FDMC86012

FDMC86012
Mfr. #:
FDMC86012
Hersteller:
ON Semiconductor
Beschreibung:
RF Bipolar Transistors MOSFET 30V N-Channel PowerTrench MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC86012 Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
FDMC86012 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Fairchild Semiconductor
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.005386 oz
Montageart
SMD/SMT
Paket-Koffer
Power-33-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Triple Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
54 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
8 ns
Anstiegszeit
11 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
88 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V
Rds-On-Drain-Source-Widerstand
2.7 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
43 ns
Typische-Einschaltverzögerungszeit
11 ns
Qg-Gate-Ladung
27 nC
Vorwärts-Transkonduktanz-Min
144 S
Kanal-Modus
Erschöpfung
Tags
FDMC86, FDMC8, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FDMC8xxxx N-Ch Shielded Gate PowerTrench® MOSFETs
ON Semiconductor FDMC8xxxx N-Channel Shielded Gate PowerTrench® MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. FDMC8xxxx MOSFETs are designed for use in DC-DC conversion applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
FDMC86012
DISTI # V36:1790_06337905
ON SemiconductorRP5 30V/12V NCH POWER TRENCH M0
    FDMC86012
    DISTI # V72:2272_06337905
    ON SemiconductorRP5 30V/12V NCH POWER TRENCH M0
      FDMC86012
      DISTI # FDMC86012CT-ND
      ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      5090In Stock
      • 1000:$1.3143
      • 500:$1.5862
      • 100:$2.0394
      • 10:$2.5380
      • 1:$2.8100
      FDMC86012
      DISTI # FDMC86012DKR-ND
      ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      5090In Stock
      • 1000:$1.3143
      • 500:$1.5862
      • 100:$2.0394
      • 10:$2.5380
      • 1:$2.8100
      FDMC86012
      DISTI # FDMC86012TR-ND
      ON SemiconductorMOSFET N-CH 30V 23A 8MLP
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      3000In Stock
      • 6000:$1.1440
      • 3000:$1.1880
      FDMC86012
      DISTI # FDMC86012
      ON SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R (Alt: FDMC86012)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 30000:€0.9459
      • 18000:€1.0129
      • 12000:€1.0909
      • 6000:€1.1819
      • 3000:€1.4189
      FDMC86012
      DISTI # FDMC86012
      ON SemiconductorTrans MOSFET N-CH 30V 23A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86012)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.9869
      • 18000:$1.0119
      • 12000:$1.0249
      • 6000:$1.0379
      • 3000:$1.0449
      FDMC86012
      DISTI # 63W2855
      ON SemiconductorFET 30V 2.7 MOHM PQFN33 / REEL0
      • 9000:$1.0400
      • 1:$1.0800
      FDMC86012
      DISTI # 512-FDMC86012
      ON SemiconductorMOSFET 30V N-Channel PowerTrench MOSFET
      RoHS: Compliant
      5214
      • 1:$2.3500
      • 10:$2.0000
      • 100:$1.6000
      • 500:$1.4000
      • 1000:$1.1600
      • 3000:$1.0800
      • 6000:$1.0400
      Bild Teil # Beschreibung
      FDMC86183

      Mfr.#: FDMC86183

      OMO.#: OMO-FDMC86183

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      Mfr.#: FDMC2610

      OMO.#: OMO-FDMC2610

      MOSFET 200V N-Ch UltraFET PowerTrench MOSFET
      FDMC610P

      Mfr.#: FDMC610P

      OMO.#: OMO-FDMC610P

      MOSFET P-CH PowerTrench MOSFET
      FDMC86160ET100

      Mfr.#: FDMC86160ET100

      OMO.#: OMO-FDMC86160ET100

      MOSFET FET 100V 14 MOHM PQFN33
      FDMC013P030Z

      Mfr.#: FDMC013P030Z

      OMO.#: OMO-FDMC013P030Z

      MOSFET PT8P Z -30V/-25V ZENER ER
      FDMC8200S

      Mfr.#: FDMC8200S

      OMO.#: OMO-FDMC8200S

      MOSFET 30V Dual N-Channel PowerTrench MOSFET
      FDMC0310AS-F127

      Mfr.#: FDMC0310AS-F127

      OMO.#: OMO-FDMC0310AS-F127-ON-SEMICONDUCTOR

      MOSFET N-CH 30V 20V 8QFN
      FDMC7692S-F126

      Mfr.#: FDMC7692S-F126

      OMO.#: OMO-FDMC7692S-F126-ON-SEMICONDUCTOR

      MOSFET N-CH 30V
      FDMC8878 NC

      Mfr.#: FDMC8878 NC

      OMO.#: OMO-FDMC8878-NC-1190

      Neu und Original
      FDMC4435BZ-CUT TAPE

      Mfr.#: FDMC4435BZ-CUT TAPE

      OMO.#: OMO-FDMC4435BZ-CUT-TAPE-1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von FDMC86012 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,48 $
      1,48 $
      10
      1,41 $
      14,06 $
      100
      1,33 $
      133,23 $
      500
      1,26 $
      629,15 $
      1000
      1,18 $
      1 184,30 $
      Beginnen mit
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