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FGA30N60LSDTU

FGA30N60LSDTU
Mfr. #:
FGA30N60LSDTU
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors 30A 600V N-Ch Planar
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGA30N60LSDTU Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PN-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
FGA30N60LSD
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
60 A
Höhe:
18.9 mm
Länge:
15.8 mm
Breite:
5 mm
Marke:
ON Semiconductor / Fairchild
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
450
Unterkategorie:
IGBTs
Gewichtseinheit:
0.225789 oz
Tags
FGA30N60, FGA30N6, FGA30N, FGA30, FGA3, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(N) Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
***ark
RAIL/N-CH / 30A 600V Planar IGBT
***rchild Semiconductor
Using Fairchild's advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optimum performance for medium switching application such as solar inverter, UPS applications where low conduction losses are the most important factor.
Teil # Mfg. Beschreibung Aktie Preis
FGA30N60LSDTU
DISTI # V79:2366_17782446		ON SemiconductorPTPIGBT TO3PN 30A 600V400
  • 2500:$2.4952
  • 1000:$2.6463
  • 500:$3.1337
  • 250:$3.4928
  • 100:$3.6767
  • 10:$4.2261
  • 1:$5.4491
FGA30N60LSDTU
DISTI # FGA30N60LSDTUFS-ND		ON SemiconductorIGBT 600V 60A 480W TO3PN
RoHS: Compliant
Min Qty: 1
Container: Tube		450In Stock
  • 2700:$2.6783
  • 900:$3.3345
  • 450:$3.7162
  • 25:$4.5196
  • 10:$4.7810
  • 1:$5.3200
FGA30N60LSDTU
DISTI # 30249952		ON SemiconductorPTPIGBT TO3PN 30A 600V400
  • 2500:$2.4952
  • 1000:$2.6463
  • 500:$3.1337
  • 250:$3.4928
  • 100:$3.6767
  • 10:$4.2261
  • 6:$4.9538
FGA30N60LSDTU
DISTI # FGA30N60LSDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(N) Tube (Alt: FGA30N60LSDTU)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€2.2900
  • 100:€2.3900
  • 500:€2.3900
  • 50:€2.4900
  • 10:€2.5900
  • 25:€2.5900
  • 1:€2.7900
FGA30N60LSDTU
DISTI # FGA30N60LSDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(N) Tube - Bulk (Alt: FGA30N60LSDTU)
RoHS: Not Compliant
Min Qty: 118
Container: Bulk		Americas - 0
  • 590:$2.5900
  • 1180:$2.5900
  • 118:$2.6900
  • 236:$2.6900
  • 354:$2.6900
FGA30N60LSDTU
DISTI # FGA30N60LSDTU		ON SemiconductorTrans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-3P(N) Tube - Rail/Tube (Alt: FGA30N60LSDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$2.2900
  • 900:$2.3900
  • 1800:$2.3900
  • 2700:$2.3900
  • 450:$2.4900
FGA30N60LSDTU
DISTI # 512-FGA30N60LSDTU		ON SemiconductorIGBT Transistors 30A 600V N-Ch Planar
RoHS: Compliant		745
  • 1:$5.0600
  • 10:$4.3000
  • 100:$3.7300
  • 250:$3.5400
  • 500:$3.1700
  • 1000:$2.6700
  • 2500:$2.5400
FGA30N60LSDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		551
  • 1000:$2.8000
  • 500:$2.9500
  • 100:$3.0700
  • 25:$3.2000
  • 1:$3.4500
FGA30N60LSDTUFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
RoHS: Compliant		Europe - 450
    Bild Teil # Beschreibung
    4884-227G

    Mfr.#: 4884-227G

    OMO.#: OMO-4884-227G-MG-CHEMICALS

    		 SOLDER, 23 AWG, 0.025 DIA, SN63/PB37, 1/2 LBS
    Verfügbarkeit
    Aktie:
    745
    Auf Bestellung:
    2728
    Menge eingeben:
    Der aktuelle Preis von FGA30N60LSDTU dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    5,06 $
    5,06 $
    10
    4,30 $
    43,00 $
    100
    3,73 $
    373,00 $
    250
    3,54 $
    885,00 $
    500
    3,17 $
    1 585,00 $
    1000
    2,67 $
    2 670,00 $
    2500
    2,54 $
    6 350,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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