AFT23H200-4S2LR6

AFT23H200-4S2LR6
Mfr. #:
AFT23H200-4S2LR6
Hersteller:
NXP / Freescale
Beschreibung:
RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AFT23H200-4S2LR6 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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HTML Datasheet:
AFT23H200-4S2LR6 DatasheetAFT23H200-4S2LR6 Datasheet (P4-P6)AFT23H200-4S2LR6 Datasheet (P7-P9)AFT23H200-4S2LR6 Datasheet (P10-P12)AFT23H200-4S2LR6 Datasheet (P13-P15)AFT23H200-4S2LR6 Datasheet (P16)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-MOSFET-Transistoren
RoHS:
Y
Technologie:
Si
Ausgangsleistung:
200 W
Verpackung:
Spule
Aufbau:
Single
Arbeitsfrequenz:
2300 MHz
Serie:
AFT23H200_4S2L
Typ:
HF-Leistungs-MOSFET
Marke:
NXP / Freescale
Produktart:
HF-MOSFET-Transistoren
Werkspackungsmenge:
150
Unterkategorie:
MOSFETs
Teil # Aliase:
935311216128
Gewichtseinheit:
0.302494 oz
Tags
AFT23H2, AFT23H, AFT23, AFT2, AFT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
***W
RF Power Transistor,2300 to 2400 MHz, 210 W, Typ Gain in dB is 15.3 @ 2300 MHz, 28 V, LDMOS, SOT1800
***et Europe
Transistor RF FET N-CH 65V 2300MHz to 2400MHz 6-Pin NI-1230 T/R
***i-Key
FET RF 2CH 65V 2.3GHZ NI1230-4
Teil # Mfg. Beschreibung Aktie Preis
AFT23H200-4S2LR6
DISTI # 21099655
NXP SemiconductorsTrans RF MOSFET N-CH 65V 7-Pin NI-1230 T/R164
  • 1:$126.1500
AFT23H200-4S2LR6
DISTI # AFT23H200-4S2LR6-ND
NXP SemiconductorsFET RF 2CH 65V 2.3GHZ NI1230-4
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$97.4699
AFT23H200-4S2LR6
DISTI # AFT23H200-4S2LR6
NXP SemiconductorsTrans MOSFET N-CH 65V 6-Pin NI-1230 T/R (Alt: AFT23H200-4S2LR6)
RoHS: Compliant
Min Qty: 150
Container: Tape and Reel
Europe - 0
    AFT23H200-4S2LR6
    DISTI # AFT23H200-4S2LR6
    NXP SemiconductorsTrans MOSFET N-CH 65V 6-Pin NI-1230 T/R - Tape and Reel (Alt: AFT23H200-4S2LR6)
    RoHS: Compliant
    Min Qty: 150
    Container: Reel
    Americas - 0
    • 150:$106.7900
    • 300:$102.5900
    • 600:$98.5900
    • 900:$94.9900
    • 1500:$93.1900
    AFT23H200-4S2LR6
    DISTI # 841-AFT23H200-4S2LR6
    NXP SemiconductorsRF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L
    RoHS: Compliant
    0
    • 150:$95.2800
    AFT23H200-4S2LR6
    DISTI # AFT23H2004S2LR6
    NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant
    164
    • 1:$122.5400
    • 10:$113.2600
    • 25:$109.9300
    Bild Teil # Beschreibung
    AFT23H200-4S2LR6

    Mfr.#: AFT23H200-4S2LR6

    OMO.#: OMO-AFT23H200-4S2LR6

    RF MOSFET Transistors HV9 2GHz 45W NI1230-4S2L
    AFT23H201-24SR6

    Mfr.#: AFT23H201-24SR6

    OMO.#: OMO-AFT23H201-24SR6

    RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 2300-2400 MHz, 45 W AVG., 28 V
    AFT23H201-24SR6

    Mfr.#: AFT23H201-24SR6

    OMO.#: OMO-AFT23H201-24SR6-NXP-SEMICONDUCTORS

    AIRFAST RF POWER LDMOS TRANSISTO
    AFT23H200-4S2LR6

    Mfr.#: AFT23H200-4S2LR6

    OMO.#: OMO-AFT23H200-4S2LR6-NXP-SEMICONDUCTORS

    FET RF 2CH 65V 2.3GHZ NI1230-4
    AFT23H200-4S2L

    Mfr.#: AFT23H200-4S2L

    OMO.#: OMO-AFT23H200-4S2L-1190

    Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von AFT23H200-4S2LR6 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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