB

Ausgangsleistung:: 24 W

Maximale Betriebstemperatur:: + 150 C

Montageart:: SMD/SMT

Paket / Koffer:: NI-780S

Verpackung:: Spule

Aufbau:: Single

Arbeitsfrequenz:: 2.11 GHz to 2.17 GHz

Serie:: MRF8S21100H

Marke:: NXP / Freescale

Produktart:: HF-MOSFET-Transistoren

Werkspackungsmenge:: 250

Unterkategorie:: MOSFETs

Vgs - Gate-Source-Spannung:: 10 V

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Teil # Aliase:: 935314141128

Gewichtseinheit:: 0.168010 oz

Tags: MRF8S21100HS, MRF8S2110, MRF8S211, MRF8S21, MRF8S2, MRF8S, MRF8, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF8S21100HSR3 Beschreibung

***escale Semiconductor: Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V

***W: RF Power Transistor,2110 to 2170 MHz, 100 W, Typ Gain in dB is 18.3 @ 2170 MHz, 28 V, LDMOS, SOT1793

***p One Stop Global: Trans RF MOSFET N-CH 65V 3-Pin Case 465A-06 T/R

***et Europe: Trans MOSFET N-CH 65V 2-Pin NI-780S T/R

***i-Key Marketplace: RF S BAND, N-CHANNEL POWER MOSFE

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
MRF8S21100HSR3 DISTI # 11962240	NXP Semiconductors	Trans RF MOSFET N-CH 65V 3-Pin NI-780S T/R	234	1:$105.2500
MRF8S21100HSR3 DISTI # MRF8S21100HSR3TR-ND	NXP Semiconductors	FET RF 65V 2.17GHZ NI780S RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Limited Supply - Call
MRF8S21100HSR3 DISTI # MRF8S21100HSR3CT-ND	NXP Semiconductors	FET RF 65V 2.17GHZ NI780S RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
MRF8S21100HSR3 DISTI # MRF8S21100HSR3DKR-ND	NXP Semiconductors	FET RF 65V 2.17GHZ NI780S RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
MRF8S21100HSR3 DISTI # C1S233100303140	NXP Semiconductors	Trans RF MOSFET N-CH 65V 3-Pin Case 465A-06 T/R RoHS: Compliant	234	25:$101.0000 10:$102.0000 5:$103.0000 1:$119.0000
MRF8S21100HSR3 DISTI # 841-MRF8S21100HSR3	NXP Semiconductors	RF MOSFET Transistors HV8 2.1GHZ 100W RoHS: Compliant	0
MRF8S21100HSR3	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	655	1000:$92.8400 500:$97.7200 100:$101.7400 25:$106.1000 1:$114.2600
MRF8S21100HSR3 DISTI # MRF8S21100HSR3	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	234	250:$82.8600

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: MRF8S21100HSR3 OMO.#: OMO-MRF8S21100HSR3	RF MOSFET Transistors HV8 2.1GHZ 100W
	Mfr.#: MRF8S21140HR3 OMO.#: OMO-MRF8S21140HR3	RF MOSFET Transistors RF FET HV8 2GHZ 140W NI780
	Mfr.#: MRF8S21140HSR5 OMO.#: OMO-MRF8S21140HSR5-NXP-SEMICONDUCTORS	FET RF 65V 2.14GHZ NI780S
	Mfr.#: MRF8S21100HR5 OMO.#: OMO-MRF8S21100HR5-NXP-SEMICONDUCTORS	FET RF 65V 2.17GHZ NI780H
	Mfr.#: MRF8S21100HS OMO.#: OMO-MRF8S21100HS-1190	Neu und Original
	Mfr.#: MRF8S21120HS OMO.#: OMO-MRF8S21120HS-1190	Neu und Original
	Mfr.#: MRF8S21170H OMO.#: OMO-MRF8S21170H-1190	Neu und Original
	Mfr.#: MRF8S21120HR5 OMO.#: OMO-MRF8S21120HR5-1152	RF POWER TRANSISTOR
	Mfr.#: MRF8S21120HSR5 OMO.#: OMO-MRF8S21120HSR5-1152	RF POWER TRANSISTOR
	Mfr.#: MRF8S21140HSR3 OMO.#: OMO-MRF8S21140HSR3-NXP-SEMICONDUCTORS	FET RF 65V 2.14GHZ NI780S

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2500
Menge eingeben:

Der aktuelle Preis von MRF8S21100HSR3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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MRF8S21100HSR3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes