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Teil # | Mfg. | Beschreibung | Aktie | Preis |
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SI4900DY-T1-GE3 DISTI # V72:2272_09216636 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 304 |
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SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3CT-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 2907In Stock |
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SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3DKR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 2907In Stock |
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SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3TR-ND | Vishay Siliconix | MOSFET 2N-CH 60V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | 2500In Stock |
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SI4900DY-T1-GE3 DISTI # 27121565 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 304 |
|
SI4900DY-T1-GE3 DISTI # SI4900DY-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4900DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel | Americas - 0 |
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SI4900DY-T1-GE3 DISTI # 23T8519 | Vishay Intertechnologies | MOSFET Transistor, Dual N Channel, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V RoHS Compliant: Yes | 6579 |
|
SI4900DY-T1-GE3 DISTI # 15R5113 | Vishay Intertechnologies | DUAL N CHANNEL MOSFET, 60V, 5.3A,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.046ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
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SI4900DY-T1-GE3 DISTI # 781-SI4900DY-GE3 | Vishay Intertechnologies | MOSFET 60V 5.3A 3.1W 58mohm @ 10V RoHS: Compliant | 2489 |
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SI4900DY-T1-GE3 DISTI # 7103364 | Vishay Intertechnologies | MOSFET N-CHANNEL 60V 4.3A SOIC8, PK | 80 |
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SI4900DY-T1-GE3 DISTI # 7103364P | Vishay Intertechnologies | MOSFET N-CHANNEL 60V 4.3A SOIC8, RL | 190 |
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SI4900DYT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant | Europe - 2500 | |
SI4900DY-T1-GE3 DISTI # C1S803601729574 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 4.3A 8-Pin SOIC N T/R RoHS: Compliant | 304 |
|
SI4900DY-T1-GE3 DISTI # 1858965RL | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 0 |
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SI4900DY-T1-GE3 DISTI # 1858965 | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 6579 |
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SI4900DY-T1-GE3 DISTI # 1858965 | Vishay Intertechnologies | MOSFET,NN CH,DIODE,60V,5.3A,8-SOIC RoHS: Compliant | 6699 |
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Bild | Teil # | Beschreibung |
---|---|---|
Mfr.#: LMX2594RHAT OMO.#: OMO-LMX2594RHAT |
Phase Locked Loops - PLL HIGH PERFORMANCE RF SYNTHESIZER | |
Mfr.#: TCAN1042DQ1 OMO.#: OMO-TCAN1042DQ1 |
CAN Interface IC automotive transceiver | |
Mfr.#: FQA8N100C OMO.#: OMO-FQA8N100C |
MOSFET 1000V N-Channe MOSFET | |
Mfr.#: LDF33DT-TR OMO.#: OMO-LDF33DT-TR |
LDO Voltage Regulators 1A Very low drop voltage regulator IC | |
Mfr.#: STM32F303RBT6 OMO.#: OMO-STM32F303RBT6 |
ARM Microcontrollers - MCU 32-Bit ARM Cortex M4 72MHz 128kB MCU FPU | |
Mfr.#: IXFH6N100F OMO.#: OMO-IXFH6N100F |
MOSFET HiPerRF Power Mosfet 1000V 6A | |
Mfr.#: HIH6031-021-001 OMO.#: OMO-HIH6031-021-001 |
Board Mount Humidity Sensors SOIC-8, 4.5%RH 3.3 Vdc, 650uA | |
Mfr.#: FQA8N100C |
MOSFET N-CH 1000V 8A TO-3P | |
Mfr.#: TCAN1042DQ1 |
CAN Interface IC Automotive Fault Protected CAN Transceiver With Flexible Data-Rate 8-SOIC -55 to 125 | |
Mfr.#: STM32F303RBT6 |
IC MCU 32BIT 128KB FLASH 64LQFP |