IRFPS3810PBF

IRFPS3810PBF
Mfr. #:
IRFPS3810PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 100V SINGLE N-CH 9mOhms 260nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFPS3810PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFPS3810PBF DatasheetIRFPS3810PBF Datasheet (P4-P6)IRFPS3810PBF Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
141 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
260 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
441 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
20.7 mm
Länge:
15.87 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
5.31 mm
Marke:
Infineon-Technologien
Abfallzeit:
140 ns
Produktart:
MOSFET
Anstiegszeit:
270 ns
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
45 ns
Typische Einschaltverzögerungszeit:
24 ns
Teil # Aliase:
SP001566934
Tags
IRFPS381, IRFPS38, IRFPS3, IRFPS, IRFP, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***k
    V***k
    BY

    Delivery 20 days to belarus. To the buyer-40 days. The product corresponds to the description.

    2019-03-27
    M***m
    M***m
    KH

    good conditions

    2019-03-24
    R***n
    R***n
    RU

    Everything is ok.

    2019-03-15
    E**g
    E**g
    RU

    The goods received. See overview on youtube. www *** youtube *** com/channel/ucxwj3ihgupbcduk1utk_oaw/videos (replace three stars by one point)

    2019-06-05
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.009Ohm;ID 170A;Super-247;PD 580W;gFS 52S
***ure Electronics
Single N-Channel 100 V 0.009 Ohm 260 nC HEXFET® Power Mosfet - TO-274AA
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
***ical
Trans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-274AA Tube
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:170A; On Resistance Rds(On):0.009Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N, 100V, 141A, SUPER 247; Transistor Polarity:N Channel; Continuous Drain Current Id:141A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:441W; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction to Case Thermal Resistance A:0.34°C/W; On State resistance @ Vgs = 10V:9ohm; Package / Case:Super-247; Power Dissipation Pd:441W; Power Dissipation Pd:441W; Pulse Current Idm:230A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFPS3810PBF
DISTI # V36:1790_13892989
Infineon Technologies AGTrans MOSFET N-CH Si 100V 170A 3-Pin(3+Tab) TO-274AA Tube2773
  • 1000:$3.6900
  • 500:$3.8140
  • 250:$4.2379
  • 100:$4.4060
  • 25:$5.1890
  • 10:$5.7660
  • 1:$6.4060
IRFPS3810PBF
DISTI # IRFPS3810PBF-ND
Infineon Technologies AGMOSFET N-CH 100V 170A SUPER247
RoHS: Compliant
Min Qty: 1
Container: Bag
5157In Stock
  • 500:$6.8862
  • 100:$8.2190
  • 10:$9.9960
  • 1:$11.1100
IRFPS3810PBF
DISTI # 29754110
Infineon Technologies AGTrans MOSFET N-CH Si 100V 170A 3-Pin(3+Tab) TO-274AA Tube5810
  • 100:$4.4064
  • 10:$5.3664
IRFPS3810PBF
DISTI # 30663874
Infineon Technologies AGTrans MOSFET N-CH Si 100V 170A 3-Pin(3+Tab) TO-274AA Tube2773
  • 500:$3.8140
  • 250:$4.2379
  • 100:$4.4060
  • 25:$5.1890
  • 10:$5.7660
  • 2:$6.4060
IRFPS3810PBF
DISTI # IRFPS3810PBF
Infineon Technologies AGTrans MOSFET N-CH 100V 170A 3-Pin(3+Tab) TO-274AA - Rail/Tube (Alt: IRFPS3810PBF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 5645
  • 1:$5.6900
  • 10:$5.5900
  • 25:$5.5900
  • 50:$5.5900
  • 100:$4.5900
  • 500:$4.5900
  • 1000:$4.5900
IRFPS3810PBF.
DISTI # 32AC0705
Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:170A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.009ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:441W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$5.7900
  • 10:$5.6900
  • 100:$5.6900
  • 500:$5.6900
IRFPS3810PBF
DISTI # 70017490
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.009Ohm,ID 170A,Super-247,PD 580W,gFS 52S
RoHS: Compliant
0
  • 1:$6.9600
  • 10:$6.6100
  • 20:$6.2800
  • 40:$5.9700
IRFPS3810PBF
DISTI # 942-IRFPS3810PBF
Infineon Technologies AGMOSFET 100V SINGLE N-CH 9mOhms 260nC
RoHS: Compliant
5611
  • 1:$9.6100
  • 10:$8.6900
  • 25:$8.2800
  • 100:$7.1900
  • 250:$6.8700
  • 500:$6.2600
  • 1000:$5.4600
IRFPS3810PBFInternational Rectifier 
RoHS: Not Compliant
975
  • 1000:$3.6700
  • 500:$3.8600
  • 100:$4.0200
  • 25:$4.2000
  • 1:$4.5200
IRFPS3810PBFInternational Rectifier 
RoHS: Compliant
Europe - 1550
    IRFPS3810PBF
    DISTI # C1S322000579800
    Infineon Technologies AGTrans MOSFET N-CH Si 100V 170A 3-Pin(3+Tab) TO-274AA Tube
    RoHS: Compliant
    2773
    • 250:$4.2379
    • 100:$4.4060
    • 25:$5.1890
    Bild Teil # Beschreibung
    AMC1301DWVR

