OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXYN100N120B3H1

IXYN100N120B3H1
Mfr. #:
IXYN100N120B3H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors DISC IGBT XPT-GENX3 SOT-227UI(
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXYN100N120B3H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXYN100N120B3H1 DatasheetIXYN100N120B3H1 Datasheet (P4-P6)IXYN100N120B3H1 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Serie:
Planar
Verpackung:
Rohr
Marke:
IXYS
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
10
Unterkategorie:
IGBTs
Handelsname:
XPT, GenX3
Gewichtseinheit:
1.058219 oz
Tags
IXYN100N1, IXYN10, IXYN1, IXYN, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, IXYS IXYN100N120B3H1 IGBT, 165 A 1200 V, 4-Pin SOT-227B
***i-Key
IGBT XPT 1200V 152A SOT-227B
***ark
Igbt, N-Ch, 1.2Kv, 165A, Sot-227B; Transistor Polarity:n Channel; Dc Collector Current:165A; Collector Emitter Saturation Voltage Vce(On):2.6V; Power Dissipation Pd:690W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, N-CH, 1.2KV, 165A, SOT-227B; Transistor Polarity:N Channel; DC Collector Current:165A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:690W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SOT-227B; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:XPT GenX3 Series; SVHC:No SVHC (12-Jan-2017)
***nell
IGBT, CA-N, 1,2KV, 165A, SOT-227B; Polarità Transistor:Canale N; Corrente di Collettore CC:165A; Tensione Saturaz Collettore-Emettitore Vce(on):2.6V; Dissipazione di Potenza Pd:690W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:SOT-227B; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:XPT GenX3 Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Teil # Mfg. Beschreibung Aktie Preis
IXYN100N120B3H1
DISTI # V36:1790_15877681		IXYS Corporation1200V XPTTM IGBTGenX3TM w/ Diode
RoHS: Compliant		0
  • 10000:$17.8000
  • 5000:$17.8100
  • 1000:$19.2900
  • 100:$22.7000
  • 10:$23.3200
IXYN100N120B3H1
DISTI # IXYN100N120B3H1-ND		IXYS CorporationIGBT XPT 1200V 152A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube		Temporarily Out of Stock
  • 10:$29.6810
IXYN100N120B3H1
DISTI # 747-IXYN100N120B3H1		IXYS CorporationIGBT Transistors
RoHS: Compliant		26
  • 1:$30.5600
  • 5:$29.0300
  • 10:$28.2700
  • 25:$25.9800
  • 50:$25.3500
  • 100:$24.1400
  • 200:$22.1600
IXYN100N120B3H1
DISTI # 8047606		IXYS CorporationIGBT 1200V 76A XPT GENX3 W/DIODE SOT227B, EA15
  • 30:£17.9800
  • 10:£18.3500
  • 5:£19.0100
  • 2:£19.9000
  • 1:£22.1100
IXYN100N120B3H1
DISTI # 2674800		IXYS CorporationIGBT, N-CH, 1.2KV, 165A, SOT-227B
RoHS: Compliant		0
  • 500:$34.2200
  • 250:$35.2800
  • 100:$36.5400
  • 10:$38.6100
  • 1:$39.3500
IXYN100N120B3H1
DISTI # 2674800		IXYS CorporationIGBT, N-CH, 1.2KV, 165A, SOT-227B
RoHS: Compliant		0
  • 100:£16.9100
  • 50:£19.3400
  • 10:£19.8200
  • 5:£22.1500
  • 1:£23.3200
Bild Teil # Beschreibung
ATECC508A-MAHDA-T

Mfr.#: ATECC508A-MAHDA-T

OMO.#: OMO-ATECC508A-MAHDA-T

 Security ICs / Authentication ICs ECDH/ECC 10Kb 8ld UDFN I2C, T&R
ISO224ADWV

Mfr.#: ISO224ADWV

OMO.#: OMO-ISO224ADWV

 Isolation Amplifiers REINFORCED ISOLATED AMPLIFIER
TLV9004IRTER

Mfr.#: TLV9004IRTER

OMO.#: OMO-TLV9004IRTER

 Operational Amplifiers - Op Amps QUAD CHANNEL AMP
TCA9803DGKR

Mfr.#: TCA9803DGKR

OMO.#: OMO-TCA9803DGKR

 Interface - Signal Buffers, Repeaters I2C INTERFACE
STB45N50DM2AG

Mfr.#: STB45N50DM2AG

OMO.#: OMO-STB45N50DM2AG

 MOSFET Automotive-grade N-channel 500 V, 0.07 Ohm typ., 35 A MDmesh DM2 Power MOSFET in a D2PAK package
SW280708-1

Mfr.#: SW280708-1

OMO.#: OMO-SW280708-1-1190

 WATERPROOF DYNAMIC SPEAKER
STB45N50DM2AG

Mfr.#: STB45N50DM2AG

OMO.#: OMO-STB45N50DM2AG-STMICROELECTRONICS

 MOSFET N-CH 500V 35A
ISO224ADWV

Mfr.#: ISO224ADWV

OMO.#: OMO-ISO224ADWV-TEXAS-INSTRUMENTS

 INTERFACE IC MISC
ATECC508A-MAHDA-T

Mfr.#: ATECC508A-MAHDA-T

OMO.#: OMO-ATECC508A-MAHDA-T-MICROCHIP-TECHNOLOGY

 IC AUTHENTICATION CHIP 8UDFN
TCA9803DGKR

Mfr.#: TCA9803DGKR

OMO.#: OMO-TCA9803DGKR-TEXAS-INSTRUMENTS

 IC TRNSLTR BIDIRECTIONAL 8VSSOP
Verfügbarkeit
Aktie:
26
Auf Bestellung:
2009
Menge eingeben:
Der aktuelle Preis von IXYN100N120B3H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
30,56 $
30,56 $
5
29,03 $
145,15 $
10
28,27 $
282,70 $
25
25,98 $
649,50 $
50
25,35 $
1 267,50 $
100
24,14 $
2 414,00 $
200
22,16 $
4 432,00 $
500
21,09 $
10 545,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top