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IXFK44N80P

IXFK44N80P
Mfr. #:
IXFK44N80P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 44 Amps 800V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK44N80P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFK44N80P DatasheetIXFK44N80P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFK44N80P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-264-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
800 V
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
190 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1200 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
26.16 mm
Länge:
19.96 mm
Serie:
IXFK44N80
Transistortyp:
1 N-Channel
Breite:
5.13 mm
Marke:
IXYS
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
22 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
75 ns
Typische Einschaltverzögerungszeit:
28 ns
Gewichtseinheit:
0.352740 oz
Tags
IXFK44N8, IXFK44, IXFK4, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 800 Vds 190 mOhm 1040 W Power Mosfet - TO-264
***ical
Trans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
***p One Stop Global
Trans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264
*** Source Electronics
PolarHV HiPerFET Power MOSFET
***i-Key
MOSFET N-CH 800V 44A TO-264
***ukat
N-Ch 800V 44A 1200W 0,19R TO264AA
***ark
Mosfet, N, To-264; Transistor Polarity:n Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.19Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.2Kw Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.2kW; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017); Capacitance Ciss Typ:12000pF; Current Id Max:44A; Junction to Case Thermal Resistance A:0.12°C/W; N-channel Gate Charge:198nC; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Reverse Recovery Time trr Max:250ns; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-264; Polarità Transistor:Canale N; Corrente Continua di Drain Id:44A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.19ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.2kW; Modello Case Transistor:TO-264; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017); Capacità Ciss Tipica:12000pF; Carica Gate Canale N:198nC; Corrente Id Max:44A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Resistenza Termica A da Giunzione a Case:0.12°C/W; Temperatura di Esercizio Min:-55°C; Tempo di Recupero Inverso trr Max:250ns; Tensione Vds Tipica:800V; Tensione Vgs Max:30V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Foro Passante
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Teil # Mfg. Beschreibung Aktie Preis
IXFK44N80P
DISTI # V99:2348_15876408		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		24
  • 100:$11.8520
  • 25:$12.8890
  • 1:$15.3050
IXFK44N80P
DISTI # V36:1790_15876408		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		0
  • 25000:$8.1420
  • 12500:$8.1500
  • 2500:$9.7470
  • 250:$13.4600
  • 25:$14.1400
IXFK44N80P
DISTI # IXFK44N80P-ND		IXYS CorporationMOSFET N-CH 800V 44A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube		945In Stock
  • 500:$10.1355
  • 100:$11.8830
  • 25:$12.9316
  • 10:$13.9800
  • 1:$15.3800
IXFK44N80P
DISTI # 32436163		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		24
  • 1:$15.3050
IXFK44N80P
DISTI # 32037959		IXYS CorporationTrans MOSFET N-CH 800V 44A 3-Pin(3+Tab) TO-264AA
RoHS: Compliant		24
  • 2:$9.3257
IXFK44N80P
DISTI # 58M7611		IXYS CorporationMOSFET, N, TO-264,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:1.2kW RoHS Compliant: Yes2
  • 500:$11.2100
  • 250:$11.6000
  • 100:$12.0000
  • 50:$12.5200
  • 25:$13.0600
  • 10:$14.2900
  • 1:$15.5300
IXFK44N80P
DISTI # 747-IXFK44N80P		IXYS CorporationMOSFET 44 Amps 800V
RoHS: Compliant		227
  • 1:$15.3800
  • 10:$14.1500
  • 25:$12.9300
  • 50:$12.4000
  • 100:$11.8800
  • 250:$11.4900
  • 500:$11.1000
IXFK44N80P
DISTI # IXFK44N80P		IXYS CorporationN-Ch 800V 44A 1200W 0,19R TO264AA
RoHS: Compliant		49
  • 1:€13.7000
  • 5:€10.7000
  • 25:€9.6000
  • 50:€9.2500
IXFK44N80P
DISTI # 1427311		IXYS CorporationMOSFET, N, TO-2640
  • 100:£9.5400
  • 50:£10.1300
  • 10:£10.3600
  • 5:£12.3400
  • 1:£12.7700
IXFK44N80P
DISTI # 1427311		IXYS CorporationMOSFET, N, TO-264
RoHS: Compliant		0
  • 100:$17.9100
  • 25:$19.4900
  • 10:$21.0700
  • 1:$23.1800
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Verfügbarkeit
Aktie:
185
Auf Bestellung:
2168
Menge eingeben:
Der aktuelle Preis von IXFK44N80P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
15,38 $
15,38 $
10
14,15 $
141,50 $
25
12,93 $
323,25 $
50
12,40 $
620,00 $
100
11,88 $
1 188,00 $
250
11,49 $
2 872,50 $
500
11,10 $
5 550,00 $
1000
10,14 $
10 140,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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