    Mfr.#: AMC1301DWVR

    OMO.#: OMO-AMC1301DWVR

    Isolation Amplifiers +/-250-mV Input 3-us Delay
    BSC0504NSIATMA1

    Mfr.#: BSC0504NSIATMA1

    OMO.#: OMO-BSC0504NSIATMA1

    MOSFET LV POWER MOS
    C3D10170H

    Mfr.#: C3D10170H

    OMO.#: OMO-C3D10170H

    Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1700V, 10A
    DLW5BTH142TQ2L

    Mfr.#: DLW5BTH142TQ2L

    OMO.#: OMO-DLW5BTH142TQ2L

    Common Mode Chokes / Filters 1400ohms 1.5A 50VDC AECQ200 Pwrtrain/Saf
    ECW1D-B24-BC0024L

    Mfr.#: ECW1D-B24-BC0024L

    OMO.#: OMO-ECW1D-B24-BC0024L

    Encoders 9mm Inserted Slot
    311-43-164-41-001000

    Mfr.#: 311-43-164-41-001000

    OMO.#: OMO-311-43-164-41-001000

    IC & Component Sockets 64 POS STRAIGHT .1"
    1025HC25-RTR

    Mfr.#: 1025HC25-RTR

    OMO.#: OMO-1025HC25-RTR

    Surface Mount Fuses 25A Fast-acting SMT ceramic fuses
    AMC1301DWVR

    Mfr.#: AMC1301DWVR

    OMO.#: OMO-AMC1301DWVR-TEXAS-INSTRUMENTS

    Isolation Amplifiers +/-250-mV Input 3-us Delay
    OP77FZ

    Mfr.#: OP77FZ

    OMO.#: OMO-OP77FZ-ANALOG-DEVICES

    Precision Amplifiers LOW OFFSET VTG IC
    ECW1D-B24-BC0024L

    Mfr.#: ECW1D-B24-BC0024L

    OMO.#: OMO-ECW1D-B24-BC0024L-BOURNS

    Encoders 9mm Inserted Slot
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1988
    Menge eingeben:
    Der aktuelle Preis von IRFPS3810PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    8,77 $
    8,77 $
    10
    7,92 $
    79,20 $
    25
    7,56 $
    189,00 $
    100
    6,56 $
    656,00 $
    250
    6,27 $
    1 567,50 $
    500
    5,71 $
    2 855,00 $
    1000
    4,97 $
    4 970,00 $
    2500
    4,79 $
    11 975,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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