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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| SSR2N60BTM DISTI # SSR2N60BTM | ON Semiconductor | - Bulk (Alt: SSR2N60BTM) RoHS: Not Compliant Min Qty: 1924 Container: Bulk | Americas - 0 |
|
| SSR2N60BTM DISTI # 512-SSR2N60BTM | ON Semiconductor | MOSFET N-Ch/600V/1.8a/5Ohm RoHS: Compliant | 0 | |
| SSR2N60BTM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant | 726 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: SSR2N50 OMO.#: OMO-SSR2N50-1190 |
Neu und Original |
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Mfr.#: SSR2N60A--252 OMO.#: OMO-SSR2N60A--252-1190 |
Neu und Original |
|
|
Mfr.#: SSR2N60ATM OMO.#: OMO-SSR2N60ATM-1190 |
Neu und Original |
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|
Mfr.#: SSR2N60B OMO.#: OMO-SSR2N60B-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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Mfr.#: SSR2N60B-NL OMO.#: OMO-SSR2N60B-NL-1190 |
Neu und Original |
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Mfr.#: SSR2N60BTF OMO.#: OMO-SSR2N60BTF-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
|
|
Mfr.#: SSR2N60BTM OMO.#: OMO-SSR2N60BTM-1190 |
- Bulk (Alt: SSR2N60BTM) |
|
|
Mfr.#: SSR2N60MTM OMO.#: OMO-SSR2N60MTM-1190 |
Neu und Original |
|
|
Mfr.#: SSR2N60TF OMO.#: OMO-SSR2N60TF-1190 |
Neu und Original |
|
|
Mfr.#: SSR2N80A OMO.#: OMO-SSR2N80A-1190 |
Neu und Original |
