SI1411DH-T1-E3

Mfr. #:: SI1411DH-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 78-SI1411DH-T1-GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI1411DH-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI1411DH-T1-E3 Datasheet SI1411DH-T1-E3 Datasheet (P4-P6)SI1411DH-T1-E3 Datasheet (P7-P9)SI1411DH-T1-E3 Datasheet (P10-P11)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI1

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Teil # Aliase:: SI1411DH-E3

Gewichtseinheit:: 0.000988 oz

Tags: SI1411DH-T1, SI1411D, SI1411, SI141, SI14, SI1

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI1411DH-T1-E3 Beschreibung

***mal: P-Ch MOSFET SC-70-6 (SOT-363) 150V 2.6ohms @ 10V

***ark: Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-520mA; Drain Source Voltage, Vds:-150V; On Resistance, Rds(on):2.7ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4.5V; Power Dissipation, Pd:1W ;RoHS Compliant: Yes

***nell: MOSFET, P CH, -150V, -0.42A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-420mA; Drain Source Voltage Vds:-150V; On Resistance Rds(on):2.14ohm; Rds(on) Test Voltage Vgs:-6V; Power Dissipation Pd:1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI1411DH-T1-E3 DISTI # SI1411DH-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 150V 0.42A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI1411DH-T1-E3 DISTI # SI1411DH-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 150V 0.42A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI1411DH-T1-E3 DISTI # SI1411DH-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 150V 0.42A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI1411DH-T1-E3 DISTI # 781-SI1411DH-T1-E3	Vishay Intertechnologies	MOSFET -150V Vds 20V Vgs SC70-6 RoHS: Compliant	0
SI1411DH-T1-E3 DISTI # 2335278	Vishay Intertechnologies	MOSFET, P CH, -150V, -0.42A, SOT-363 RoHS: Compliant	76	5:£0.6580 25:£0.5690 100:£0.4670 250:£0.4370 500:£0.4020
SI1411DH-T1-E3 DISTI # 2335278	Vishay Intertechnologies	MOSFET, P CH, -150V, -0.42A, SOT-363 RoHS: Compliant	0	1:$1.4500 10:$1.1700 100:$0.9270 250:$0.8040 500:$0.6950 1000:$0.6460 3000:$0.6240 9000:$0.6030

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SI1411DH-T1-GE3 OMO.#: OMO-SI1411DH-T1-GE3	MOSFET -150V Vds 20V Vgs SC70-6
	Mfr.#: SI1411DH-T1-E3 OMO.#: OMO-SI1411DH-T1-E3	MOSFET RECOMMENDED ALT 78-SI1411DH-T1-GE3
	Mfr.#: SI1411DH-T1-GE3 OMO.#: OMO-SI1411DH-T1-GE3-VISHAY	MOSFET P-CH 150V 420MA SC70
	Mfr.#: SI1411DH-TH-GE3 OMO.#: OMO-SI1411DH-TH-GE3-1190	Neu und Original
	Mfr.#: SI1411DH-T1-E3 OMO.#: OMO-SI1411DH-T1-E3-VISHAY	IGBT Transistors MOSFET 150V 0.52A 1.56W 2.6 ohms @ 10V
	Mfr.#: SI1411DH-T1-GE3-CUT TAPE OMO.#: OMO-SI1411DH-T1-GE3-CUT-TAPE-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 3500
Menge eingeben:

Der aktuelle Preis von SI1411DH-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI1411DH-T1 3
SI1411D 4
SI1411 5
SI141 40
SI14 148
SI1 1080

Neueste Produkte

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
Compare SI1411DH-T1-E3

SI1411DHT1E3 vs SI1411DHT1GE3 vs SI1411DHT1GE3CUTTAPE
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SI1411DH-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes