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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| 2SJ244JYTR-E | Renesas Electronics Corporation | Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4871 |
|
| 2SJ244JY | Hitachi Ltd | 2 A, 12 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET | 76 |
|
| 2SJ244JY | Hitachi Ltd | 2 A, 12 V, 0.9 ohm, P-CHANNEL, Si, POWER, MOSFET | 3200 |
|
| 2SJ244JYTR | Hitachi Ltd | 2SJ244JYTR (Also Known As: 2SJ244JY) | 40095 |
|
| 2SJ244JYTR | Hitachi Ltd | 2SJ244JYTR | 40095 |
|
| 2SJ244JY | Toshiba Corporation | 2856 | ||
| 2SJ244JY | Hitachi Ltd | 4000 |
| |
| 2SJ244JYTR | Unknown | 1000 | ||
| 2SJ244JYTL | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 1591 | |
| 2SJ244JYTR | INSTOCK | 200 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: 2SJ241 OMO.#: OMO-2SJ241-1190 |
POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 60V, 0.09OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: 2SJ241 J241 OMO.#: OMO-2SJ241-J241-1190 |
Neu und Original |
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Mfr.#: 2SJ244 OMO.#: OMO-2SJ244-1190 |
Neu und Original |
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Mfr.#: 2SJ244JY TR OMO.#: OMO-2SJ244JY-TR-1190 |
Neu und Original |
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Mfr.#: 2SJ244JYTL OMO.#: OMO-2SJ244JYTL-1190 |
Power Field-Effect Transistor, 2A I(D), 12V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: 2SJ244JYTR-E OMO.#: OMO-2SJ244JYTR-E-1190 |
Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: 2SJ245 OMO.#: OMO-2SJ245-1190 |
Neu und Original |
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Mfr.#: 2SJ245L-E OMO.#: OMO-2SJ245L-E-1190 |
Neu und Original |
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Mfr.#: 2SJ246 J246 OMO.#: OMO-2SJ246-J246-1190 |
Neu und Original |
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Mfr.#: 2SJ248 OMO.#: OMO-2SJ248-1190 |
Neu und Original |