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IRF1104PBF

IRF1104PBF
Mfr. #:
IRF1104PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF1104PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1104PBF DatasheetIRF1104PBF Datasheet (P4-P6)IRF1104PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
62 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
170 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
Vorläufig
Breite:
4.4 mm
Marke:
Infineon / IR
Abfallzeit:
19 ns
Produktart:
MOSFET
Anstiegszeit:
114 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SP001570050
Gewichtseinheit:
0.211644 oz
Tags
IRF1104P, IRF1104, IRF11, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    P***V
    P***V
    RU

    OK

    2019-02-01
    B***N
    B***N
    RU

    Not fast delivery, but i quite satisfied. The devices are working good! Thank you!

    2019-01-13
    M***y
    M***y
    RU

    Long

    2019-04-15
    A***n
    A***n
    RU

    Capacitors received, checked-good quality! Thank you!

    2019-03-29
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB
***ure Electronics
Single N-Channel 40 V 0.009 Ohm 93 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 40V, 100A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 40V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:9mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Teil # Mfg. Beschreibung Aktie Preis
IRF1104PBF
DISTI # IRF1104PBF-ND		Infineon Technologies AGMOSFET N-CH 40V 100A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2577In Stock
  • 1000:$1.0255
  • 500:$1.2151
  • 100:$1.5311
  • 10:$1.8780
  • 1:$2.0700
IRF1104PBF
DISTI # IRF1104PBF		Infineon Technologies AGTrans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1104PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$2.0069
  • 10:$1.8299
  • 25:$1.8259
  • 50:$1.8209
  • 100:$1.4849
  • 500:$1.1779
  • 1000:$0.9939
IRF1104PBF
DISTI # 63J7179		Infineon Technologies AGN CHANNEL MOSFET, 40V, 100A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    IRF1104PBF
    DISTI # 70016938    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 40V,RDS(ON) 0.009Ohm,ID 100A,TO-220AB,PD 170W,VGS +/-20V
    RoHS: Compliant    		1771
    • 1:$2.5500
    • 10:$2.2500
    • 100:$1.9700
    • 500:$1.7000
    • 1000:$1.5000
    IRF1104PBF
    DISTI # 942-IRF1104PBF    		Infineon Technologies AGMOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC
    RoHS: Compliant    		13477
    • 1:$1.7000
    • 10:$1.4400
    • 100:$1.1500
    • 500:$1.0100
    • 1000:$0.8330
    IRF1104PBFInternational Rectifier 100
    • 3:$2.1000
    • 11:$1.5750
    • 33:$1.3125
    IRF1104PBF
    DISTI # 5411994    		Infineon Technologies AGMOSFET N-CHANNEL 40V 100A TO220AB, EA234
    • 1:£2.0000
    • 10:£1.0200
    • 25:£0.9400
    IRF1104PBF
    DISTI # 5411994P    		Infineon Technologies AGMOSFET N-CHANNEL 40V 100A TO220AB, TU336
    • 10:£1.0200
    • 25:£0.9400
    IRF1104PBFInternational Rectifier100 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB80
    • 44:$1.0500
    • 13:$1.7500
    • 1:$2.8000
    IRF1104PBF
    DISTI # IRF1104PBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,40V,100A,170W,TO220AB155
    • 1:$1.5900
    • 3:$1.4500
    • 10:$1.2100
    • 50:$1.0600
    IRF1104PBF
    DISTI # XSKDRABV0021331    		Infineon Technologies AG 
    RoHS: Compliant    		1700
    • 650:$1.1100
    • 1512:$1.0400
    IRF1104PBF
    DISTI # XSKDRABS0023722    		Infineon Technologies AG 
    RoHS: Compliant    		1800
    • 1000:$1.1300
    • 1800:$1.0500
    IRF1104PBF
    DISTI # 8647992    		Infineon Technologies AGMOSFET, N, 40V, 100A, TO-220
    RoHS: Compliant    		0
    • 1:$2.6900
    • 10:$2.2800
    • 100:$1.8200
    • 500:$1.6000
    • 1000:$1.3300
    Bild Teil # Beschreibung
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    Mfr.#: 5747840-6

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    Mfr.#: LM35DT/NOPB

    OMO.#: OMO-LM35DT-NOPB

    		 Board Mount Temperature Sensors PREC CENTIGRADE TEMP SENSOR
    83500000005

    Mfr.#: 83500000005

    OMO.#: OMO-83500000005

    		 Fuse Holder Accessories FLUSH MNT CAP FOR 820-4 / 830-4 HOLDER
    IR2110SPBF

    Mfr.#: IR2110SPBF

    OMO.#: OMO-IR2110SPBF-INFINEON-TECHNOLOGIES

    		 Gate Drivers HI LO SIDE DRVR 500V 2A 10ns
    RCA08056K49FKEA

    Mfr.#: RCA08056K49FKEA

    OMO.#: OMO-RCA08056K49FKEA-433

    		 Res Thick Film 0805 6.49K Ohm 1% 1/8W ±100ppm/°C Molded SMD Paper T/R (Alt: RCA08056K49FKEA)
    HIP2100IBZT

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    OMO.#: OMO-HIP2100IBZT-INTERSIL

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    Verfügbarkeit
    Aktie:
    13
    Auf Bestellung:
    1996
    Menge eingeben:
    Der aktuelle Preis von IRF1104PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,69 $
    1,69 $
    10
    1,43 $
    14,30 $
    100
    1,14 $
    114,00 $
    500
    1,00 $
    500,00 $
    1000
    0,83 $
    833,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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