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IRFU6215PBF

IRFU6215PBF
Mfr. #:
IRFU6215PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFU6215PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
295 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
44 nC
Pd - Verlustleistung:
110 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 P-Channel
Breite:
2.38 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001557816
Gewichtseinheit:
0.139332 oz
Tags
IRFU6, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK
***ineon SCT
-150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***ure Electronics
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 150V 18A IPAK
***ser
MOSFETs 150V NCh PowerMOSFET UltraFET
***el Nordic
Contact for details
***ure Electronics
Single N-Channel 100 V 115 mOhm 29.3 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.115Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 16 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 115 / Gate-Source Voltage V = 20 / Fall Time ns = 25 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 37 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 79
***ment14 APAC
MOSFET, N, 100V, 15A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:100V; On Resistance Rds(on):115mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:79W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:16A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.4°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:79W; Power Dissipation Pd:79W; Pulse Current Idm:60A; SMD Marking:IRFU3910; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ineon SCT
Automotive Q101 250V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ark
TUBE / Automotive Logic Level MOSFET 250V, 9.3A, 375 mOhm, 13 nC Qg, IPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***et Europe
Trans MOSFET P-CH 50V 9.9A 3-Pin(3+Tab) IPAK
***ark
P CHANNEL MOSFET, -50V, 9.9A, IPAK; Channel Type:P Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:9.9A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, P, -50V, -9.9A, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.9A; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 42W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Alternate Case Style: I-PAK; On State resistance @ Vgs = 10V: 280mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; Turn Off Time: 12ns; Turn On Time: 57ns; Voltage Vds Typ: -50V; Voltage Vgs Rds on Measurement: -10V
***ure Electronics
Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)
*** Stop Electro
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 100V, 7.7A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:42W; Transistor Case Style:TO-251AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Alternate Case Style:I-PAK; Current Id Max:7.7A; Junction to Case Thermal Resistance A:0°C/W; On State resistance Vgs = 10V:270ohm; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:31A; Turn Off Time:14ns; Turn On Time:27ns; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFU6215PBF
DISTI # V99:2348_13893020		Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		615
  • 25000:$0.4203
  • 10000:$0.4375
  • 2500:$0.4583
  • 1000:$0.5164
  • 500:$0.6474
  • 100:$0.7292
  • 10:$0.9292
  • 1:$1.0727
IRFU6215PBF
DISTI # IRFU6215PBF-ND		Infineon Technologies AGMOSFET P-CH 150V 13A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		9497In Stock
  • 1050:$0.6105
  • 525:$0.7733
  • 150:$0.9971
  • 75:$1.1396
  • 1:$1.4200
IRFU6215PBF
DISTI # 26946479		Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2064
  • 1000:$0.4472
  • 500:$0.4608
  • 250:$0.4752
  • 100:$0.4905
  • 24:$0.5068
IRFU6215PBF
DISTI # 26198472		Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		615
  • 500:$0.6474
  • 100:$0.7292
  • 16:$0.9292
IRFU6215PBF
DISTI # IRFU6215PBF		Infineon Technologies AGTrans MOSFET P-CH 150V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU6215PBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.4259
  • 6000:$0.4109
  • 12000:$0.3959
  • 18000:$0.3819
  • 30000:$0.3759
IRFU6215PBF
DISTI # 70018383		Infineon Technologies AGMOSFET,P-CHANNEL,-150V,-13A,580 MOHM,44 NC QG,I-PAK
RoHS: Compliant		0
  • 750:$1.3300
IRFU6215PBFInternational Rectifier 
RoHS: Not Compliant		1050
  • 1000:$0.4900
  • 500:$0.5100
  • 100:$0.5300
  • 25:$0.5600
  • 1:$0.6000
IRFU6215PBF
DISTI # 942-IRFU6215PBF		Infineon Technologies AGMOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC
RoHS: Compliant		6690
  • 1:$1.2200
  • 10:$1.0400
  • 100:$0.7960
  • 500:$0.7040
  • 1000:$0.5550
  • 2500:$0.4930
  • 10000:$0.4740
IRFU6215PBF
DISTI # 8303240P		Infineon Technologies AGHEXFET P-CH MOSFET 13A 150V IPAK, TU245
  • 50:£0.6750
  • 200:£0.5860
  • 500:£0.5180
IRFU6215PBF
DISTI # 8303240		Infineon Technologies AGHEXFET P-CH MOSFET 13A 150V IPAK, PK120
  • 10:£0.8060
  • 50:£0.6750
  • 200:£0.5860
  • 500:£0.5180
IRFU6215PBF
DISTI # IRFU6215PBF		Infineon Technologies AGTransistor: P-MOSFET,unipolar,-150V,-13A,110W,IPAK177
  • 1:$0.8791
  • 3:$0.7841
  • 10:$0.6611
  • 75:$0.5865
IRFU6215PBF
DISTI # C1S322000497074		Infineon Technologies AGTrans MOSFET P-CH Si 150V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		615
  • 500:$0.6475
  • 100:$0.7423
  • 10:$0.9372
IRFU6215PBF
DISTI # 8659184		Infineon Technologies AG 
RoHS: Compliant		0
  • 1:$1.9400
  • 10:$1.6500
  • 100:$1.2600
  • 500:$1.1200
  • 1000:$0.8780
  • 2500:$0.8360
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 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IRFU6215PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,22 $
1,22 $
10
1,04 $
10,40 $
100
0,80 $
79,60 $
500
0,70 $
352,00 $
1000
0,56 $
555,00 $
2500
0,49 $
1 232,50 $
10000
0,47 $
4 740,00 $
25000
0,46 $
11 475,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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